Patent EP0631319A1 successfully refreshed from Google Patents.
EP0631319A1
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Dielectric thin film device and manufacturing method thereof
Assignee: Sharp Corp
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Filing: 1994-06-22
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Granted: —
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Expires: 2014-06-22
Abstract
Abstract A dielectric thin film device is constructed by a dielectric thin film (5) of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0 < x < 1 and 0 < y < 1. The film element (5) may include a thermally grown silicon dioxide film (2), a titanium film (3), a platinum lower electrode (4), a film (5) of lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.75 and 0.05 ≦ y ≦ 0.1, and a platinum upper electrode (6) sequentially formed on an n-type silicon substrate (1).
Inventors
- 👤 Yoshiyuki Masuda
- 👤 Yasushi Ogimoto
- 👤 Noboru Ootani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:48
CPC Classifications
G; G01; G01N; G01N29/00; G01N29/02; G01N29/022; C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; H; H10; H10B; H10B53/00; H10N; H10N15/00; H10N15/10; H10N15/15; H10N30/00; H10N30/30; H10N30/302; G01N2291/00; G01N2291/04; G01N2291/042; G01N2291/0427
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
15 words
A dielectric thin film element having a dielectric thin film (5) including Pb(Zr,Ti)O₃ and erbium.
Claim 2
Dependent Claim
48 words
A dielectric thin film element as claimed in claim 1, wherein the dielectric thin film (5) is of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0 < x < 1 and 0 < y < 1.
Claim 3
Dependent Claim
31 words
A dieletectric thin film element as claimed in claim 2, wherein 0.45 ≦ x ≦ 0.8 and 0.005 ≦ y ≦ 0.05 and the dielectric thin film (5) has ferroelectric properties.
Claim 4
Dependent Claim
33 words
A dielectric thin film element as claimed in claim 2, wherein 0.45 ≦ x ≦ 0.75 and 0.05 ≦ y ≦ 0.1 and the dielectric thin film (5) has high dielectric constant characteristics.
Claim 5
Dependent Claim
57 words
A dielectric thin film element as claimed in claim 3 or claim 4, comprising a thermally grown silicon dioxide film (2), a titanium film (3), a platinum lower electrode (4), a dielectric thin film (5) as specified in claim 3 or claim 4, and a platinum upper electrode (6) sequentially formed on an n-type silicon substrate (1).
Claim 6
Independent Claim
98 words
A method for fabricating a dielectric thin film (5), comprising the steps of: coating a substrate with a precursor solution of lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃; drying the coated solution at a high temperature to obtain a dry gel; and thermally treating the dry gel at a higher temperature to form a dielectric thin film (5) of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.8 and 0.005 ≦ y ≦ 0.1.
Claim 7
Dependent Claim
61 words
A non-volatile memory combined with a switching transistor using a dielectric thin film (5) as a capacitor insulating layer connected to a MOS transistor, the dielectric thin film (5) being of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.52 ≦ x ≦ 0.7 and 0.005 ≦ y ≦ 0.05.
Claim 8
Dependent Claim
66 words
A metal ferroelectric metal insulator semiconductor FET as a MFMIS-FET in which a dielectric thin film (22) is buried as an insulating gate film of a field effect transistor, the dielectric thin film (22) being of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.8 and 0.005 ≦ y ≦ 0.05.
Claim 9
Dependent Claim
60 words
A flattened STC-type DRAM comprising a number of memory cells each constructed by one transistor (34) and a capacitor (30), the capacitor (30) having a dielectric thin film (32) of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.75 and 0.05 ≦ y ≦ 0.1.
Claim 10
Dependent Claim
71 words
An infrared linear array sensor of a pyroelectric thin film type comprising a light receiving electrode (41), a dielectric thin film (42) and an array electrode (43) sequentially formed to detect an infrared ray, the dielectric thin film (42) being of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.75 and 0.005 ≦ y ≦ 0.1.
Claim 11
Dependent Claim
61 words
A piezoelectric sensor comprising a cantilever beam (52), a first electrode (53), a dielectric thin film (54) and a second electrode (55) sequentially formed, the dielectric thin film (54) being of a lead erbium zirconate titanate represented as (Pb 1-y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.75 and 0.005 ≦ y ≦ 0.1.
Claim 12
Dependent Claim
72 words
An optical modulator of a waveguide type comprising a dielectric thin film (61), a buffer layer (64) and two separated metallic electrodes (65,66) formed on a substrate (60) at the crossing point of two waveguides, the dielectric thin film (61) being of a lead erbium zirconate titanate represented as (Pb₁₋ y Er y ) (Zr x Ti 1-x )O₃ in which 0.45 ≦ x ≦ 0.75 and 0.005 ≦ y ≦ 0.1.
References Cited (Backward Citations)
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