Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
41 words
A variable inductance element comprising: one or a plurality of inductor conductors having a predetermined shape, and one or a plurality of switches functioning to separate or connect said inductor conductors, wherein: said inductor conductors are used independently or in combination.
Claim 2
Dependent Claim
16 words
A variable inductance element according to claim 1 wherein: said inductor conductor has a spiral shape.
Claim 3
Dependent Claim
16 words
A variable inductance element according to claim 1 wherein: said inductor conductor has a meander shape.
Claim 4
Dependent Claim
59 words
A variable inductance element according to any one of the claims 1 - 3 further comprising: two input/output terminals provided at the respective ends of said independent or combined inductor conductor, wherein: by said switch operation, said independent or combined inductor conductor length between said two input/output terminals is changed, whereby the inductance is changed between said input/output terminals.
Claim 5
Dependent Claim
38 words
A variable inductance element according to any one of the claims 1 - 4 wherein: said switches include a switch for cutting off an unnecessary closed loop produced by said inductor conductor according to said switch operating state.
Claim 6
Dependent Claim
40 words
A variable inductance element according to any one of the claims 1 - 5 wherein: said inductor conductor is formed on a semiconductor substrate, and said inductor conductor and said switch are formed in unitized manner on said semiconductor substrate.
Claim 7
Dependent Claim
49 words
A variable inductance element according to any one of the claims 1 - 6 wherein: said switch comprise a field effect transistor having two diffusion regions respectively functioning as source and drain formed in portions of said semiconductor substrate and respectively connected to different portions of said inductor conductor.
Claim 8
Dependent Claim
76 words
A variable inductance element according to any one of the claims 1 - 6 wherein: said switch comprise a transmission gate wherein n channel and p channel transistors are connected in parallel, said n channel and p channel transistors are formed as portions of said semiconductor substrate, and two diffusion regions functioning as source and drain of each of said n channel and p channel transistors are respectively connected to different portions of said inductor conductor.
Claim 9
Dependent Claim
31 words
A variable inductance element according to either one of the claims 7 or 8 wherein: said diffusion regions and channels of said switch are extended in length along said inductor conductor.
Claim 10
Dependent Claim
75 words
A variable inductance element according to any one of the claims 1 - 9 wherein: after forming said switch and said inductor conductor on said semiconductor substrate, an insulation film is formed on the entire surface of said semiconductor substrate, perforations are opened by removing portions of this insulation film by etching or laser light emission, and terminals are provided by closing the perforations with solder to the extent of protruding slightly from the surface.