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Patent EP0599539A2 successfully refreshed from Google Patents.
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EP0599539A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method for forming a pattern by silylation

Assignee: Samsung Electronics Co Ltd
•
Filing: 1993-11-17
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Granted: —
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Expires: 2013-11-17
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Abstract

Abstract A method for forming a pattern where the processing is simplified by using a silylated photoresist film, having retained the resolution increasing effect according to a multi-layer photoresist film process is disclosed, wherein a first photoresist layer (21) is formed on substrate (20) and part of the surface of the substrate is silylated, to thereby form a silylation layer (23). Then, a second photoresist layer (24) is formed on silylation layer (23), which then is exposed through the photo mask (25) having a predetermined pattern. Then, a second photoresist pattern (24a) is formed after development. Then, a silylation layer pattern (23a) is formed by etching-back the silylation layer (23) using the second photoresist pattern as (24a) an etching mask. Then, the silylation pattern (23a) is oxidized. and the first photoresist layer (21) is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern (21a). A resolution increasing effect can be maintained only through the two layer photoresist film structure without the intermediate oxide film, while the process is simplified and the undesired polymer is less generated.

Inventors

  • 👤 Cheol-Hong Na-302 Changwon Villa Kim
  • 👤 Woo-Sung 7-101 Dongnam Apt. Han

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 12:37
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/004; G03F7/075; G03F7/0755; G03F7/09; G03F7/094; G03F7/095

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 132 words
A method for forming a pattern comprising the steps of: forming a first photoresist layer (21) on the substrate (20); sylylating surface portion of said first photoresist layer (21) to form a silylation layer (23); forming a second photoresist layer (24) on said silylation layer (23); forming a second photoresist pattern (24a) by exposing and developing said second photoresist layer (24) using a photo mask (25) which is provided with the predetermined pattern; etching back said silylation layer (23) using said second photoresist pattern (24a) as an etching mask to form a silylation layer pattern (23a) while removing said second photoresist pattern (24a); oxidizing said silylation layer pattern (23a); and etching said first photoresist layer (21) using said oxidized silylation pattern as an etching mask to form a first photoresist pattern (21a).
Claim 2
Independent Claim 132 words
A method for forming a pattern comprising the steps of: forming a first photoresist layer (21) on the substrate (20); sylylating surface portion of said first photoresist layer (21) to form a silylation layer (23); forming a second photoresist layer (24) on said silylation layer (23); forming a second photoresist pattern (24a) by exposing and developing said second photoresist layer (24) using a photo mask (25) which is provided with the predetermined pattern; etching back said silylation layer (23) using said second photoresist pattern (24a) as an etching mask to form a silylation layer pattern (23a) while removing said second photoresist pattern (24a); oxidizing said silylation layer pattern (23a); and etching said first photoresist layer (21) using said oxidized silylation pattern as an etching mask to form a first photoresist pattern (21a).
Claim 3
Dependent Claim 24 words
Amethod forforming a pattern according to claim 1, wherein said first photoresist layer (21) is comprised of an organic compound which can be silylated.
Claim 4
Dependent Claim 36 words
Amethod forforming a pattern according to claim 2, wherein said first photoresist layer (21) is comprised of any one selected from the groups consisting of chemical amplification resist system, novolac based resist and polyvinylphenol based resist.
Claim 5
Dependent Claim 35 words
A method for forming a pattern according to claim 1, wherein said silylation step is performed by using as a silylating agent any one selected from the group consisting of TMDS, HMDS, ATMS, DMSDMAand Silane

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