EP0627664A1
Expired / Lapsed
EP
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Method for the repair of phase shifting masks
Assignee: International Business Machines Corp
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Filing: 1994-06-06
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Granted: —
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Expires: 2014-06-06
Abstract
Abstract The present invention relates to a method for the repair of void type defects in phase-shifting optical lithography masks by depositing a transparent mateial on the defect from a gaseous precursor by ultraviolet beam-induced deposition.
Inventors
- 👤 Thomas Hall Baum
- 👤 Paul Brain Comita
- 👤 Franklin Mark Schellenberg
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 02:50
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/68; G03F1/72
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
30 words
A method for repairing a defect in a phase shifting mask comprising the step of depositing a transparent material on the defect from a gaseous precursor by ultraviolet beam-induced deposition.
Claim 2
Dependent Claim
13 words
The method of claim 1 wherein said beam is generated by a laser.
Claim 3
Dependent Claim
18 words
The method of claim 2 wherein the precursor is selected from chromium hexacarbonyl, tetraalkoxy silicon and trialkoxy aluminum.
Claim 4
Independent Claim
46 words
A method for repairing a phase-shifting defect in a phase-shifting mask comprising the steps of: (i) contacting the phase-shifting mask with a decomposable gaseous precursor, and (ii) focusing an ultraviolet beam on the defect to decompose the gaseous precursor and deposit transparent material on the defect.
Claim 5
Dependent Claim
14 words
The method of claim 4 wherein said ultraviolet beam is generated by a laser.
Claim 6
Dependent Claim
18 words
The method of claim 5 wherein the precursor is selected from chromium hexacarbonyl, tetraalkoxy silicon and trialkoxy aluminum.
Claim 7
Dependent Claim
27 words
A phase-shifting mask which has been repaired by depositing a transparent material on a phase-shifting defect in the mask from a gaseous precursor by ultraviolet beam-induced deposition.
Claim 8
Dependent Claim
13 words
The mask of claim 7 wherein said beam is generated by a laser.
Claim 9
Dependent Claim
18 words
The mask of claim 8 wherein the precursor is selected from chromium hexacarbonyl, tetraalkoxy silicon and trialkoxy aluminum.
References Cited (Backward Citations)
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