Patent EP0692825A2 successfully refreshed from Google Patents.
EP0692825A2
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EP
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Analogue MISFET with threshold voltage adjuster
Assignee: Sony Corp
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Filing: 1995-07-13
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Granted: —
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Expires: 2015-07-13
Abstract
Abstract A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order. The threshold voltage or channel potential of the MIS device can be controlled by an amount of electric charges injected into the nitride film.
Inventors
- 👤 Asao c/o Sony Corporation Hirota
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:07
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/30; H03F1/301; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; G; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/146; H03F3/00; H03F3/34; H03F3/343; H03F3/345; H03K; H03K19/00; H03K19/0021; H03K19/0027; H10D30/00; H10D30/01; H10D30/021; H10D30/60; H10D30/69; H10D84/00; H10D84/891; H10D89/00; H10D89/211; H10D89/213; H10D89/215; H10F; H10F39/00; H10F39/80; H10F39/803; H10F39/8037; H03K2217/00; H03K2217/0018
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
46 words
A metal-insulator-semiconductor (MIS) device comprising: a semiconductor layer; a gate electrode formed on said semiconductor layer; and a gate insulating film formed between said semiconductor layer and said gate electrode, said gate insulating film holding electric charges to adjust a threshold voltage or a channel potential.
Claim 2
Dependent Claim
18 words
A MIS device according to claim 1, wherein said MIS device is an analogue MIS field effect transistor.
Claim 3
Dependent Claim
43 words
A MIS device according to claim 1, wherein said gate insulating film has a multi-layer structure in which an oxide film, a nitride film and an oxide film are laminated, in that order, and said electric charges are injected into said nitride film.
Claim 4
Independent Claim
47 words
A method of adjusting a threshold voltage of a MIS device of a semiconductor integrated circuit composed of a plurality of MIS devices comprising the step of: injecting electric charges into a gate insulating film so as to correct fluctuations of threshold voltages between said MIS devices.
Claim 5
Dependent Claim
31 words
A method of adjusting a threshold voltage of a MIS device according to claim 4, wherein said electric charges are injected into said gate insulating film formed of a nitride film.
Claim 6
Dependent Claim
51 words
A method of adjusting a threshold voltage of a MIS device according to claim 4, wherein said electric charges are injected into a nitride film of said gate insulating film having a multi-layer structure in which an oxide film, a nitride film and an oxide film are laminated, in that order.
Claim 7
Dependent Claim
28 words
A method of adjusting a threshold voltage of a MIS device according to claim 4, further comprising a step for detecting a channel potential of said MIS device.
Claim 8
Dependent Claim
33 words
A method of adjusting a threshold voltage of a MIS device according to claim 7, wherein said channel potential detection step is a step for comparing a channel potential with a reference value.
Claim 9
Dependent Claim
46 words
A method of adjusting a threshold voltage of a MIS device according to claim 4, wherein said electric charge injection process is carried out in a process for applying a voltage to an interface between said gate electrode and a semiconductor substrate of said MIS device.
Claim 10
Independent Claim
52 words
A method of adjusting a channel potential of a MIS device comprising the steps of: comparing a channel potential of a MIS device with a reference value; and injecting electric charges for correcting a difference between said channel potential and said reference value into a gate insulating film of said MIS device.
Claim 11
Dependent Claim
55 words
A bias circuit comprising: a load resistor and a MIS field effect transistor connected in series between first and second potentials, wherein said MIS field effect transistor has a gate insulating film into which electric charges for adjusting a channel potential are injected thereby to adjust a threshold voltage of said MIS field effect transistor.
Claim 12
Independent Claim
63 words
A method of adjusting a bias circuit having a load resistor and a MIS field effect transistor connected in series between first and second potentials comprising the steps of: adjusting a channel potential by injecting electric charges into a gate insulating film of a MIS field effect transistor; and setting said MIS field effect transistor in the enhancement mode after said adjustment process.
Claim 13
Dependent Claim
99 words
A charge transfer device comprising: a charge transfer portion; a floating capacitor for accumulating electric charges transferred by said charge transfer portion; a reset transistor for setting a potential of said floating capacitor to a predetermined potential; and a bias circuit for generating a bias voltage supplied to a control electrode of said reset transistor, wherein said bias circuit includes a load and a MIS field effect transistor connected in series between said first and second potentials and said MIS field effect transistor has a gate insulating film into which electric charges for adjusting a channel potential are injected.
Claim 14
Dependent Claim
87 words
A solid-state imaging device comprising: a plurality of pixels; means for outputting signals obtained from said pixels; means for discharging unnecessary signals of said pixels; and a bias circuit for generating a control voltage to control a discharge operation of said discharge means, wherein said bias circuit includes a load resistor and a MIS field effect transistor connected in series between first and second potentials and said MIS field effect transistor has a gate insulating film into which electric charges for adjusting a channel potential are injected.
Claim 15
Dependent Claim
67 words
A solid-state imaging device according to claim 14, wherein said pixel has a signal charge accumulation portion formed of a first conductivity type semiconductor region and said unnecessary signal discharge means includes a gate portion formed of a second conductivity type semiconductor region adjacent to said signal charge accumulation portion and a drain portion formed of a first conductivity type semiconductor region adjacent to said gate portion.
Claim 16
Dependent Claim
18 words
A solid-state imaging device according to claim 15, wherein said control voltage is supplied to said drain portion.
Claim 17
Dependent Claim
62 words
A charge detecting device comprising: a floating capacitor for accumulating signal charges; a detecting circuit for detecting signal charges accumulated in said floating capacitor; and a MIS field effect transistor for resetting a potential of said floating capacitor to a predetermined potential, said MIS field effect transistor having a gate insulating film into which electric charges of a predetermined amount are injected.
Claim 18
Dependent Claim
34 words
A charge detecting device according to claim 17, wherein said gate insulating film has a multi-layer structure in which an oxide film, a nitride film and an oxide film are laminated, in that order.
References Cited (Backward Citations)
No citation records indexed.
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