Patent EP0637841A2 successfully refreshed from Google Patents.
EP0637841A2
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Thin film semiconductor device and fabrication method
Assignee: Hitachi Ltd
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Filing: 1994-07-28
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Granted: —
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Expires: 2014-07-28
Abstract
Abstract A thin-film semiconductor device comprising at least a semiconductor element (204) and a wiring (208) is disclosed. A thin film of a protective insulating material (206) is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semiconductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
Inventors
- 👤 Mitsuo Usami
- 👤 Takashi Tase
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 21:27
CPC Classifications
G; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G06K19/077; G06K19/0772; G06K19/07728; G06K19/07749; H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10W; H10W42/00; H10W42/121; H10W70/00; H10W70/099; H10W70/60; H10W70/611; H10W70/614; H10W70/699; H10P72/7426; H10P72/7428; H10P72/743; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
46 words
A thin-film semiconductor device comprising: at least a semiconductor element (204) and a wiring (208); a thin film of a protective insulating material (206) formed on the lower surface of said semiconductor element; and a substrate (207) bonded on the lower surface of said thin film.
Claim 2
Dependent Claim
72 words
A semiconductor device according to Claim 1, wherein said semiconductor device is a thin film of a semiconductor circuit formed on a silicon-on-insulator wafer, and said substrate is coupled to the opposite surface of the thin-film semiconductor circuit formed with the semiconductor circuit, said semiconductor device further comprising a hardenable conductive material for connecting the wiring formed on the substrate in advance and the channel of said semiconductor circuit to each other.
Claim 3
Dependent Claim
39 words
A semiconductor device according to Claim 2, wherein said semiconductor element is a thin-film semiconductor circuit taken out from the main surface of the silicon-on-insulator wafer with the insulator layer (14) inward of the silicon-on-insulator wafer as a boundary.
Claim 4
Dependent Claim
38 words
A semiconductor device according to Claim 1, wherein said substrate and the thin film of a protective insulating material formed on the lower surface of the semiconductor element are coupled to each other by a rubber-like adhesive (17).
Claim 5
Dependent Claim
33 words
A semiconductor device according to Claim 2, wherein the main surface of said semiconductor device is bonded to a support substrate (11), and then the silicon-on-insulator wafer substrate is ground or etched off.
Claim 6
Dependent Claim
29 words
A semiconductor device according to Claim 1, wherein the substrate bonded on the lower surface of the thin film of the protective insulating material is a flexible card-shaped substrate.
Claim 7
Dependent Claim
13 words
A semiconductor device according to Claim 5, wherein said support substrate is flexible.
Claim 8
Dependent Claim
25 words
A semiconductor device according to Claim 5, wherein said semiconductor device is bonded to said support substrate by an adhesive separable under ultraviolet ray (19).
Claim 9
Dependent Claim
21 words
A semiconductor device according to Claim 2, wherein said hardenable conductive material is formed by print wiring with a rotary drum.
Claim 10
Dependent Claim
41 words
A semiconductor device according to Claim 1, wherein a substrate having the same thickness as the substrate bonded on the lower surface of the thin film of said protective insulating material is bonded on the upper surface of said semiconductor element.
Claim 11
Dependent Claim
51 words
A semiconductor device according to Claim 10, wherein said semiconductor element is arranged equidistantly from the reverse side of the substrate bonded on the lower surface of the thin film of the protective insulating material and the front surface of the substrate bonded on the upper surface of said semiconductor element.
Claim 12
Dependent Claim
65 words
A semiconductor device according to Claim 10, wherein the thickness of the thin-film semiconductor element is 110 microns or less for the semiconductor device having a thickness of 760 microns or more, 19 microns or less for the semiconductor device having a thickness of 500 microns or more, and 4 microns or less for the semiconductor device having a thickness of 250 microns or more.
Claim 13
Dependent Claim
34 words
A semiconductor device according to Claim 10, wherein the thickness of the thin-film semiconductor element is at least 4 microns or less for the semiconductor device having a thickness of 250 microns or less.
Claim 14
Dependent Claim
23 words
A semiconductor device according to Claim 10, wherein said thin-film semiconductor device is bonded to said two card substrates by a flexible adhesive.
Claim 15
Dependent Claim
15 words
A semiconductor device according to Claim 1, wherein said protective insulating material is silicon nitride.
Claim 16
Independent Claim
72 words
A method for fabricating a thin-film semiconductor device comprising a semiconductor element and a wiring, comprising the steps of: forming a thin-film semiconductor circuit on a silicon-on-insulator wafer (101); etching the silicon substrate off from the reverse side of said silicon-on-insulator wafer (102); forming a thin-film semiconductor chip (103); attaching the thin-film semiconductor chip thus formed to a substrate (104); and wiring by printing said thin-film semiconductor chip and the substrate (105).
Claim 17
Dependent Claim
59 words
A method for fabricating a thin-film semiconductor device according to Claim 16, wherein said step of wiring by printing includes the substeps of transferring conductive ink of a predetermined wiring pattern to a rotary drum and transferring the wiring pattern of conductive ink on said rotary drum to said substrate and the thin-film semiconductor chip attached on said substrate.
References Cited (Backward Citations)
No citation records indexed.
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