Patent EP0599730A2 successfully refreshed from Google Patents.
EP0599730A2
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EP
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Semiconductor device and method of producing the same
Assignee: Tokyo Electron Ltd
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Filing: 1993-11-23
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Granted: —
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Expires: 2013-11-23
Abstract
Abstract A semiconductor device and a method of producing the same are disclosed. An Si oxide film is formed by a plasma CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.
Inventors
- 👤 Takashi Fukada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 19:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6548; H10P14/69215; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/098
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
20 words
A semiconductor device comprising an insulating film including an Si oxide film which contains 0.1 to 20 atom.% of fluorine.
Claim 2
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said insulating film is used as an interlayer dielectric film.
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said insulating film is used as a passivation film.
Claim 4
Dependent Claim
34 words
A semiconductor device according to claim 1, further comprising a wiring, wherein said insulating film includes an Si oxide film which does not contain fluorine and is formed on a surface of said wiring.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 1, further comprising wirings, wherein said Si oxide film is formed between adjacent wirings.
Claim 6
Dependent Claim
21 words
A semiconductor device comprising an insulating film including an Si oxide film which has a dielectric constant of 3.7 to 2.9.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 6, wherein said insulating film is used as an interlayer dielectric film.
Claim 8
Dependent Claim
17 words
A semiconductor device according to claim 6, wherein said insulating film is used as a passivation film.
Claim 9
Independent Claim
52 words
A method of producing a semiconductor device, comprising forming an Si oxide film as an interlayer dielectric film or a passivation film with the use of a silicon compound gas which contains fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD (chemical vapor deposition).
Claim 10
Dependent Claim
22 words
A method of producing a semiconductor device according to claim 9, wherein said plasma CVD is one enforced in a magnetic field.
Claim 11
Dependent Claim
23 words
A method of producing a semiconductor device according to claim 10, wherein said plasma CVD is an ECR (electron cyclotron resonance) plasma CVD.
Claim 12
Dependent Claim
28 words
A method of producing a semiconductor device according to claim 9, wherein said Si oxide film is formed as applying a negative direct current voltage to a substrate.
Claim 13
Dependent Claim
26 words
A method of producing a semiconductor device according to claim 9, wherein said Si oxide film is formed as applying a high-frequency voltage to a substrate.
Claim 14
Independent Claim
106 words
A method of producing a semiconductor device, comprising the steps of : forming a first Si oxide film as an interlayer dielectric film or a passivation film with the use of a silicon compound gas which does not contain fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD ; and forming a second Si oxide film as an interlayer dielectric film or a passivation film on said first Si oxide film, with the use of a silicon compound gas which contains fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD.
Claim 15
Independent Claim
101 words
A method of producing a semiconductor device, comprising the steps of : forming a second Si oxide film as an interlayer dielectric film with the use of a silicon compound gas which contains fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD ;and forming a first Si oxide film as an interlayer dielectric film or a passivation film on said second Si oxide film, with the use of a silicon compound gas which does not contain fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD.
Claim 16
Independent Claim
156 words
A method of producing a semiconductor device, comprising the steps of : forming a first Si oxide film as an interlayer dielectric film or a passivation film with the use of a silicon compound gas which does not contain fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD ; forming a second Si oxide film as an interlayer dielectric film or passivation film on said first Si oxide film, with the use of a silicon compound gas which contains fluorine, and a gas selected from the group consisting of O₂ and N₂O by a plasma CVD ; and forming a third Si oxide film as an interlayer dielectric film or a passivation film on said second Si oxide film, with the use of a silicon compound gas which does not contain fluorine, and a gas selected from the group consisting of O₂ an N₂O by a plasma CVD.
References Cited (Backward Citations)
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