Patent FR389097A successfully refreshed from Google Patents.
Patent EP0544329A2 successfully refreshed from Google Patents.
EP0544329A2
Expired / Lapsed
EP
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Semiconductor package
Assignee: Toshiba Corp
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Filing: 1992-11-27
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Granted: —
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Expires: 2012-11-27
Abstract
Abstract A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitrile substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 mu m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
Inventors
- 👤 Mitsuyoshi C/O Int. Prop. Div.Of K.K.Toshiba Endo
- 👤 Hironori C/O Int. Prop. Div. Of K.K.Toshiba Asai
- 👤 Keiichi C/O Int. Prop. Div.Of K.K. Toshiba Yano
- 👤 Yoshitoshi C/O Int.Prop.Div.Of K.K. Toshiba Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 05:39
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/62; H10W70/63; H10W70/635; H10W40/00; H10W40/20; H10W40/22; H10W40/25; H10W40/259; H10W70/65; H10W70/685; H10W70/69; H10W70/692; H10W74/00; H10W74/10; H10W74/131; H10W74/40; H10W74/43; H10W76/00; H10W76/60; H10W70/654; H10W70/655; H10W70/682; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
87 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to one surface of said aluminum nitride substrate through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer being a metallic layer.
Claim 2
Dependent Claim
87 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to one surface of said aluminum nitride substrate through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer being a metallic layer.
Claim 3
Dependent Claim
16 words
A semiconductor package according to claim 1, wherein said metallic layer is an Au-Sn alloy layer.
Claim 4
Dependent Claim
96 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to one surface of said aluminum nitride substrate through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer being a glass layer having a thickness of not more than 100 /.Lm.
Claim 5
Dependent Claim
96 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to one surface of said aluminum nitride substrate through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer being a glass layer having a thickness of not more than 100 /.Lm.
Claim 6
Dependent Claim
28 words
A semiconductor package according to claim 1 or claim 3, wherein said ceramic sealing member has a cross section of the shape of three sides of a rectangle.
Claim 7
Dependent Claim
25 words
A semiconductor package according to claim 1 or claim 3, wherein said aluminum nitrile substrate having said semiconductor element mounted thereon is a flat-surfaced substrate.
Claim 8
Dependent Claim
20 words
A semiconductor package according to claim 1 or claim 3, wherein said ceramic sealing member is formed of aluminum nitride.
Claim 9
Dependent Claim
100 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 10
Dependent Claim
100 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 11
Dependent Claim
17 words
A semiconductor package according to claim 7, wherein said sealing member is formed of a ceramic material.
Claim 12
Dependent Claim
16 words
A semiconductor package according to claim 8, wherein said sealing member is formed of aluminum nitride.
Claim 13
Dependent Claim
110 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the distance from the external edge of said aluminum nitride substrate to said connecting terminals being larger than the intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 14
Dependent Claim
110 words
A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the distance from the external edge of said aluminum nitride substrate to said connecting terminals being larger than the intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element.
Claim 15
Dependent Claim
106 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted thereon and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer.
Claim 16
Dependent Claim
106 words
A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted thereon and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer.
Claim 17
Dependent Claim
37 words
A semiconductor package according to claim 11, wherein the thickness of said aluminum nitride heat-conducting layers containing no internal wiring layer is greater than the thickness of said aluminum nitride wiring layer provided with said internal wiring.
Claim 18
Dependent Claim
123 words
A semiconductor package comprising an aluminum multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitrile multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer.
Claim 19
Dependent Claim
123 words
A semiconductor package comprising an aluminum multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitrile multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer.
Claim 20
Dependent Claim
41 words
A semiconductor package according to claim 13, wherein said surface signal wiring layer is provided in one terminal part thereof with a connecting pad and said via holes are disposed along the opposite sides of a row of said connecting pads.
Claim 21
Dependent Claim
30 words
A semiconductor package according to claim 13, wherein the length of said surface signal wiring layer is not more than 1/4 of the total length of all the signal wirings.
References Cited (Backward Citations)
No citation records indexed.
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