§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
EP0565766A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Copper film coated substrate and method of forming copper film on substrate

Assignee: Nissin Electric Co Ltd
•
Filing: 1992-06-05
•
Granted: —
•
Expires: 2012-06-05
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Inventors

  • 👤 Akinori Ebe
  • 👤 Kiyoshi Ogata
  • 👤 Satoshi Nishiyama
  • 👤 Naoto Kuratani
  • 👤 Taizo Okazaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 01:33
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/06; C23C14/14; C23C14/20; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B29/00; C30B29/02; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24355; Y10T428/31504; Y10T428/31678; Y10T428/31681; Y10T428/31721

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 46 words
A copper film coated substrate, comprising: a substrate; and a copper film formed on a surface of said substrate, said copper film having an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of said copper film.
Claim 2
Dependent Claim 17 words
A copper film coated substrate as claimed in claim 1, wherein said substrate is an organic film.
Claim 3
Independent Claim 41 words
A method of controlling a crystal orientation of a copper thin film, comprising the steps of: irradiating a surface of a substrate with inert gas ions before forming a copper thin film on said substrate by a physical vapor deposition process.
Claim 4
Independent Claim 82 words
A method of forming a copper thin film, comprising the steps of: irradiating a surface of a substrate with ions; and depositing a copper thin film on said substrate that is irradiated with said ions in the ion irradiating step, wherein, in the ion irradiating step, an ion irradiation energy for a dosage of said irradiated ions is controlled, whereby crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of said irradiated ions.
Claim 5
Dependent Claim 34 words
A method of forming a copper thin film as claimed in claim 4, wherein said substrate is an organic film and said ions are one of H, N, O, He, Ne, Ar and Kr.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag