EP0578028A1
Expired / Lapsed
EP
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High frequency semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1993-06-17
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Granted: —
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Expires: 2013-06-17
Abstract
Abstract A semiconductor device includes a silicon substrate (1) on which a circuit having a predetermined function is formed and a high frequency circuit chip (6) which is mounted on the silicon substrate (1) and operates at high frequencies, and operates with functions of the silicon substrate (1) and the high frequency circuit chip (6), wherein a thin film tape having a microstrip structure including an insulating film (3), a signal line (4) on a surface of the insulating film (3) and a grounding layer (8) on a rear surface of the insulating film (3), is disposed on the silicon substrate (1), whereby the silicon substrate (1) is electrically connected to the high frequency circuit chip (6). As a result, a conventional silicon substrate is employed and a production cost is reduced.
Inventors
- 👤 Yoshihiro Mitsubishi Denki K.K. Notani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 13:09
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W70/00; H10W70/099; H10W70/60; H10W70/67; H10W70/688; H10W70/69; H10W70/698; H10W90/00; H10W90/20; H10W90/28; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/851; H10W72/874; H10W72/884; H10W74/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A semiconductor device including a silicon substrate (1) on which a circuit having a predetermined function is formed and a high frequency circuit chip (6) which is mounted on said silicon substrate (1) and operates at high frequencies, and operating with functions of said silicon substrate (1) and said high frequency circuit chip (6), wherein a thin film tape having a microstrip structure including an insulating film (3), a signal line (4) on a surface of said insulating film (3) and a grounding layer (8) on a rear surface of said insulating film (3), is disposed on said silicon substrate (1), whereby said silicon substrate (1) is electrically connected to said high frequency circuit chip (6).
Claim 2
Dependent Claim
107 words
A semiconductor device according to Claim 1, wherein an insulating layer (10) having an aperture in a predetermined region is formed between said thin film tape and said silicon substrate (1), said high frequency circuit chip (6) is encapsulated in said aperture, a surface of said thin film tape having a said signal line (4) adheres to said insulating layer (10), said signal line (4) is connected to said high frequency circuit chip (6), an aperture (100a) is formed in a region corresponding to said aperture of said insulating layer (10) and said aperture (100a) of said thin film tape is covered with a cap material (15).
Claim 3
Dependent Claim
105 words
A semiconductor device according to Claim 1, wherein a concaved part (11) is formed in the surface of said silicon substrate (1), said high frequency circuit chip (6) is encapsulated in said concaved part (11), a surface of said thin film tape having said signal line (4) adheres to said silicon substrate (1), said signal line (4) is connected to said high frequency circuit chip (6), an aperture (101a) is formed in a region of said thin film corresponding to said concaved part (11) of said silicon substrate (1) and said aperture (101a) of said thin film tape is covered with a cap material (15).
Claim 4
Dependent Claim
50 words
A semiconductor device according to Claim 2, wherein a through hole (18) is formed in said insulating film (3) constituting said thin film tape, and said grounding layer (8) of said thin film tape is connected to a grounding line (16) formed on the surface of said thin film tape.
Claim 5
Dependent Claim
50 words
A semiconductor device according to Claim 3, wherein a through hole (18) is formed in said insulating film (3) constituting said thin film tape, and said grounding layer (8) of said thin film tape is connected to a grounding line (16) formed on the surface of said thin film tape.
Claim 6
Dependent Claim
22 words
A semiconductor device according to Claim 2, wherein plastic sealing of said silicon substrate (1) including said cap (15) is carried out.
Claim 7
Dependent Claim
22 words
A semiconductor device according to Claim 3, wherein plastic sealing of said silicon substrate (1) including said cap (15) is carried out.
Claim 8
Dependent Claim
58 words
A semiconductor device according to Claim 1, wherein an aperture (102a) is formed in said thin film tape, a rear surface of said thin film tape adheres to said silicon substrate (1), said high frequency circuit chip (6) is encapsulated in said aperture (102a) and said signal line (4) is connected to said high frequency circuit chip (6).
Claim 9
Dependent Claim
32 words
A semiconductor device according to Claim 8, wherein said grounding layer (8) of said thin film tape is connected to a grounding pad (17) disposed on said silicon substrate (1) by welding.
Claim 10
Dependent Claim
30 words
A semiconductor device according to Claim 8, wherein said grounding layer (8) is connected to a grounding pad (17) disposed on said silicon substrate (1) through a conductive resin (9).
References Cited (Backward Citations)
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