Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
116 words
A solid-state imaging device comprising: a plurality of pixel MOS transistors for storing signal charges generated by photoelectric conversion, each of said pixel MOS transistors composed of a gate electrode connected to a vertical scanning line, a drain connected to a voltage source and a source connected to a vertical signal line; a capacitor connected between said vertical signal line and a fixed potential; reset means for resetting a potential of said capacitor to set a reset potential; and a switch for controlling a connection between one of said pixel MOS transistors and said capacitor so that a potential of said capacitor has the same potential as a channel potential of the pixel MOS transistor selected.
Claim 2
Dependent Claim
16 words
A solid-state imaging device according to claim 1, wherein said fixed potential is a ground potential.
Claim 3
Dependent Claim
27 words
A solid-state imaging device according to claim 1, wherein a capacitance of said capacitor is equal to or larger than a capacitance of said vertical signal line.
Claim 4
Dependent Claim
15 words
A solid-state imaging device according to claim 1, wherein said switch is an MOS switch.
Claim 5
Dependent Claim
23 words
A solid-state imaging device according to claim 1, wherein said reset means is a reset MOS switch connected in parallel to said capacitor.
Claim 6
Dependent Claim
20 words
A solid-state imaging device according to claim 5, wherein said reset means resets a potential of said vertical signal line.
Claim 7
Dependent Claim
29 words
A solid-state imaging device according to claim 5, further comprising means provided between said vertical signal line and said capacitor for resetting the potential of said vertical signal line.
Claim 8
Dependent Claim
41 words
A solid-state imaging device according to claim 1, wherein said switch is disposed between said vertical signal line and said capacitor and said reset means is connected to a vertical signal line disposed near said switch side rather than said capacitor.
Claim 9
Dependent Claim
41 words
A solid-state imaging device according to claim 1, wherein said switch is disposed between said vertical signal line and said capacitor and said reset means is connected to a vertical signal line disposed near said capacitor side rather than said switch.
Claim 10
Dependent Claim
53 words
A solid-state imaging device according to claim 1, wherein said reset potential is shallower than a channel potential obtained from the pixel MOS transistor when no light is incident on said pixel MOS transistor and a difference between said reset potential and said channel potential is set so as to fall within 2.0V.
Claim 11
Dependent Claim
37 words
A solid-state imaging device according to claim 1, further comprising means for completing a reading operation of a signal voltage from said pixel transistor to said capacitor in a weak inversion region of said pixel MOS transistor.
Claim 12
Dependent Claim
58 words
A solid-state imaging device according to claim 1, further comprising means for completing a reading operation off a signal voltage from said pixel MOS transistor to said capacitor at a timing point in which a value of a current flowed from said pixel transistor becomes a current value lower than an initial value by one figure or greater.
Claim 13
Dependent Claim
89 words
A solid-state imaging device comprising: a plurality of pixel bipolar transistors for storing signal charges generated by photoelectric conversion, each of said bipolar pixel transistors composed of a base connected to a scanning line, a collector connected to a voltage source and an emitter connected to a vertical signal line; a capacitor connected between said vertical signal line and a fixed potential; a switch disposed between said vertical signal line and said capacitor; and reset means for resetting the respective potentials of said capacitor and said vertical signal line.
Claim 14
Dependent Claim
28 words
A solid-state imaging device according to claim 13, wherein said reset means is connected to the vertical signal line disposed near said switch side rather than said capacitor.
Claim 15
Dependent Claim
28 words
A solid-state imaging device according to claim 13, wherein said reset means is connected to said vertical signal line disposed near said capacitor side rather than said switch.
Claim 16
Dependent Claim
121 words
A solid-state imaging device comprising: a plurality of pixel bipolar transistors for storing signal charges generated by photoelectric conversion, each of said pixel bipolar transistors composed of a base connected to a vertical scanning line, a collector connected to a voltage source and an emitter connected to a vertical signal line; a capacitor connected between said vertical signal line and a fixed potential; and reset means for resetting a potential of said capacitor to set a reset potential which is shallower than that obtained in a base of the pixel bipolar transistor when no light is incident on the pixel bipolar transistor, a potential difference between said reset potential and said base potential being set so as to fall within 2.0V.
Claim 17
Dependent Claim
52 words
A solid-state imaging device according to claim 16, further comprising a switch disposed between said vertical signal line and said capacitor and wherein said reset means is connected to the capacitor side rather than said switch and potentials of said capacitor and said vertical signal line are set to said reset potential.