Patent US875332A successfully refreshed from Google Patents.
Patent EP0706202A2 successfully refreshed from Google Patents.
EP0706202A2
Expired / Lapsed
EP
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Method for producing a pattern and a semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-03-19
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Granted: —
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Expires: 2011-03-19
Abstract
Abstract A particle beam implantation into a spin-on-glass resin has an effect in hardening the resin of the implanted region. The non-implanted part is not hardened. Therefore, the non-hardened resin of the non-implanted part can be removed with a high selectivity relative to the hardened resin of the implanted part and an inverted pattern comprising hardened resin is produced. The spin-on-glass resin is a silicon compound including a Si-O-CH₃ radical and is convertible upon heating to CH₃, H₂O, and SiO₂
Inventors
- 👤 Tomoki c/o Mitsubishi Denki K.K. Optelec. & Oku
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 14:28
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/015; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; H10P; H10P30/00; H10P30/20; H10P30/22; H10P76/00; H10P76/20; H10P76/204; H10P76/2049; H10P95/00; H10P95/08
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
119 words
A method for producing a semiconductor device comprising the following steps: plating a spin-on-glass resin (3) over the surface of a semiconductor substrate (1); thereafter, implanting ions or neutral particles into a selected area of said spin-on-glass resin (3) thereby to harden said spin-on-glass resin selectively; and thereafter, removing remainder spin-on-glass resin (3) to produce a patterned mask (3a); which method is characterised in that: said spin-on-glass resin is a silicon compound including a Si-0-CH₃ radical and is convertible upon heating to CH₃, H₂0 and Si0₂; and the selected area of said spin-on-glass resin (3) is converted to a SiO₂ thin film (3a) by performing the step of implanting said ions or neutral particles into the selected area thereof.
Claim 2
Dependent Claim
49 words
A method as claimed in claim 1 wherein ions, which are to be donors, acceptors or deep levels in said semiconductor substrate (1), are, during the step of implanting as aforesaid, implanted at an energy sufficient so that they reach into and are implanted in said semiconductor substrate (1).
Claim 3
Dependent Claim
23 words
A method as claimed in claim 2 wherein said spin-on-glass resin (3) is plated directly onto the surface of said semiconductor substrate (1).
Claim 4
Dependent Claim
30 words
A method as claimed in claim 2 wherein said spin-on-glass resin (3) is spaced from the surface of said semiconductor substrate (1) by a layer (2) of silicon nitride (SiN).
Claim 5
Dependent Claim
88 words
A method as claimed in claim 2 wherein said spin-on-glass resin (3) is plated on a semiconductor substrate (1) having an insulating film (2) at its surface; a photoresist pattern (4) is produced on said spin-on-glass resin (3), is used as a mask during the step of implanting said ions, and is removed; and after the step of removing said remainder of spin-on-glass resin (3), a part of said insulating film (2), i.e. that part which is left exposed by said patterned mask (3a), is removed by etching.
Claim 6
Dependent Claim
146 words
A method as claimed in claim 1 wherein: said spin-on-glass resin (3) is plated on a semiconductor substrate (1) having an insulating film (2) at its surface, a photoresist pattern (4) is produced on said spin-on-glass resin (3), and is used as a mask during the step of implanting said ions or neutral particles as aforesaid; after the step of implanting ions or neutral particles, ions which are to be donors, acceptors of deep levels in said semiconductor substrate (1) are implanted at an energy sufficient to reach into and implant a region of said semiconductor substrate (1) self-aligned with said photoresist pattern (4); said photoresist pattern (4) is removed thereafter, and after the step of removing said remainder of spin-on-glass resin (3), a part of said insulating film (2), ie that part which is left exposed by said patterned mask (3a), is removed by etching.
Claim 7
Independent Claim
85 words
A method as claimed in either of claims 5 or 6 wherein source and drain regions (6a) of an active region of said semiconductor substrate (1) are defined by said implanting of the ions which are to be donors or acceptors; and after the removal of said remainder spin-on-glass resin (3), a Schottky metal is deposited and a gate contact (10) is defined, areas of said source and said drain are exposed, an ohmic metal is deposited, and source and drain contacts (17) are defined.
Claim 8
Dependent Claim
242 words
A method as claimed in claim 1 wherein said spin-on-glass resin (3) is plated over the surface of a compound semiconductor substrate (1, 12, 13, 14) a photoresist pattern (4) is produced on said spin-on-glass resin (3), this photoresist pattern covering regions of said spin-on-glass resin (3) which are located over regions of said compound semiconductor substrate (1, 12, 13, 14) which are to be formed as gate, source and drain regions thereof, which photoresist pattern (4) is used as a mask during the step of implanting ions or neutral particles as aforesaid, and is then removed, a second photoresist pattern (15) is produced on said spin-on-glass resin (3) thereafter and that portion of said spin-on-glass resin (3) over the gate region of said compound semiconductor substrate (1, 12, 13, 14) is removed by etching, and the spin-on-glass resin (3a, 3b) previously hardened by implantation is used then as a mask while a recess is etched in the compound semiconductor substrate (1, 12, 13, 14); said second photoresist pattern (15) is removed; a Schottky metal is plated in said recess and over said spin-on-glass resin (3), and is patterned to produce a Schottky metal contact (10); spin-on-glass resin (3) located over said source and drain regions of said compound semiconductor substrate (1, 12, 13, 14) is removed and said source and drain regions are exposed; and ohmic metal is plated and ohmic contacts (17) to the source and drain regions are produced.
References Cited (Backward Citations)
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