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EP0721019A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Low temperature deposition of silicon dioxide using organosilanes

Assignee: Air Products and Chemicals Inc
•
Filing: 1996-01-02
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Granted: —
•
Expires: 2016-01-02
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Abstract

Abstract The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of a) heating a substrate upon which silicon dioxide is to be deposited to a temperature in the range of approximately 150 to 500°C in a vacuum maintained at a pressure in the range of approximately 50 to 750mTorr; b) introducing into said vacuum an organosilane containing feed and an oxygen containing feed, said organosilane containing feed consisting essentially of one or more compounds having the general formula: wherein R 1 and R 2 are independently H, alkyl, alkenyl, alkynyl, or aryl, having C 1 to C 6 , but only one of R 1 and R 2 can be H, or R 1 and R 2 can be connected by an alkyl chain Cx(R 3 ) 2 , where R 3 is independently H, C x H 2x+1 and x = 1-6, and R 4 is independently H, C y H 2y+1 where y = 1-6; and c) maintaining said temperature and vacuum thereby causing a thin film of silicon dioxide to deposit on the substrate.

Inventors

  • 👤 Ravi K. Laxman
  • 👤 Arthur K. Hochberg

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 21:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/66; H10P14/668; H10P14/6681; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 184 words
A process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of a) heating a substrate upon which silicon dioxide is to be deposited to a temperature in the range of approximately 150 to 500°C in a vacuum maintained at a pressure in the range of approximately 50 to 750mTorr; b) introducing into said vacuum an organosilane containing feed and an oxygen containing feed, said organosilane containing feed consisting essentially of one or more compounds having the general formula: wherein R 1 and R 2 are independently H, alkyl, alkenyl, alkynyl, or aryl, having C 1 to C 6 , but only one of R 1 and R 2 can be H, or R 1 and R 2 can be connected by an alkyl chain C x (R 3 ) 2 , where R 3 is independently H, C x H 2x+1 and x = 1-6, and R 4 is independently H, C y H 2y+1 where y = 1-6; and c) maintaining said temperature and vacuum thereby causing a thin film of silicon dioxide to deposit on the substrate.
Claim 2
Dependent Claim 29 words
A process according to Claim 1 wherein the said oxygen containing feed is selected from the group consisting of oxygen gas, N 2 O, O 3 and mixtures thereof.
Claim 3
Dependent Claim 21 words
A process according to Claim 1 wherein an oxygen containing feed to organosilane containing feed ratio is between 0.5:1 and 10:1.
Claim 4
Dependent Claim 13 words
A process according to Claim 1 wherein said substrate is a silicon wafer.
Claim 5
Dependent Claim 12 words
A process according to Claim 1 wherein said organosilane is 1,2 bis(methylsilyl)ethane.
Claim 6
Dependent Claim 13 words
A process according to Claim 1 wherein said organosilane is 1-methylsilyl, 2-silyl ethane.
Claim 7
Dependent Claim 60 words
A process according to Claim 1 wherein R 1 and R 2 are independently alkyl, alkenyl, alkynyl, or aryl, having C 1 to C 6 , or R 1 and R 2 can be connected by an alkyl chain C x (R 3 ) 2 , where R 3 is independently H, C x H 2x+1 and x = 1-6.
Claim 8
Dependent Claim 88 words
A process for low temperature chemical vapor deposition of silicon dioxide, comprising the steps of: a) heating a substrate upon which silicon dioxide is to be deposited to a temperature in the range of approximately 150 to 500°C in a vacuum maintained at a pressure in the range of approximately 50 to 750mTorr; b) introducing into the vacuum a 1,2 bis(methylsilyl)ethane containing feed and an oxygen containing feed; and c) maintaining the temperature and vacuum thereby causing a thin film of silicon dioxide to deposit on the substrate.

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