Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method

Claim 2

The chemical vapor deposition apparatus according to claim 1, wherein the liquid gasifying mechanism is provided with means for jetting the liquid raw material while pulverizing the liquid raw material into liquid fine particles and one or more heating members capable of gasifying said liquid fine particles to be contacted with said one or more heating members, said means for jetting the liquid raw material and said one or more heating members being positioned in the upstream side of the reaction chamber.

Claim 3

The chemical vapor deposition apparatus according to claim 1, wherein the liquid gasifying mechanism is provided with a venturi mechanism disposed in a pathway through which the carrier gas is supplied and one or more heating members, said venturi mechanism being capable of pulverizing the liquid raw material into liquid fine particles, said one or more heating members being capable of gasifying said liquid fine particles to be contacted with said one or more heating members, said venturi mechanism and said one or more heating members being positioned in the upstream side of the reaction chamber.

Claim 4

The chemical vapor deposition apparatus according to claim 3, wherein the venturi mechanism is provided with a vessel capable of storing the liquid raw material therein, said vessel being provided with means fur controlling the liquid level of the liquid raw material contained in said vessel.

Claim 5

The chemical vapor deposition apparatus according to claim 2 or claim 3, wherein the one or more healing members are one or more plates made of quartz or ceramics, said one or more plates being provided with a plurality of perforations capable of allowing a gaseous mixture comprising the liquid fine particles and the carrier gas to pass through said perforations.

Claim 6

A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material, said chemical vapor deposition method comprises: supplying said film-forming liquid raw material as it is into a liquid gasifying system comprising a mechanism capable of pulverizing said film-forming liquid raw material into liquid fine particles and gasifying said liquid fine particles while controlling the amount of said film-forming liquid raw material; simultaneously with this, supplying a carrier gas into said liquid gasifying system, wherein said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with said carrier gas to produce a film-forming raw material gas; introducing said film-forming raw material gas into a reaction chamber; and chemically reacting said film-forming raw material gas with a surface of a substrate disposed in said reaction chamber, said substrate being maintained at elevated temperature, to thereby cause the formation of a deposited film on said substrate.

Claim 7

A chemical vapor deposition method according to claim 6, wherein the film-forming liquid raw material is one or more members selected from the group consisting of organic metal compounds.

Claim 8

A chemical vapor deposition method according to claim 7, wherein the organic metal compounds are alkylaluminum hyrdides.

Claim 9

A chemical vapor deposition method according to claim 8, wherein the carrier gas includes H₂ gas.

Claim 10

A chemical vapor deposition method according to claim 9, wherein the deposited film formed on the substrate is a deposited film containing aluminum as the main constituent.

Claim 11

A chemical vapor deposition method according to claim 6, wherein the film-forming raw material gas is one or more members selected from the group consisting of organic silane compounds.

Claim 12

A chemical vapor deposition method according to claim 11, wherein the carrier gas includes O₃ gas.

Claim 13

A chemical vapor deposition method according to claim 12, wherein the deposited film formed on the substrate is a silicon oxide film.

Claim 14

A chemical vapor deposition apparatus for forming a deposited film on a substrate using a liquid raw material, said apparatus comprising a reaction chamber provided with means for evacuating the inside of said reaction chamber, said reaction being provided with means for holding said substrate in the inside thereof, and gas feed means for introducing a film-forming raw material gas produced from said liquid raw material into said reaction chamber, said gas feed means being provided with means for gasifying said liquid raw material to produce said film-forming raw material gas and means for introducing said film-forming raw material, characterized in that said gas feed means comprises a liquid supply means, a gas supply means, a liquid jetting means and a liquid gasifying mechanism; said liquid gasifying mechanism being positioned in the downstream side of said liquid supply means, said liquid jetting means being communicated with said liquid supply means; said gas supply means being being positioned in the upstream side of said liquid gasifying mechanism; said liquid gasifying mechanism being positioned in the upstream side of said reaction chamber; said liquid gasifying mechanism being provided with a plurality of heating members such that said heating members are spacedly arranged; said liquid supply means being capable of supplying said liquid raw material into said liquid gasifying mechanism while controlling the amount of said liquid raw material to be supplied and while pulverizing said liquid raw material into liquid fine particles by said liquid jetting means; said gas supply means being capable of supplying a gas into said liquid gasifying mechanism while controlling the flow rate of said gas; and said liquid gasifying mechanism being capable of gasifying said liquid fine particles of said liquid raw material introduced with the aid of said gas to produce a film-forming raw material gas and introducing said film-forming raw material gas into said reaction chamber.

Claim 15

The chemical vapor deposition apparatus according to claim 14, wherein at least one of the heating members is provided with a heat generating resistor.

Claim 16

The chemical vapor deposition apparatus according to claim 14, wherein at least one of the heating members is provided with a temperature sensor.

Claim 17

The chemical vapor deposition apparatus according to claim 14, wherein each of the heating members is provided with a plurality of perforations capable of allowing a gaseous mixture comprising the liquid fine particles of the liquid raw material and the gas to pass through said perforations such that a desired gas pressure difference can be maintained between the upstream side and the down stream side of the heating plate.

Claim 18

The chemical vapor deposition apparatus according to claim 17, wherein each of the heating members is different with respect to the size of the perforations.

Claim 19

A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material, said chemical vapor deposition method comprises: supplying said film-forming liquid raw material as it is while regulating the amount into a liquid gasifying system comprising a liquid pulverizing mechanism and a liquid gasifying mechanism provided with a plurality of heating members respectively having a plurality of perforations; simultaneously with this, supplying a gas into said liquid gasifying system while controlling the flow rate, wherein said film-forming liquid raw material is pulverizing into liquid fine particles and said liquid fine particles are heated together with said gas while being passed through said perforations of said plurality of heating members to produce a film-forming raw material gas; introducing said film forming raw material gas into a reaction chamber; and chemically reacting said film-forming raw material gas with a surface of a substrate disposed in said reaction chamber, said substrate being maintained at elevated temperature, to thereby cause the formation of a deposited film on said substrate.

Claim 20

A chemical vapor deposition method according to claim 19, wherein at least one of the plurality of heating members is provided with a heat generating resistor.

Claim 21

A chemical vapor deposition method according to claim 19, wherein said chemical vapor deposition method is conducted so as to satisfy the equation: T₁ < T₂ < T₃, with T₁ being a temperature of the film-forming liquid raw material upon supplying into the liquid gasifying system, T₂ being a temperature of the heating member upon gasifying the liquid fine particles, and T₃ being a temperature of the substrate upon film formation.

Claim 22

A chemical vapor deposition method according to claim 19, wherein the film-forming liquid raw material is one or more members selected from the group consisting of organic metal compounds.

Claim 23

A chemical vapor deposition method according to claim 22, wherein the organic metal compounds are alkylaluminum hyrdides.

Claim 24

A chemical vapor deposition method according to claim 22, wherein the gas includes H₂ gas.

Claim 25

A chemical vapor deposition method according to claim 24, wherein the deposited film formed on the substrate is a deposited film containing aluminum as the main constituent.

Claim 26

A chemical vapor deposition method according to claim 19, wherein the film-forming raw material gas is one or more members selected from the group consisting of organic silane compounds.

Claim 27

A chemical vapor deposition method according to claim 26, wherein the gag includes O₃ gas.

Claim 28

A chemical vapor deposition method according to claim 27, wherein the deposited film formed on the substrate is a silicon oxide film.