EP0684646A1
Expired / Lapsed
EP
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Antifuse and method of manufacturing it
Assignee: Texas Instruments Inc
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Filing: 1995-05-19
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Granted: —
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Expires: 2015-05-19
Abstract
Abstract A low leakage current antifuse (70, 98, or 100) is provided for use in user-programmable integrated circuitry. The antifuse has first (74) and second (96 or 110) connection metal layers for providing electricity to the antifuse. Between the metal layers is a dielectric layer (92 or 102), and between t he dielectric layer and at least one of the metal layers is a Schottky barrier layer (86, 94, or 108). The Schottky barrier layer minimizes the leakage current in the antifuse. More specifically,the barrier metal layer is a refractory metal having a work function substantially between 4.5 to 5.5eV.
Inventors
- 👤 Siang P. Kwok
- 👤 E. Ajith Amerasekera
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 23:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
58 words
An antifuse for use in integrated circuitry, comprising: first and second connection metal layers for providing electricity to the antifuse; a dielectric layer between said first and second metal layers; and a first barrier layer between the dielectric layer and at least one of the metal layers forming a Schottky barrier for minimizing leakage current in the antifuse.
Claim 2
Dependent Claim
13 words
The antifuse of Claim 1 wherein the barrier layer comprises a refractory metal.
Claim 3
Dependent Claim
21 words
The antifuse of Claim 1 or claim 2 wherein the refractory metal has a work function substantially between 4.5 to 5.5eV.
Claim 4
Dependent Claim
12 words
The antifuse of any preceding Claim, wherein the dielectric layer is a-Si.
Claim 5
Dependent Claim
42 words
The antifuse of any preceding Claim, further comprising a second barrier layer opposite the first barrier layer between the dielectric layer and the other metal layer, the second barrier layer forming a second Schottky barrier for minimizing leakage current in the antifuse.
Claim 6
Dependent Claim
21 words
The antifuse of Claim 5, wherein barrier layers comprise a refractory metal having a work function substantially between 4.5 to 5.5eV..
Claim 7
Dependent Claim
21 words
The antifuse of any preceding Claim, or each wherein the height of the Schottky barrier is substantially between 0.85 to 1.1eV.
Claim 8
Dependent Claim
21 words
The antifuse of any preceding Claim wherein the barrier layer and dielectric layer give the antifuse a substantially constant breakdown voltage.
Claim 9
Independent Claim
66 words
A method for forming an antifuse for use in integrated circuitry, comprising the steps of: forming first and second connection metal layers for providing electricity to the antifuse; forming a dielectric layer between the first and second metal layers; and forming a first Schottky barrier layer between the dielectric layer and at least one of the metal layers for minimizing the leakage current in the antifuse.
Claim 10
Dependent Claim
13 words
The method of Claim 9, further comprising forming the dielectric layer as a-Si.
Claim 11
Dependent Claim
56 words
The method of Claim 9 or claim 10, wherein the forming a first Schottky barrier layer step further comprises the steps of: forming a second dielectric layer; forming a barrier metal layer outwardly from the second dielectric layer; and sintering the dielectric layer and the barrier metal layer in order to form a Schottky barrier junction.
Claim 12
Independent Claim
35 words
The method of any of Claims 9 to 11 further comprising the step of forming a second Schottky barrier layer opposite the first Schottky barrier layer between the dielectric layer and the other metal layer.
Claim 13
Independent Claim
31 words
The method of any of Claims 9 to 12, further comprising forming the or each Schottky barrier layers comprising a refractory metal having a work function substantially between 4.5 to 5.5eV.
Claim 14
Independent Claim
24 words
The method of any of claims 9 to 13, further comprising providing the Schottky barrier having a height of substantially between 0.85 to 1.1eV.
Claim 15
Independent Claim
86 words
The method of any of claims 9 to 14, further a method for forming an antifuse for use in user-programmable integrated circuitry, comprising the steps of: forming the first connection metal layer; forming the first dielectric layer outwardly from the first metal layer; forming the barrier metal layer outwardly from the first dielectric layer; forming the first Schottky barrier layer with a portion of the first dielectric layer and the barrier metal layer; and forming the second connection metal layer outwardly from the Schottky barrier layer.
Claim 16
Dependent Claim
62 words
The method of Claim 15, further comprising, prior to the step of forming the first dielectric layer, the steps of: forming a second dielectric layer outwardly from the first connection metal layer; forming a second barrier metal layer outwardly from the second dielectric layer; and forming a second Schottky barrier layer with the second dielectric layer and the second barrier metal layer.
References Cited (Backward Citations)
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