Patent US4718054A successfully refreshed from Google Patents.
Patent EP0558089A2 successfully refreshed from Google Patents.
EP0558089A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor optical integrated device and method of manufacture thereof, and light receiver using said device
Assignee: Hitachi Ltd
•
Filing: 1993-02-26
•
Granted: —
•
Expires: 2013-02-26
Abstract
Abstract Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.
Inventors
- 👤 Masahiro Aoki
- 👤 Hirohisa Sano
- 👤 Shinji Sakano
- 👤 Makoto Suzuki
- 👤 Makoto Takahashi
- 👤 Kazuhisa Uomi
- 👤 Tatemi Ido
- 👤 Atsushi Takai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 16:30
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/017; G02F1/01708; B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0265; H01S5/10; H01S5/11; H01S5/20; H01S5/22; H01S5/227; H01S5/30; H01S5/34; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; G02F2203/00; G02F2203/07; H01S5/1053; H01S5/106; H01S5/2272; H01S5/3403; H01S5/3404; H01S5/343; H01S5/34306; H01S5/34313; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068; H01S5/50; H01S5/5036
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
55 words
A member comprising a substrate (2) having a plurality of quantum well structures (3) on the surface of the substrate, at least one of the plurality of quantum well structures having a lattice mismatch with the substrate and a different strain from that of at least one other of the plurality of quantum well structures.
Claim 2
Dependent Claim
43 words
A member according to claim 1, wherein at least one of the plurality of quantum well structures (3) has a different degree of lattice mismatch with the substrate from that of at least one other of the plurality of quantum well structures (3).
Claim 3
Dependent Claim
42 words
A member according to claim 1 or 2, wherein at least one of the plurality of quantum well structures (3) has a compressive strain therein and at least one of the plurality of quantum well structures (3) has a tensile strain therein.
Claim 4
Dependent Claim
45 words
A member according to any of claims 1 to 3, wherein a waveguide layer (4) is provided between each of the quantum well structures (3) and the substrate (2), each quantum well structure and its respective waveguide layer forming an optical functional section (a, b).
Claim 5
Dependent Claim
82 words
A member according to any of claims 1 to 4, wherein said quantum well structures are formed by providing insulating layer patterning marks (1) on the substrate (2), said patterning masks exposing growth regions of the substrate on which the quantum well structures are deposited, at least one of growth regions having different widths (40, 41) and/or respective patterning masks exposing different growth regions having different widths (42, 43); and simultaneously depositing material of the quantum well structures on the growth regions.
Claim 6
Dependent Claim
61 words
A member according to any of claims 1 to 5, wherein material of said quantum well structures (3) includes Group III-V compound semiconductor material with at least two Group III elements, said Group III elements including at least one Group III element having a relatively large atomic diameter and at least one Group III element having a relatively small atomic diameter.
Claim 7
Dependent Claim
66 words
A member according to any of claims 1 to 5, wherein material of said quantum well structures (3) includes Group II-VI compound semiconductor material, the II-VI compound semiconductor material including at least two Group II elements, said Group II elements including at least one Group II element having a relatively large atomic diameter and at least one Group II element having a relatively small atomic diameter.
Claim 8
Dependent Claim
88 words
A semiconductor optical integrated device comprising at least a first optical functional section (a) having a first optical waveguide structure comprising a first compound semiconductor material and a second optical functional section (b) having a second optical waveguide structure comprising a second compound semiconductor material, the first and second optical waveguide structures being provided on a same substrate (8), wherein a lattice mismatch of crystal growth films of the first optical waveguide structure differs from a lattice mismatch of crystal growth films of the second optical waveguide structure.
Claim 9
Dependent Claim
20 words
The semiconductor optical integrated device according to claim 8, wherein the first and second compound semiconductor materials have different compositions.
Claim 10
Dependent Claim
38 words
The semiconductor optical integrated device according to claim 8, wherein the first and second compound semiconductor materials are each Group III-V compound semiconductor materials, the Group III elements including In and at least one of Ga and Al.
Claim 11
Dependent Claim
44 words
The semiconductor optical integrated device according to claim 8, wherein the first and second compound semiconductor materials are each Group III-V compound semiconductor materials, the Group III elements including at least one relatively large diameter element and at least one relatively small diameter element.
Claim 12
Dependent Claim
111 words
The semiconductor optical integrated device according to any of claims 8 to 11, wherein the first and second optical waveguide structures respectively include first and second quantum well structures (101, 103; 105, 107; 109, 111; 113, 115), the first and second quantum well structures being quantum well structures formed by providing insulating layer patterning masks (10) on the substrate (8), said patterning masks exposing growth regions of the substrate on which the quantum well structures are deposited at least one of the growth regions having different widths and/or respective patterning masks, exposing different growth regions, having different widths; and simultaneously depositing material of the quantum well structures on the growth regions.
Claim 13
Dependent Claim
19 words
The semiconductor optical integrated device according to claim 12, wherein the growth regions have a width of 5-30 µm.
Claim 14
Dependent Claim
24 words
The semiconductor optical integrated device according to claim 12 or 13, wherein the insulating layer patterning masks (10) have a width of 5-60 µm.
Claim 15
Dependent Claim
40 words
The semiconductor optical integrated device according to any of claims 12 to 14, wherein at least one of the first and second optical waveguide structures includes an optical waveguide layer (11) provided between the substrate and the quantem well structure.
Claim 16
Dependent Claim
67 words
A semiconductor optical integrated device comprising at least a first optical functional section (a, b) having a first optical waveguide structure comprising a first compound semiconductor material and a second optical functional section (a, b) having a second optical waveguide structure comprising a second compound semiconductor material, wherein a strain of the first optical waveguide structure is different than a strain of the second optical waveguide structure.
Claim 17
Dependent Claim
34 words
The semiconductor optical integrated device according to claim 16, wherein the first and second optical waveguide structures respectively include first and second quantum well structures, the respective quantum well structures having the different strains.
Claim 18
Dependent Claim
30 words
The semiconductor optical integrated device according to claim 16 or 17, wherein one optical waveguide structure has a compressive strain and the other optical waveguide structure has a tensile strain.
Claim 19
Dependent Claim
29 words
The semiconductor optical integrated device according to claim 18, wherein one optical functional section forms a distributed feedback laser and the other optical functional section forms an optical modulator.
Claim 20
Dependent Claim
37 words
A semiconductor optical integrated device according to any of claims 16 to 19, wherein a gain of one optical functional section is more than 0 and that of the other optical functional section is 0 or less.
Claim 21
Dependent Claim
28 words
A semiconductor optical integrated device according to any of claims 16 to 19, wherein gains of the first and second optical functional sections are each more than 0.
Claim 22
Dependent Claim
38 words
A semiconductor optical integrated device according to any of claims 16 to 21, wherein the first optical functional section serves as an active region (19) and the second optical functional section serves as a distributed Bragg reflector (18).
Claim 23
Dependent Claim
27 words
A semiconductor optical integrated device according to any of claims 16 to 22, wherein the first and second optical functional sections serve as a semiconductor optical amplifier.
Claim 24
Dependent Claim
27 words
A semiconductor optical integrated device according to any of claims 16 to 23, wherein the first and second optical functional sections serve as semiconductor optical polarization filter.
Claim 25
Dependent Claim
111 words
A semiconductor optical integrated device, including a first optical functional section (a, b) having optical waveguide structures (101, 103; 105, 107; 109, 111; 113, 115) comprising compound semiconductors, wherein at least one of a light-gain and a light-absorption coefficient for TE polarization light is larger than at least one of a light-gain and a light-absorption coefficient for TM polarization light, at the optical waveguide structure of the first optical functional section, and at least one of the light-gain and light-absorption coefficient for TM polarization light is larger than at least one of the light-gain and light-absorption co-efficient for TE polarization light at the light waveguide structure of the second functional section.
Claim 26
Dependent Claim
116 words
An optical communication module including a semiconductor optical integrated device (21) which has a first optical functional section having an active light waveguide structure comprising a compound semiconductor for emitting light, and a second optical functional section having a passive optical waveguide structure comprising a compound semiconductor for modulating the emitted light, a strain of the active light waveguide structure being different from a strain of the passive optical waveguide structure; waveguide means (23) for guiding light outputted from the semiconductor optical integrated device to the outside; light-converging means (22) for converging the light outputted from the semiconductor optical integrated device to the waveguide means; and driving means (24) for driving the semiconductor optical integrated device.
Claim 27
Dependent Claim
96 words
An optical communication module including a semiconductor optical amplifier (21) which has a first optical functional section having a first active optical waveguide structure comprising a compound semiconductor for amplifying TE polarization light, and a second optical functional section having a second active optical waveguide structure comprising a compound semiconductor for amplifying TM polarization light and which is able to amplify the TE and TM polarization lights separately; light-converging means (22) for converging the light outputted from the semiconductor optical amplifier to the waveguide means (23); and driving means (24) for driving the semiconductor optical amplifier.
Claim 28
Dependent Claim
98 words
An optical communication system including communication means which has a semiconductor optical integrated device (25) having a first optical functional section having an active optical waveguide structure comprising a compound semiconductor, for emitting light, and a second optical functional section having a passive optical waveguide structure comprising a compound semiconductor, for modulating the emitted light, a strain of the active optical waveguide structure being different from a strain of the passive optical waveguide structure; waveguide means for guiding light outputted from the communication means to the outside; and receiving means for receiving light outputted from the waveguide means.
Claim 29
Dependent Claim
26 words
A light receiver comprising a region for selectively absorbing at least TE-mode light but transmitting TM-mode light, and a region for absorbing the transmitted TM-mode light.
Claim 30
Dependent Claim
26 words
A light receiver according to claim 29, wherein the region for selectively absorbing TE-mode light is connected in series with the region for absorbing TM-mode light.
Claim 31
Dependent Claim
25 words
A light receiver according to claim 29 or 30, wherein the region for selectively absorbing TE-mode light includes a strain-free or compressive-strain quantum well structure.
Claim 32
Dependent Claim
19 words
A light receiver according to claim 31, wherein the region for absorbing TM-mode light includes a tensile-strain absorbing structure.
Claim 33
Dependent Claim
90 words
A polarized-wave diversity light receiver for correcting a difference in output, from a light receiver (16), of electric signal intensity converted from polarized-light components of a signal light (12), said difference being caused by a difference in propagation loss and conversion efficiency of TE- and TM-mode lights, wherein an amplification degree of an electric signal amplifier at a rear stage of the light receiver is set so that a signal intensity of each polarized-light component of TE- and TM-mode signal lights, after being converted into an electric signal, is equal.
Claim 34
Independent Claim
104 words
A method of forming a semiconductor optical integrated device, comprising the steps of: providing a single substrate (2) having respective growth regions for growing thereon at least first and second waveguide structures of at least first and second optical functional sections (a, b), respectively; and growing said first and second optical waveguide structures, said growing including forming first and second crystal layers respectively of the first and second compound semiconductor materials, each having a lattice mismatch with the substrate (2), the lattice mismatch between the first crystal layer and the substrate differing from the lattice mismatch between the second crystal layer and the substrate.
Claim 35
Independent Claim
20 words
The method according to claims 34, wherein the first and second crystal layers are simultaneously formed on the semiconductor substrate.
Claim 36
Dependent Claim
21 words
The method according to claim 34 or 35, wherein the substrate includes insulating layer patterning masks (1) defining the growth regions.
Claim 37
Dependent Claim
52 words
The method according to claim 36, wherein a first insulating layer patterning mask, defining the growth region on which the first optical waveguide structure is grown, has a different width (42, 43) than a second insulating layer patterning mask, defining the growth region on which the second optical waveguide structure is formed.
Claim 38
Dependent Claim
29 words
The method according to claim 34 or 35, wherein the respective growth regions on which the first and second optical waveguide structures are grown have different widths (40, 41).
Claim 39
Dependent Claim
17 words
The method according to claim 34, wherein the crystal layers are formed by organometallic vapor phase epitaxy.
Claim 40
Dependent Claim
32 words
the method according to claim 39, wherein the organometallic vapor phase epitaxy is performed at a temperature in the range of 550-650°C, and at a pressure in the range of 20-200 Torr.
Claim 41
Dependent Claim
57 words
The method according to claim 34, wherein each of the first and second crystal layers is formed of Group III-V compound semiconductor material, the material including at least two Group III elements, one of the at least two elements having a relatively large diameter and another of the at least two elements having a relatively small diameter.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.