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Process of manufacturing a structure having a thin semiconductor layer on a substrate

Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1995-09-20
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Granted: —
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Expires: 2015-09-20
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Abstract

Abstract Translated from French Procédé de fabrication d'une structure comportant une couche mince (4) semi-conductrice adhérente sur un substrat cible (24) . Le procédé comporte les étapes suivantes : a) - fabrication d'une première structure comportant une couche mince (4) semi-conductrice sur un premier substrat, b) - transfert de la couche mince (4) du premier substrat sur le substrat (24) dit substrat cible. Method for manufacturing a structure comprising a thin semiconductor layer (4) adhering to a target substrate (24). The process includes the following steps: a) - manufacturing a first structure comprising a thin semiconductor layer (4) on a first substrate, b) - transfer of the thin layer (4) from the first substrate to the substrate (24) called the target substrate. Application à la fabrication de composants électroniques. Application to the manufacture of electronic components.

Inventors

  • 👤 Michel Bruel
  • 👤 Thierry Poumeyrol

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 23:14
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10P54/00; H10P54/50; H10P54/52; H10W; H10W10/00; H10W10/10; H10W10/181

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

WO1981002948A1 Cited
EP0355913A1 Cited
EP0504714A2 Cited
US5110748A Cited
FR2681472A1 Cited
EP0533551A1 Cited
EP0665588A1 Cited

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