Improved reading non-volatile semiconductor memory device

Claim 2

A non-volatile semiconductor memory device as set forth in claim 1, wherein each of said plurality of non-volatile memory cells comprises a multi-level type memory cell for storing ternary state values.

Claim 3

A non-volatile semiconductor memory device as set forth in claim 1, wherein said plurality of reference cells are provided for every predetermined number of non-volatile memory cells.

Claim 4

A non-volatile semiconductor memory device as set forth in claim 1, wherein the writing of the data to said plurality of reference cells is carried out at almost the same time as the writing of data into the predetermined number of non-volatile memory cells.

Claim 5

A non-volatile semiconductor memory device as set forth in claim 1, wherein said plurality of reference cells and said predetermined number of non-volatile memory cell are connected to the same word lines.

Claim 6

A non-volatile semiconductor memory device as set forth in claim 2, wherein each of said non-volatile memory cells is constituted by a non-volatile semiconductor memory element with which enables an increase/decrease of the amount of storage of the charges or an inversion of polarity is possible, and wherein each of said reference cells constitutes said the multi-level storage memory cell.

Claim 7

A non-volatile semiconductor memory device as set forth in claim 6, wherein said non-volatile memory cell and said reference cell are either of a transistor having a floating gate which can store charges, a transistor having a charge trapping function, and a transistor having a strong dielectric film.

Claim 8

A non-volatile semiconductor memory device as set forth in claim 1, wherein said reference current generation circuit comprises an adder circuit which selects at least two among the output lines of said plurality of reference cells and adds the current values flowing through the output lines and a transistor which receives the current of the added value of said adder circuit and which has, as a predetermined ratio, a relationship of the values of the channel width divided by the channel length so as to generate a current or k-multiple current of the same, of a plurality of current values which are added.

Claim 9

A non-volatile semiconductor memory device as set forth in claim 8, wherein said adder circuit performs simple addition on the at least two current values which are selected.

Claim 10

A non-volatile semiconductor memory device as set forth in claim 8, wherein said adder circuit performs weighted addition on the at least two current values which are selected.

Claim 11

A non-volatile semiconductor memory device as set forth in any one of claim 1, wherein said reference current generation circuit and said decision circuit are integrally formed and a transistor constituting a part of said reference current generation circuit acts also as the transistor of a part of a differential amplifier constituting said decision circuit.

Claim 12

A non-volatile semiconductor memory device as set forth in claim 8, comprising: a first current-to-voltage conversion transistor which converts an output current of said adder circuit to a voltage; a first transistor for a differential amplifier to which the output line of said first current-to-voltage conversion transistor is connected, which constitutes the transistor of a part of a differential amplifier; a second current-to-voltage conversion transistor which converts a signal current of the output line of said non-volatile memory cell to a voltage; and a second transistor for the differential amplifier to which the output line of said second current-to-voltage conversion transistor is connected, which constitutes the transistor of a part of the differential amplifier, wherein, these first current-to-voltage conversion transistor, second current-to-voltage conversion transistor, first transistor for differential amplifier, and second transistor for differential amplifier, have as predetermined ratios, relationships of values of the channel widths divided by the channel lengths.

Claim 13

non-volatile semiconductor memory device as set forth in claim 12, further comprising a transistor for stabilizing a voltage conversion operation of said first current-to-voltage conversion transistor and second current-to-voltage conversion transistor and, for setting an initial state of the differential amplifier is added.