Patent EP0685878A2 successfully refreshed from Google Patents.
EP0685878A2
Expired / Lapsed
EP
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Semiconductor package and method of forming the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1995-04-13
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Granted: —
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Expires: 2015-04-13
Abstract
Abstract A semiconductor device includes a board base (50) having through-holes (22A1 to 22A5) filled with a filling core (52), an additive layer (51) provided on an upper surface of the board base (50) as well as an upper surface of the filling core (52), wherein the additive layer (51) includes a wiring pattern (23A) having one or more paths, a semiconductor chip (32) fixed on an upper surface of the additive layer (51), and nodes (13A) provided on a lower surface of the board base (50), wherein the one or more paths are laid out without a restriction posed by the through-holes (22A1 to 22A5), and are used for electrically connecting the semiconductor chip (32) and the nodes (13A). <IMAGE>
Inventors
- 👤 Makoto Iijima
- 👤 Tetsushi Wakabayashi
- 👤 Toshio Hamano
- 👤 Masaharu Minamizawa
- 👤 Masashi Takenaka
- 👤 Taturou Yamashita
- 👤 Masataka Mizukoshi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 18:13
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/46; H05K3/4602; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W42/00; H10W42/20; H10W42/261; H10W42/276; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W70/65; H10W70/67; H10W70/68; H10W70/6875; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/117; H10W74/121; H10W76/40; H10W76/42; H10W76/47; H10W76/60; H10W90/00; H10W90/401; H10W90/701; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/0959; H05K2201/09654; H05K2201/09672; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/20; H10W72/251; H10W72/252; H10W72/851; H10W72/874; H10W72/877; H10W72/884; H10W74/15; H10W90/20; H10W90/288; H10W90/291; H10W90/297; H10W90/721; H10W90/722; H10W90/724; H10W90/731; H10W90/734; H10W90/736; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
122 words
A semiconductor device (30) characterized by comprising: a board base (50) having through-holes (22A₁ to 22A₅) filled with a filling core (52); an additive layer (51) provided on an upper surface of said board base (50) as well as an upper surface of said filling core (52), wherein said additive layer (51) includes a wiring pattern (23A) having one or more paths; a semiconductor chip (32) fixed on an upper surface of said additive layer (51); and nodes (13A) provided on a lower surface of said board base (50), wherein said one or more paths are laid out without a restriction posed by said through-holes (22A₁ to 22A₅), and are used for electrically connecting said semiconductor chip (32) and said nodes (13A).
Claim 2
Dependent Claim
35 words
The semiconductor device (30) as claimed in claim 1, characterized in that said one or more paths include at least one path which traverses at least one upper surface of said through-holes (22A₁ to 22A₅).
Claim 3
Dependent Claim
35 words
The semiconductor device (30) as claimed in claim 1, characterized in that said semiconductor chip (32) is fixed with its face down on said upper surface of said additive layer (51) by a bonding process.
Claim 4
Dependent Claim
61 words
The semiconductor device (30) as claimed in claim 3, characterized by further comprising: a dam member (33) having a frame shape and adhered to said upper surface of said additive layer (51) so as to surround said semiconductor chip (32); and a metal plate (34) adhered to a back surface of said semiconductor chip (32) and to said dam member (33).
Claim 5
Dependent Claim
66 words
The semiconductor device (90) as claimed in claim 4, characterized in that said metal plate (34A) has an opening (91) smaller than an area of a back surface of said semiconductor chip (32), said metal plate (34A) being adhered to said dam member (33) and to said back surface of said semiconductor chip (32) such that a center of said back surface is exposed to air.
Claim 6
Dependent Claim
36 words
The semiconductor device (100) as claimed in claim 5, characterized by further comprising a heat releasing fin (101) partly fitted into said opening (91) so as to be adhered to said center of said back surface.
Claim 7
Dependent Claim
65 words
The semiconductor device (110) as claimed in claim 3, characterized by further comprising a metal cap (111) having a plate portion of a plane shape and a peripheral portion downwardly depending from said plate portion, wherein said plate portion is adhered to a back surface of said semiconductor chip (32), and said peripheral portion is adhered to said upper surface of said additive layer (51).
Claim 8
Dependent Claim
36 words
The semiconductor device (120) as claimed in claim 7, characterized in that said metal cap (111A) has an opening (121) in said plate portion, so that a center of said back surface is exposed to air.
Claim 9
Dependent Claim
36 words
The semiconductor device (130) as claimed in claim 8, characterized by further comprising a heat releasing fin (101) partly fitted into said opening (121) so as to be adhered to said center of said back surface.
Claim 10
Dependent Claim
35 words
The semiconductor device (140) as claimed in claim 1, characterized in that said semiconductor chip (32A) is fixed with its face up on said upper surface of said additive layer (51) by a bonding process.
Claim 11
Dependent Claim
62 words
The semiconductor device (140) as claimed in claim 10, characterized by further comprising: a dam member (33) having a frame shape and adhered to said upper surface of said additive layer (51) so as to surround said semiconductor chip (32A); and a resin package (141) filled in an inside of said dam member (33) so as to seal said semiconductor chip (32A).
Claim 12
Dependent Claim
28 words
The semiconductor device (150) as claimed in claim 11, characterized by further comprising a heat releasing fin (151) adhered to an upper surface of said resin package (141).
Claim 13
Dependent Claim
18 words
The semiconductor device (30) as claimed in claim 1, characterized in that said nodes (13A) comprise solder balls.
Claim 14
Independent Claim
136 words
A method of forming a semiconductor device (30) characterized by comprising the steps of: forming through-holes (22A₁ to 22A₅) through a board base (50); forming through-hole inner layers (24A₁ to 24A₅) inside said through-holes (22A₁ to 22A₅) by plating metal and by etching said metal to leave said through-hole inner layers (24A₁ to 24A₅); filling said through-holes (22A₁ to 22A₅) with a synthetic resin (52); forming an insulator layer (56) on said board base (50) and on said synthetic resin (52) filling said through-holes (22A₁ to 22A₅); forming a wiring pattern (23A) on said insulator layer (56) by plating conductive metal and by etching said conductive metal to leave said wiring pattern (23A); fixing a semiconductor chip (32) over said board base (50); and forming nodes (13A) beneath a lower surface of said board base (50).
Claim 15
Dependent Claim
81 words
An assembly board characterized by comprising: a board base (50) having through-holes (22A₁ to 22A₅) filled with a filling core (52); and an additive layer (51) provided on an upper surface of said board base (50) as well as an upper surface of said filling core (52), wherein said additive layer (51) includes a wiring pattern (23A) having one or more paths, wherein said one or more paths are laid out without a restriction posed by said through-holes (22A₁ to 22A₅).
Claim 16
Dependent Claim
33 words
The assembly board claimed in claim 15, characterized in that said one or more paths include at least one path which traverses at least one upper surface of said through-holes (22A₁ to 22A₅).
Claim 17
Independent Claim
113 words
A method of forming an assembly board characterized by comprising the steps of: forming through-holes (22A₁ to 22A₅) through a board base (50); forming through-hole inner layers (24A₁ to 24A₅) inside said through-holes (22A₁ to 22A₅) by plating metal and by etching said metal to leave said through-hole inner layers (24A₁ to 24A₅); filling said through-holes (22A₁ to 22A₅) with a synthetic resin (52); forming an insulator layer (56) on said board base (50) and on said synthetic resin (52) filling said through-holes (22A₁ to 22A₅); and forming a wiring pattern (23A) on said insulator layer (56) by plating conductive metal and by etching said conductive metal to leave said wiring pattern (23A).
Claim 18
Dependent Claim
95 words
A semiconductor device (200) characterized by comprising: a semiconductor chip (201) having first electrodes (206) on one surface thereof and at least one second electrode (206) on another surface thereof; a board (202) having first wirings (209a) and second wirings (209b) for external connection, wherein said first wirings (209a) are connected to said first electrodes (206) so that said semiconductor chip (201) is mounted on said board (202); and a conductive member (205) covering said semiconductor chip (201) so as to electrically connect said at least one second electrode (206) with said second wirings (209b).
Claim 19
Dependent Claim
30 words
The semiconductor device (200) as claimed in claim 18, characterized in that said at least one second electrode (206) and said second wirings (209b) have substantially the same voltage levels.
Claim 20
Dependent Claim
45 words
The semiconductor device (200) as claimed in claim 18, characterized by further comprising an insulating member (211) covering said first electrodes (206) and said first wirings (209a) so that said first electrodes (206) and said first wirings (209a) are insulated from said conductive member (205).
Claim 21
Dependent Claim
20 words
The semiconductor device (200) as claimed in claim 18, characterized in that said board (202) comprises a printed wiring board.
Claim 22
Dependent Claim
19 words
The semiconductor device (200) as claimed in claim 18, characterized in that said board (202) comprises a ceramic board.
Claim 23
Dependent Claim
19 words
The semiconductor device (200) as claimed in claim 18, characterized in that said board (202) comprises a flexible board.
Claim 24
Dependent Claim
118 words
A semiconductor device (230) characterized by comprising: semiconductor chips (201A, 201B, 201C, 201D), each of which has first electrodes (206A, 206B, 206C, 206D) on one surface thereof and at least one second electrode (207A, 207B, 207C, 207D) on another surface thereof; a board (232) having first wirings (209a) and second wirings (209b) for external connection, wherein said first wirings (209a) are connected to said first electrodes (206A, 206B, 206C, 206D) so that said semiconductor chips (201A, 201B, 201C, 201D) are mounted on said board (232); and a conductive member (205) covering said semiconductor chips (201A, 201B, 201C, 201D) so as to electrically connect said at least one second electrode (207A, 207B, 207C, 207D) with said second wirings (209b).
Claim 25
Dependent Claim
33 words
The semiconductor device (230) as claimed in claim 24, characterized in that said at least one second electrode (207A, 207B, 207C, 207D) and said second wirings (209b) have substantially the same voltage levels.
Claim 26
Dependent Claim
51 words
The semiconductor device (230) as claimed in claim 24, characterized by further comprising an insulating member (211) covering said first electrodes (206A, 206B, 206C, 206D) and said first wirings (209a) so that said first electrodes (206A, 206B, 206C, 206D) and said first wirings (209a) are insulated from said conductive member (205).
Claim 27
Dependent Claim
20 words
The semiconductor device (230) as claimed in claim 24, characterized in that said board (232) comprises a printed wiring board.
Claim 28
Dependent Claim
19 words
The semiconductor device (230) as claimed in claim 24, characterized in that said board (232) comprises a ceramic board.
Claim 29
Dependent Claim
19 words
The semiconductor device (230) as claimed in claim 24, characterized in that said board (232) comprises a flexible board.
Claim 30
Dependent Claim
124 words
A semiconductor device (240) characterized by comprising: semiconductor chips (201, 241) piled one over another, a top one (201) of which semiconductor chips (201, 241) has first electrodes (206) on one surface thereof and at least one second electrode (207) on another surface thereof; a board (202) having first wirings (209a) and second wirings (209b) for external connection, wherein electrodes formed on a bottom one (241) of said semiconductor chips (201, 241) are connected to said first wirings (209a) and to said first electrodes (206); and a conductive member (205) partly covering said top one (201) of said semiconductor chips (201, 205) so as to electrically connect said at least one second electrode (207) of said top one (201) with said second wirings (209b).
Claim 31
Dependent Claim
35 words
The semiconductor device (240) as claimed in claim 30, characterized in that said at least one second electrode (207) of said top one (201) and said second wirings (209b) have substantially the same voltage levels.
Claim 32
Dependent Claim
45 words
The semiconductor device (240) as claimed in claim 30, characterized by further comprising an insulating member (242) covering said first electrodes (206) and said first wirings (209a) so that said first electrodes (206) and said first wirings (209a) are insulated from said conductive member (205).
Claim 33
Dependent Claim
20 words
The semiconductor device (240) as claimed in claim 30, characterized in that said board (202) comprises a printed wiring board.
Claim 34
Dependent Claim
18 words
The semiconductor device as claimed in claim 30, characterized in that said board (202) comprises a ceramic board.
Claim 35
Dependent Claim
18 words
The semiconductor device as claimed in claim 30, characterized in that said board (202) comprises a flexible board.
References Cited (Backward Citations)
No citation records indexed.
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