Patent EP0585972A2 successfully refreshed from Google Patents.
EP0585972A2
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A semiconductor device and a method for the production of an insulated film used in this device
Assignee: Panasonic Holdings Corp
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Filing: 1989-12-20
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Granted: —
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Expires: 2009-12-20
Abstract
Abstract A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate. Also disclosed is a method for the production of the semiconductor device.
Inventors
- 👤 Takashi Hori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:05
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
67 words
In a semiconductor device comprising a semiconductor substrate and an insulating film disposed on said substrate, wherein said insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on said substrate, in an atmosphere of nitriding gas for a nitridation time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade.
Claim 2
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said nitride oxide film is used as a gate insulating film.
Claim 3
Dependent Claim
69 words
In a semiconductor device comprising a semiconductor substrate and an insulating film disposed on said substrate, wherein said insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on said substrate, so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 3, wherein said nitride oxide film is used as a gate insulating film.
Claim 5
Independent Claim
55 words
A method for the production of a semiconductor device comprising the steps of forming a thermal oxide film on said substrate and nitriding said thermal oxide film in an atmosphere of nitriding gas for a nitridation time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade.
Claim 6
Dependent Claim
26 words
A method for the production of a semiconductor device according to claim 5, wherein rapid heating by means of radiation is used in said nitriding step.
Claim 7
Independent Claim
63 words
A method for the production of a semiconductor device comprising the steps of forming a thermal oxide film on said substrate and nitriding said thermal oxide film in an atmosphere of nitriding gas so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate.
Claim 8
Dependent Claim
26 words
A method for the production of a semiconductor device according to claim 7, wherein rapid heating by means of radiation is used in said nitriding step.
Claim 9
Independent Claim
65 words
A method for the production of a semiconductor device comprising a semiconductor substrate comprising the steps of forming a thermal oxide film on said substrate and nitriding said thermal oxide film in an atmosphere of nitriding gas so as to have a peak nitrogen concentration of about 8 atomic % or less at the point nearest the interface between the oxynitride film and the substrate.
Claim 10
Dependent Claim
26 words
A method for the production of a semiconductor device according to claim 9, wherein rapid heating by means of radiation is used in said nitriding step.
Claim 11
Independent Claim
148 words
A method of operating a semiconductor device, the semiconductor device comprising: a semiconductor substrate (1); an insulating film (3) formed over the substrate (1); a gate electrode (5) disposed on the insulating film (3); and a drain (6) and a source (6), the drain (6) and the source (6) being formed in the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas for a nitriding time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degrees centigrade and wherein 900°C ≦ T N ≦ 1150°C; wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the nitride oxide film in the following range: 2 MV/cm ≦ E.
Claim 12
Independent Claim
151 words
A method of operating a semiconductor device, the semiconductor device comprising: a semiconductor substrate (1); an insulating film (3) formed over the substrate (1); a gate electrode (5) disposed on the insulating film (3); and a drain (6) and a source (6), the drain (6) and the source (6) being formed in the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas for a nitriding time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degrees centigrade and wherein 900°C ≦ T N ≦ 1150°C; wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the nitride oxide film in the following range: 2 MV/cm ≦ E ≦ 7 MV/cm.
Claim 13
Independent Claim
119 words
A method of operating a semiconductor device, the semiconductor device comprising a semiconductor substrate (1) and an insulating film (3) disposed on the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas for a nitriding time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degrees centigrade and wherein 900°C ≦ T N ≦ 1150°C; wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the layer in the following range: 4 MV/cm ≦ E ≦ 7 MV/cm.
Claim 14
Independent Claim
118 words
A method of operating a semiconductor device, the semiconductor device comprising a semiconductor substrate (1) and an insulating film (3) disposed on the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas so as to have a nitrogen concentration of around 8 atomic % or less, at least in the vicinity of an interface between the nitride oxide film (3) and the substrate (1); wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the layer in the following range: 2 MV/cm ≦ E.
Claim 15
Independent Claim
121 words
A method of operating a semiconductor device, the semiconductor device comprising a semiconductor substrate (1) and an insulating film (3) disposed on the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas so as to have a nitrogen concentration of around 8 atomic % or less, at least in the vicinity of an interface between the nitride oxide film (3) and the substrate (1); wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the layer in the following range: 2 MV/cm ≦ E ≦ 7 MV/cm.
Claim 16
Independent Claim
121 words
A method of operating a semiconductor device, the semiconductor device comprising a semiconductor substrate (1) and an insulating film (3) disposed on the substrate (1), the insulating film (3) being a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas so as to have a nitrogen concentration of around 8 atomic % or less, at least in the vicinity of an interface between the nitride oxide film (3) and the substrate (1); wherein the semiconductor device is operated at a gate driving voltage (V G -V T ) which gives an electric field (E) across the layer in the following range: 4 MV/cm ≦ E ≦ 7 MV/cm.
Claim 17
Dependent Claim
27 words
A method of operating a semiconductor device as claimed in claim 11, 12, 13, 14, 15 or 16 wherein the semiconductor device is operated at room temperature.
Claim 18
Dependent Claim
34 words
A method of operating a semiconductor device as claimed in claim 11, 12, 13, 14, 15 or 16 wherein the semiconductor device is operated at a temperature near to the boiling point of nitrogen.
Claim 19
Dependent Claim
113 words
A semiconductor device comprising: a semiconductor substrate (1); an insulating film (3) formed over the substrate (1); a gate electrode (5) disposed on the insulating film (3); and a drain (6) and a source (6), the drain (6) and the source (6) being formed in the substrate (1); the semiconductor device being characterized in that the insulating film (3) is a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas for a nitriding time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degrees centigrade and wherein 900°C ≦ T N ≦ 1150°C.
Claim 20
Dependent Claim
115 words
A semiconductor device comprising: a semiconductor substrate (1); an insulating film (3) formed over the substrate (1); a gate electrode (5) disposed on the insulating film (3); and a drain (6) and a source (6), the drain (6) and the source (6) being formed in the substrate (1); the semiconductor device being characterized in that the insulating film (3) is a nitride oxide film prepared by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas so as to have a nitrogen concentration of around 8 atomic % or less, at least in the vicinity of an interface between the nitride oxide film (3) and the substrate (1).
Claim 21
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film (3) on a semiconductor substrate (1); forming a gate electrode (5) on the insulating film (3); and forming a drain (6) and a source (6) in the semiconductor substrate (1); the method being characterized in that the insulating film is formed by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas for a nitriding time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degrees centigrade and wherein 900°C ≦ T N ≦ 1150°C.
Claim 22
Independent Claim
106 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film (3) on a semiconductor substrate (1); forming a gate electrode (5) on the insulating film (3); and forming a drain (6) and a source (6) in the semiconductor substrate (1); the method being characterized in that the insulating film is formed by nitriding a thermal oxide film (2) formed on the substrate (1) in an atmosphere of nitriding gas so as to have a nitrogen concentration of around 8 atomic % or less, at least in the vicinity of an interface between the nitride oxide film (3) and the substrate (1).
Claim 23
Dependent Claim
22 words
A method as claimed in claim 21 or 22, wherein rapid heating by means of radiation is used in the nitriding step.
References Cited (Backward Citations)
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