Patent EP0606093A2 successfully refreshed from Google Patents.
EP0606093A2
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EP
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Semiconductor optical integrated circuits and method for fabricating the same
Assignee: NEC Corp
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Filing: 1994-01-07
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Granted: —
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Expires: 2014-01-07
Abstract
Abstract The invention provides a semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. said epitaxial layers in said active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in said active region except in said passive region. Said first mask pattern having a variation in width along said waveguide direction. Said epitaxial layers are simultaneously and non-selectively grown on an entire of said passive region by said metal organic vapor phase epitaxy and said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region. A cladding layer having a ridged structure selectively is grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in said active and passive regions. Said second mask pattern having a constant width. In said active region said ridged cladding layer completely embedding said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers.
Inventors
- 👤 Tatsuya C/O Nec Corporation Sasaki
- 👤 Mitsuhiro C/O Nec Corporation Kitamura
- 👤 Kiichi C/O Nec Corporation Hamamoto
- 👤 Shotaro C/O Nec Corporation Kitamura
- 👤 Keiro C/O Nec Corporation Komatsu
- 👤 Yasutaka C/O Nec Corporation Sakata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 13:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/02; H01S5/026; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S2304/00; H01S2304/04; H01S5/0265; H01S5/06258; H01S5/10; H01S5/1003; H01S5/12; H01S5/125; H01S5/20; H01S5/2054; H01S5/2077; H01S5/22; H01S5/227; H01S5/2272; H01S5/4068; H01S5/4087
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
274 words
A semiconductor optical monolithic integration device comprises : a semiconductor substrate including an active region and a passive region ; epitaxial layers including a multiple quantum well structure having a variation in band gap energy and thickness along a waveguide direction, a band gap energy of said quantum well structure in said active region being smaller than a band gap energy thereof in said passive wavguide region, said epitaxial layers in said active region being selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in said active region except in said passive region, said first mask pattern having a variation in width along said waveguide direction, said epitaxial layers being simultaneously and non-selectively grown on an entire of said passive region by said metal organic vapor phase epitaxy and said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region ; a cladding layer having a ridged structure selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in said active and passive regions, said second mask pattern having a constant width, in said active region said ridged cladding layer completely embedding said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers ; and a first electrode provided on both a bottom of said semiconductor substrate and a second electrode selectively formed on a top of said ridged cladding layer in said active region except in said passive region.
Claim 2
Dependent Claim
32 words
The device as claimed in claim 1, wherein said multiple quantum well structure is grown at the highest growth pressure in any other growth pressures for said metal organic vapor phase epitaxy.
Claim 3
Dependent Claim
23 words
The device as claimed in claim 1, wherein said multiple quantum well structure is grown at a growth pressure more than 150 Torr.
Claim 4
Dependent Claim
20 words
The device as claimed in claim 1, wherein said semiconductor substrate partially has a first-order grating with a constant pitch.
Claim 5
Dependent Claim
33 words
The device as claimed in claim 4, wherein said integration device has multiple channels and said quantum well layer on said grating has different band gap energies in each of said multiple channels.
Claim 6
Dependent Claim
32 words
The device as claimed in claim 1, further comprising a guide layer and a spacer layer having a plane structure which are in turn formed on an entire of said semiconductor substrate.
Claim 7
Dependent Claim
264 words
A semiconductor optical monolithic integration device comprises : a semiconductor substrate including an active region and a passive region ; epitaxial layers including a multiple quantum well structure having a variation in band gap energy and thickness along a waveguide direction, a band gap energy of said quantum well structure in said active region being smaller than a band gap energy thereof in said passive wavguide region, said epitaxial layers in said active region being selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in said active region except in said passive region, said first mask pattern having a constant width along said waveguide direction, said epitaxial layers being simultaneously and non-selectively grown on an entire of said passive region by said metal organic vapor phase epitaxy and said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region; a cladding layer having a ridged structure selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in said active and passive regions, in said active region said ridged cladding layer completely embedding said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers ; and a first electrode provided on both a bottom of said semiconductor substrate and a second electrode selectively formed on a top of said ridged cladding layer in said active region except in said passive region.
Claim 8
Dependent Claim
32 words
The device as claimed in claim 7, wherein said multiple quantum well structure is grown at the highest growth pressure in any other growth pressures for said metal organic vapor phase epitaxy.
Claim 9
Dependent Claim
23 words
The device as claimed in claim 7, wherein said multiple quantum well structure is grown at a growth pressure more than 150 Torr.
Claim 10
Dependent Claim
20 words
The device as claimed in claim 7, wherein said semiconductor substrate partially has a first-order grating with a constant pitch.
Claim 11
Dependent Claim
33 words
The device as claimed in claim 10, wherein said integration device has multiple channels and said quantum well layer on said grating has different band gap energies in each of said multiple channels.
Claim 12
Dependent Claim
32 words
The device as claimed in claim 7, further comprising a guide layer and a spacer layer having a plane structure which are in turn formed on an entire of said semiconductor substrate.
Claim 13
Independent Claim
306 words
A method of fabricating an optical monolithic integration device comprising the steps of : providing a first mask pattern in an active region except in a passive region, said first mask pattern having a variation in width along said waveguide direction, said first mask pattern defines a first selective growth area growing epitaxial layers including a multiple quantum well structure by a metal organic vapor phase epitaxy with use of said first mask pattern so that said epitaxial layers in said active region are selectively grown on said first selective growth area defined by said first mask pattern and further simultaneously and non-selectively grown on an entire of said passive region, said epitaxial layers having a variation in band gap energy and thickness along a waveguide direction, a band gap energy of said quantum well structure in said active region being smaller than a band gap energy thereof in said passive wavguide region, said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region ; removing said first mask pattern ; providing a second mask pattern having a constant width in said active and passive regions, said second mask pattern defines a second selective growth area ; growing selectively a cladding layer having a ridged structure by a metal organic vapor phase epitaxy on said second selective growth area defined by said second mask pattern provided so that in said active region said ridged cladding layer completely embeds said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers ; and providing a first electrode provided on both a bottom of said semiconductor substrate and a second electrode selectively formed on a top of said ridged cladding layer in said active region except in said passive region.
Claim 14
Dependent Claim
32 words
The method as claimed in claim 13, wherein said multiple quantum well structure is grown at the highest growth pressure in any other growth pressures for said metal organic vapor phase epitaxy.
Claim 15
Dependent Claim
23 words
The method as claimed in claim 13, wherein said multiple quantum well structure is grown at a growth pressure more than 150 Torr.
Claim 16
Dependent Claim
24 words
The method as claimed in claim 13, wherein a first-order grating with a constant pitch is formed on a part of said semiconductor substrate.
Claim 17
Dependent Claim
30 words
The method as claimed in claim 16, wherein said device has multiple channels and said first mask pattern provided on said grating has different widths in each of multiple channels.
Claim 18
Dependent Claim
38 words
The method as claimed in claim 13, further comprising the steps of : before the first step, forming in turn a guide layer and a spacer layer having a plane structure on an entire of said semiconductor substrate.
Claim 19
Independent Claim
302 words
A method of fabricating an optical monolithic integration device comprising the steps of : providing a first mask pattern in an active region except in a passive region, said first mask pattern having a constant width along a waveguide direction, said first mask pattern defines a first selective growth area ; growing epitaxial layers including a multiple quantum well structure by a metal organic vapor phase epitaxy with use of said first mask pattern so that said epitaxial layers in said active region are selectively grown on said first selective growth area defined by said first mask pattern and further simultaneously and non-selectively grown on an entire of said passive region, said epitaxial layers having a variation in band gap energy and thickness along a waveguide direction, a band gap energy of said quantum well structure in said active region being smaller than a band gap energy thereof in said passive wavguide region, said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region ; removing said first mask pattern ; providing a second mask pattern in said active and passive regions, said second mask pattern defines a second selective growth area ; growing selectively a cladding layer having a ridged structure by a metal organic vapor phase epitaxy on said second selective growth area defined by said second mask pattern provided so that in said active region said ridged cladding layer completely embeds said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers ; and providing a first electrode provided on both a bottom of said semiconductor substrate and a second electrode selectively formed on a top of said ridged cladding layer in said active region except in said passive region.
Claim 20
Dependent Claim
32 words
The method as claimed in claim 19, wherein said multiple quantum well structure is grown at the highest growth pressure in any other growth pressures for said metal organic vapor phase epitaxy.
Claim 21
Dependent Claim
23 words
The method as claimed in claim 19, wherein said multiple quantum well structure is grown at a growth pressure more than 150 Torr.
Claim 22
Dependent Claim
24 words
The method as claimed in claim 19, wherein a first-order grating with a constant pitch is formed on a part of said semiconductor substrate.
Claim 23
Dependent Claim
30 words
The method as claimed in claim 22, wherein said device has multiple channels and said first mask pattern provided on said grating has different widths in each of multiple channels.
Claim 24
Dependent Claim
38 words
The method as claimed in claim 13, further comprising the steps of : before the first step, forming in turn a guide layer and a spacer layer having a plane structure on an entire of said semiconductor substrate.
References Cited (Backward Citations)
No citation records indexed.
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