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EP0565766A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Copper film coated substrate and method of forming copper film on substrate

Assignee: Nissin Electric Co Ltd
•
Filing: 1992-06-05
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Granted: —
•
Expires: 2012-06-05
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Abstract

Abstract A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Inventors

  • 👤 Akinori Ebe
  • 👤 Kiyoshi Ogata
  • 👤 Satoshi Nishiyama
  • 👤 Naoto Kuratani
  • 👤 Taizo Okazaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 01:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/06; C23C14/14; C23C14/20; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B29/00; C30B29/02; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24355; Y10T428/31504; Y10T428/31678; Y10T428/31681; Y10T428/31721

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 46 words
A copper film coated substrate, comprising: a substrate; and a copper film formed on a surface of said substrate, said copper film having an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of said copper film.
Claim 2
Dependent Claim 17 words
A copper film coated substrate as claimed in claim 1, wherein said substrate is an organic film.
Claim 3
Independent Claim 41 words
A method of controlling a crystal orientation of a copper thin film, comprising the steps of: irradiating a surface of a substrate with inert gas ions before forming a copper thin film on said substrate by a physical vapor deposition process.
Claim 4
Independent Claim 82 words
A method of forming a copper thin film, comprising the steps of: irradiating a surface of a substrate with ions; and depositing a copper thin film on said substrate that is irradiated with said ions in the ion irradiating step, wherein, in the ion irradiating step, an ion irradiation energy for a dosage of said irradiated ions is controlled, whereby crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of said irradiated ions.
Claim 5
Dependent Claim 34 words
A method of forming a copper thin film as claimed in claim 4, wherein said substrate is an organic film and said ions are one of H, N, O, He, Ne, Ar and Kr.

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