Patent EP0632554A2 successfully refreshed from Google Patents.
EP0632554A2
Expired / Lapsed
EP
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Semiconductor light emitting device
Assignee: Sony Corp
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Filing: 1994-06-29
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Granted: —
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Expires: 2014-06-29
Abstract
Abstract A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily. <IMAGE>
Inventors
- 👤 Satoshi C/O Sony Corporation Ito
- 👤 Toyoharu C/O Sony Corporation Ohata
- 👤 Akira C/O Sony Corporation Ishibashi
- 👤 Norikazu Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 04:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; B; B82; B82Y; B82Y20/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/20; H01S5/22; H01S5/2205; H01S5/2214; H01S5/3211; H01S5/34; H01S5/347; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
A semiconductor light-emitting device comprising: a first cladding layer of a first conduction type stacked on a compound semiconductor substrate and made of a ZnMgSSe compound semiconductor; an active layer stacked on said first cladding layer; and a second cladding layer of a second conduction type stacked on said active layer and made of a ZnMgSSe compound semiconductor, wherein a ZnSSe compound semiconductor layer is provided on said second cladding layer and/or between said compound semiconductor substrate and said first cladding layer.
Claim 2
Dependent Claim
22 words
The semiconductor light-emitting device according to claim 1 wherein said ZnSSe compound semiconductor layer is provided only on said second cladding layer.
Claim 3
Dependent Claim
27 words
The semiconductor light-emitting device according to claim 1 wherein said ZnSSe compound semiconductor layer is provided only between said compound semiconductor substrate and said first cladding layer.
Claim 4
Dependent Claim
33 words
The semiconductor light-emitting divice according to claim 1 wherein said ZnSSe compound semiconductor layer is provided both on said second cladding layer and between said compound semiconductor substrate and said first cladding layer.
Claim 5
Dependent Claim
25 words
The semiconductor light-emitting device according to claim 2 wherein said ZnSSe compound semiconductor layer is 0.1∼2µm thick, and said second cladding layer is 0.2∼2µm thick.
Claim 6
Dependent Claim
25 words
The semiconductor light-emitting device according to claim 3 wherein said ZnSSe compound semiconductor layer is 0.01∼2µm thick, and said first cladding layer is 0.2∼2µm thick.
Claim 7
Dependent Claim
55 words
The semiconductor light-emitting device according to claim 4 wherein said ZnSSe compound semiconductor layer between said compound semiconductor substrate and said first cladding layer is 0.01∼2µm thick, said ZnSSe compound semiconductor layer on said second cladding layer is 0.1∼2µm thick, said first cladding layer is 0.2∼2µm thick, and said second cladding layer is 0.2∼2µm thick.
Claim 8
Dependent Claim
41 words
The semiconductor light-emitting device according to claim 2, wherein said second cladding layer and said ZnSSe compound semiconductor layer are of p-type, and a p-type contact layer made of a ZnSe compound semiconductor is stacked on said ZnSSe compound semiconductor layer.
Claim 9
Dependent Claim
16 words
The semiconductor light-emitting device according to claim 8 wherein said p-type contact layer is 30∼150nm thick.
Claim 10
Dependent Claim
19 words
The semiconductor light-emitting device according to claim 1 wherein said active layer is made of a ZnCdSe compound semiconductor.
Claim 11
Dependent Claim
17 words
The semiconductor light-emitting device according to claim 1 wherein said compound semiconductor substrate is a GaAs substrate.
References Cited (Backward Citations)
No citation records indexed.
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