Patent EP0613181A1 successfully refreshed from Google Patents.
EP0613181A1
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EP
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Bipolar transistor compatible with CMOS processes
Assignee: STMicroelectronics SRL
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Filing: 1993-02-26
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Granted: —
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Expires: 2013-02-26
Abstract
Abstract A bipolar transistor (2), comprising a collector region (C1), base region (B1), and emitter region (E1), is a compatible type to CMOS processes leading to the formation, on a semiconductor substrate (10), of N-channel and P-channel MOS transistors having respective source and drain regions; in such transistor the collector region (C1) is a substrate diffused pocket (3) and the base region (B1) is formed within the diffused pocket (3) simultaneously with the source (8) and drain (9) regions of the P-channel MOS transistors (7). Further, the emitter region (E1) is incorporated, in turn, to the base region (B1) simultaneously with the source and drain regions of the N-channel MOS transistors.
Inventors
- 👤 Bruno Vajana
- 👤 Emilio Ghio
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 12:36
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
109 words
A bipolar transistor (2) comprising a collector region (C1), base region (B1), and emitter region (E1) and being of a compatible type to CMOS processes which lead to produce, on a semiconductor substrate (10), N-channel and P-channel MOS transistors (7) having respective source and drain regions, characterized in that said collector region (C1) is a diffused pocket in said substrate, said base region (B1) is formed within the diffused pocket (3) simultaneously with the source (8) and drain (9) regions of the P-channel MOS transistors, and said emitter region (E1) is incorporated to the base region (B1) simultaneously with the source and drain regions of the N-channel MOS transistors.
Claim 2
Dependent Claim
19 words
A bipolar transistor according to Claim 1, characterized in that said diffused pocket (3) is of the N-Well type.
Claim 3
Dependent Claim
38 words
A bipolar transistor according to Claim 1, characterized in that said base region (B1) is obtained by ion implantation with the same dopant implanted in the source (8) and drain (9) regions of the P-channel MOS transistors (7).
Claim 4
Dependent Claim
20 words
A bipolar transistor according to Claim 3, characterized in that said base region (B1) doping is of the P- type.
Claim 5
Dependent Claim
20 words
A bipolar transistor according to Claim 4, characterized in that said base region (B1) doping is a low-concentration LDD type.
Claim 6
Dependent Claim
36 words
A bipolar transistor according to Claim 1, characterized in that said emitter region (E1) is obtained by ion implantation with the same dopant implanted in the source and drain (14) regions of the N-channel MOS transistors.
Claim 7
Dependent Claim
17 words
A bipolar transistor according to Claim 1, characterized in that said dopant is of the N+ type.
Claim 8
Dependent Claim
18 words
A bipolar transistor according to Claim 1, characterized in that it is a vertical transistor with NPN structure.
Claim 9
Dependent Claim
18 words
A bipolar transistor according to Claim 1, characterized in that it is a lateral transistor with NPN structure.
Claim 10
Dependent Claim
45 words
A CMOS transistor structure characterized in that it comprises a parasitic bipolar transistor as claimed in Claim 1, and that it is formed, with no further process steps added, simultaneously with the CMOS structures comprising P-channel MOS transistors with a configuration of the LDD type.
Claim 11
Dependent Claim
33 words
A bipolar transistor according to Claim 1, characterized in that said base region (B1) is formed, through suitable masking, by a P- implantation subsequently to defining the gate regions of said MOS transistors.
References Cited (Backward Citations)
US4120707A
Cited
US4403395A
Cited
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