Patent EP0568995A2 successfully refreshed from Google Patents.
EP0568995A2
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EP
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Semiconductor device with bumps
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1993-05-05
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Granted: —
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Expires: 2013-05-05
Abstract
Abstract The semiconductor chip (10) is provided with bumps (16) each formed by alternately building up two types of metal materials capable of forming an eutectic alloy, and, therefore, an eutectic alloy reaction takes place at each boundary surface between two layers (14, 15). The entire bump (16) fully melts in the reaction so that the semiconductor chip (10) may be securely connected on the substrate.
Inventors
- 👤 Masanori C/O Yokohama Works Of Nishiguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:20
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/01231; H10W72/01233; H10W72/01235; H10W72/01251; H10W72/01255; H10W72/221; H10W72/222; H10W72/223; H10W72/231; H10W72/234; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
63 words
A bump-formed semiconductor chip comprising: a semiconductor chip (10) in which semiconductor elements are formed; and a bump (16) electrically connected with a semiconductor element selected from said semiconductor elements; wherein said bump (16) comprises a layer (14) made of a first metal material and a layer (15) made of a second metal material capable of eutectic-reacting with said first metal material (14).
Claim 2
Dependent Claim
24 words
A bump-formed semiconductor chip according to Claim 1, further comprising a pad (11) for electrode between said semiconductor chip (10) and said bump (16).
Claim 3
Dependent Claim
37 words
A bump-formed semiconductor chip according to Claim 1 or 2, wherein said bump (16) is formed by alternately building up layers (14) made of said first metal material and layers (15) made of said second metal material.
Claim 4
Dependent Claim
34 words
A bump-formed semiconductor chip according to any of Claims 1 to 3, wherein a main component of said first metal material is Au and a main component of said second metal material is Sn.
Claim 5
Dependent Claim
77 words
A bump-formed wiring member comprising: a wiring member (21) electrically connected with a semiconductor element formed in a semiconductor chip (22), in which a desired wiring is formed of a conductor; and a bump (25a; 25b; 25c) electrically connected with said wiring; wherein said bump (25a; 25b; 25c) comprises a layer (23) made of a first metal material and a layer (24) made of a second metal material capable of eutectic-reacting with said first metal material (23).
Claim 6
Dependent Claim
28 words
A bump-formed wiring member according to Claim 5, further comprising a pad (212a; 212b; 212c) for electrode between said wiring member (21) and said bump (25a; 25b; 25c).
Claim 7
Dependent Claim
39 words
A bump-formed wiring member according to Claim 5 or 6, wherein said bump (25a; 25b; 25c) is formed by alternately building up layers (23) made of said first metal material and layers (24) made of said second metal material.
Claim 8
Dependent Claim
34 words
A bump-formed wiring member according to any of Claims 5 to 7, wherein a main component of said first metal material is Au and a main component of said second metal material is Sn.
Claim 9
Dependent Claim
21 words
A bump-formed wiring member according to any of Claims 5 to 8, wherein said wiring member is a circuit substrate (26).
Claim 10
Dependent Claim
30 words
A bump-formed wiring member according to any of Claims 5 to 8, wherein said wiring member is a tape (29) in which a desired wiring is formed of a conductor.
Claim 11
Dependent Claim
80 words
A semiconductor device comprising: a semiconductor chip (22; 27) in which semiconductor elements are formed; a bump (25a; 25b; 25c; 28) electrically connected with a semiconductor element selected from said semiconductor elements; and an external electrode (21; 26; 29) electrically connected with said bump; wherein said bump (25a; 25b; 25c; 28) comprises a layer (23) made of a first metal material and a layer (24) made of a second metal material capable of eutectic-reacting with said first metal material (23).
Claim 12
Dependent Claim
28 words
A semiconductor device according to Claim 11, further comprising a pad (221; 271) for electrode between said semiconductor chip (22; 27) and said bump (25a; 25b; 25c; 27).
Claim 13
Dependent Claim
32 words
A semiconductor device according to Claim 11 or 12, further comprising a pad (212a; 212b; 212c; 291) for electrode between said external electrode (21; 29) and said bump (25a; 25b; 25c; 27).
Claim 14
Dependent Claim
41 words
A semiconductor device according to any of Claims 11 to 13 wherein said bump (25a; 25b; 25c; 27) is formed by alternately building up layers (23) made of said first metal material and layers (24) made of said second metal material.
Claim 15
Dependent Claim
33 words
A semiconductor device according to any of Claims 11 to 14 wherein a main component of said first metal material is Au and a main component of said second metal material is Sn.
Claim 16
Dependent Claim
30 words
A semiconductor device according to any of Claims 11 to 15 wherein said external electrode is a wiring member (21) in which a desired wiring is formed of a conductor.
Claim 17
Dependent Claim
16 words
A semiconductor device according to Claim 16, wherein said wiring member is a circuit substrate (26).
Claim 18
Dependent Claim
25 words
A semiconductor device according to Claim 16, wherein said wiring member is a tape (29) in which a desired wiring is formed of a conductor.
References Cited (Backward Citations)
No citation records indexed.
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