Patent EP0717437A2 successfully refreshed from Google Patents.
EP0717437A2
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EP
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Method of forming buried oxide layers
Assignee: Advanced Micro Devices Inc
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Filing: 1995-11-29
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Granted: —
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Expires: 2015-11-29
Abstract
Abstract A method of manufacturing a wafer having a buried oxide layer at a desired depth is disclosed. The method includes the steps of implanting a standard species ion at an energy at or above 1 MeV into an oxygen-rich wafer to form a defect region at the desired depth in the oxygen rich wafer. The wafer is annealed such that oxygen in the wafer is gettered to the defect region to form the buried oxide layer.
Inventors
- 👤 John K. Lowell
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 07:53
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
71 words
A method of manufacturing a wafer having a buried oxide layer at a desired depth, comprising the steps of: implanting an ion into at least a portion of an oxygen-rich wafer to form a defect region at the desired depth in the oxygen rich wafer at an energy level at or above 1 MeV; and annealing the oxygen-rich wafer such that oxygen in the wafer is gettered to the defect region.
Claim 2
Dependent Claim
12 words
A method as recited in claim 1, wherein the ion is phosphorous.
Claim 3
Dependent Claim
31 words
A method as recited in claim 2, wherein the ion is implanted in the implanting step at a dose between approximately 4.5x10 14 /cm 2 and 1x10 15 /cm 2 .
Claim 4
Dependent Claim
11 words
A SOI wafer manufactured according to the method of claim 1.
Claim 5
Dependent Claim
28 words
A method as recited in claim 1, further comprising the step of forming an oxide layer on a surface of the oxygen-rich wafer prior to the implanting step.
Claim 6
Dependent Claim
22 words
A method as recited in claim 1, wherein the annealing step is carried out at approximately 960° and for approximately 30 minutes.
Claim 7
Dependent Claim
23 words
A method as recited in claim 1 wherein a background oxygen level of the oxygen-rich wafer is approximately 1x10 18 cm 3 .
References Cited (Backward Citations)
No citation records indexed.
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