Patent EP0544648A2 successfully refreshed from Google Patents.
EP0544648A2
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Method for forming a planarized Al thin film
Assignee: NTT Inc
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Filing: 1986-05-12
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Granted: —
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Expires: 2006-05-12
Abstract
Abstract Charged particles are irradiated over a (Al) thin film (32') formed on a convex and concave surface (31,34) of a substrate (2) or over a thin film (32) being formed on a convex and concave surface (31,34) of a substrate (2). During the irradiation, raise in temperature of the thin film (32') and impingement of charged particles cause the fludization of the thin film (32'), so that a planarized thin film (32') is formed within a short period of time.
Inventors
- 👤 Kazuyoshi Kamoshida
- 👤 Hiroaki Nakamura
- 👤 Takao Amazawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:45
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P95/04; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
127 words
A method of forming a planarized aluminum thin film comprising the steps of: forming an aluminum thin film by sputtering on a substrate having a non-planarized surface; and irradiating charged particles of a plasma accelerated by a bias voltage having an absolute value of higher than 850 volts and lower than a voltage, at which said aluminum thin film reaches a temperature at which the aluminum thin film starts to melt, over the entire surface of said aluminum thin film so that said aluminum thin film is fluidized by a temperature rise of said aluminum thin film and bombardment of said aluminum thin film with said charged particles, and said temperature of said aluminum thin film being less than the melting point of said aluminum thin film.
Claim 2
Dependent Claim
61 words
A method of forming a planarized aluminum thin film as claimed in claim 1, characterized in that after the formation of said aluminum thin film on said substrate having the non-planarized surface, said charged particles are irradiated on said aluminum thin film after said substrate has been heated from the exterior or while said substrate is being heated from the exterior.
References Cited (Backward Citations)
No citation records indexed.
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