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EP0561346A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Amplifier

Assignee: Mitsubishi Electric Corp
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Filing: 1993-03-16
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Granted: —
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Expires: 2013-03-16
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Abstract

Abstract An amplifier for amplifying a high frequency signal comprises an input matching circuit, an output matching circuit, an FET whose gate and drain are connected to the input matching circuit and the output matching circuit, respectively, and a gate voltage control circuit for controlling a gate voltage in accordance with a power of the high frequency signal, which is connected to a junction node of an output end of the input matching circuit and the gate of the FET. The gate voltage control circuit comprises a diode whose anode is connected to the gate, a capacitor disposed between a cathode of the diode and ground, and a gate bias setting circuit whose output is connected to a junction node of the diode and the capacitor. The gate bias setting circuit outputs a control voltage corresponding to a power of the high frequency signal. As the result, the matching of the output matching circuit is not deviated and a linearity of the output power to the input power is kept in a good state, resulting in an amplifier with high efficiency.

Inventors

  • 👤 Sasaki c/o Mitsubishi Denki K. K. Yoshinobu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 15:45
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/02; H03F1/0205; H03F1/0261; H03F1/0266; H03F1/30; H03F1/301; H03F1/306; H03F1/32; H03F1/3205; H03F1/3223; H03F2200/00; H03F2200/18; H03F2200/192; H03F2200/222; H03F2200/228; H03F2200/255; H03F2200/387; H03F2200/423; H03F2200/48; H03F2200/75

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 112 words
An amplifier for amplifying a high frequency signal, comprising: an input matching circuit having an input end and an output end; an output matching circuit having an input end and an output end; an FET whose gate is connected to the output end of said input matching circuit and whose drain is connected to the input end of said output matching circuit; and a gate voltage control circuit for controlling a gate voltage of said FET in accordance with a power of said high frequency signal, an output of which is connected to a junction node of the gate output end of said input matching circuit and the gate of said FET.
Claim 2
Dependent Claim 69 words
The amplifier of claim 1 wherein said gate voltage control circuit comprises a diode whose anode is connected to the gate of said FET, a capacitor disposed between a cathode of the diode and ground, and a gate bias setting circuit whose output is connected to a junction node of the diode and the capacitor, which outputs a control voltage corresponding to a power of the high frequency signal.
Claim 3
Dependent Claim 64 words
The amplifier of claim 2 wherein said gate bias setting circuit comprises a distributor for extracting a part of the power of the high frequency signal, a power detector for detecting the power extracted by the distributor, and a voltage generator for outputting a control voltage corresponding to an output of the power detector to a junction node of the diode and the capacitor.
Claim 4
Dependent Claim 16 words
The amplifier of claim 1 wherein said high frequency signal is of GHz or higher band.

References Cited (Backward Citations)

US4268797A Cited
EP0033198A1 Cited
FR2523782A1 Cited

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