EP0637845A1
Expired / Lapsed
EP
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Capacitor having a metal-oxide dielectric
Assignee: Motorola Solutions Inc
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Filing: 1994-07-12
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Granted: —
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Expires: 2014-07-12
Abstract
Abstract A capacitor with a metal-oxide dielectric layer (14, 115, 1542) is formed with an upper electrode layer (15, 107, 1543) that is electrically connected to an underlying circuit element (11, 103, 1525, 1526). The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element (112, 1525, 1526), such as a source/drain region of a transistor (103, 141, 142), a metal-oxide capacitor is formed over the circuit element. An opening (41, 104, 1544) is formed through the capacitor and extends to the circuit element (11, 103, 1525, 1526). An insulating spacer (51, 116, 1545) is formed, and a conductive member (61, 117,1546) is formed that electrically connects the circuit element (11, 103, 1525, 1526) to the upper electrode layer (15, 107, 1543) of the metal-oxide capacitor. Devices including DRAM and NVRAM cells (100, 140) and methods of forming them are disclosed.
Inventors
- 👤 Robert E. Jones
- 👤 Papu D. Maniar
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 15:37
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A semiconductor device comprising: a circuit element (11, 103, 1525, 1526); a capacitor overlying the circuit element (11, 112, 1525, 1526); and a conductive member (61, 117, 1546) that is electrically connected to the circuit element (11, 112, 1525, 1526), wherein the semiconductor device is characterized such that: the capacitor includes an electrode layer (13, 106, 1541) and a metal-oxide dielectric layer (14, 115, 1542) that overlies the electrode layer (13, 106, 1541); and a conductive member (61, 117, 1546) overlies the circuit element (11, 112, 1525, 1526) and the dielectric layer (14, 115, 1542) and is configured such that the conductive member (61, 117,1546) extends through the electrode (13, 106, 1541) and dielectric layers (14, 115, 1542) of the capacitor.
Claim 2
Dependent Claim
46 words
The device of claim 1, further characterized such that the metal-oxide dielectric layer (14, 115, 1542) includes a material selected from a group consisting of tantalum pentoxide, zirconium titanate, barium titanate, barium strontium titanate, strontium titanate, bismuth titanate, lead zirconate titanate, and lanthanum-doped lead zirconate titanate.
Claim 3
Dependent Claim
26 words
The device of claim 1, further characterized such that the underlying circuit element (112, 1525, 1526) is a source/drain region of a transistor (103, 141, 142).
Claim 4
Dependent Claim
31 words
The device of claim 1, further characterized such that the conductive member (61, 117, 1546) includes a material selected from a group consisting of silicon, a refractory metal, and titanium nitride.
Claim 5
Dependent Claim
56 words
The device of claim 1, further characterized by an insulating spacer (51, 116, 1545) lying adjacent to the conductive member (61, 117, 1546), the capacitor, and the circuit element (11, 112, 1525, 1526), wherein the insulating spacer (51, 116, 1545) includes a material selected from a group consisting of a refractory metal oxide and magnesium oxide.
Claim 6
Dependent Claim
117 words
A random-access memory cell (100, 140) comprising: a transistor (103, 141, 142) having a source/drain region (112, 1525, 1526); a capacitor overlying the source/drain region (112, 1525, 1526); and a conductive member (117, 1546) that is electrically connected the source/drain region (112, 1525, 1526), wherein the memory cell is characterized such that: the capacitor includes an electrode layer (106, 1541) and a metal-oxide dielectric layer (115, 1542) that overlies the electrode layer (106, 1541); and a conductive member (117, 1546) overlies the source/drain region (112, 1525, 1526) and the dielectric layer (115, 1542) and is configured such that the conductive member (117, 1546) extends through the electrode (106, 1541) and dielectric layers (115, 1542) of the capacitor.
Claim 7
Dependent Claim
52 words
The memory cell of clam 6, further characterized such that: the memory cell is a dynamic-random-access memory cell (50); and the metal-oxide dielectric layer (115, 1542) includes a material selected from a group consisting of tantalum pentoxide, zirconate titanate, barium strontium titanate, strontium titanate, lead zirconate titanate, and lanthanum-doped lead zirconate titanate.
Claim 8
Dependent Claim
51 words
The memory cell of claim 6, further characterized such that: the memory cell is a nonvolatile-random-access memory cell (100, 140); and the metal-oxide dielectric layer (115, 1542) includes a material selected from the group consisting of barium strontium titanate, barium titanate, bismuth titanate, lead zirconate titanate, and lanthanum-doped lead zirconate titanate.
Claim 9
Dependent Claim
31 words
The memory cell of claim 6, further characterized such that the conductive member (117, 1546) includes a material selected from a group consisting of silicon, a refractory metal, and titanium nitride.
Claim 10
Dependent Claim
53 words
The memory cell of claim 6, further characterized by an insulating spacer (116, 1545) lying adjacent to the conductive member (117, 1546), the capacitor, and the source/drain region (112, 1525, 1526), wherein the insulating spacer (116, 1545) includes a material selected from a group consisting of a refractory metal oxide and magnesium oxide.
References Cited (Backward Citations)
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