Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
110 words
A process for fabricating a semiconductor metal-oxide semiconductor device including: (a) forming a gate oxide on a surface of a semi-conductor substrate; (b) forming a metal gate thereon; (c) patterning said gate oxide and said metal gate to expose portions of said semiconductor for forming source and drain regions therein; (d) forming a thin film over at least said metal gate and said exposed portions; (e) implanting a dopant through said thin film into said substrate to form said source and drain regions; and (f) either prior to step (d) or subsequent thereto, introducing a dopant into said sub - strate adjacent said gate to form lightly doped drain regions.
Claim 2
Dependent Claim
110 words
A process for fabricating a semiconductor metal-oxide semiconductor device including: (a) forming a gate oxide on a surface of a semi-conductor substrate; (b) forming a metal gate thereon; (c) patterning said gate oxide and said metal gate to expose portions of said semiconductor for forming source and drain regions therein; (d) forming a thin film over at least said metal gate and said exposed portions; (e) implanting a dopant through said thin film into said substrate to form said source and drain regions; and (f) either prior to step (d) or subsequent thereto, introducing a dopant into said sub - strate adjacent said gate to form lightly doped drain regions.
Claim 3
Dependent Claim
27 words
The process of Claim 1 wherein said thin film ranges in thickness from about 500 to 2,000 A and is chosen to meet predetermined spacer width requirements.
Claim 4
Dependent Claim
21 words
The process of Claim 2 wherein said dopant is introduced into said substrate to form said lightly doped regions by implantation.
Claim 5
Dependent Claim
37 words
The process of Claim 3 wherein said dopant implanting is carried out at an energy such that the implant peak is just below the interface formed between said silicon surface and said thin film, inside said substrate.
Claim 6
Dependent Claim
14 words
The process of Claim 1 wherein said thin film consists essentially of an oxide.
Claim 7
Dependent Claim
15 words
The process of Claim 5 wherein said thin film includes a species capable of diffusion.
Claim 8
Dependent Claim
26 words
The process of Claim 6 wherein said thin film consists essentially of a phosphorus-containing glass and wherein said species capable of diffusion consists essentially of phosphorus.
Claim 9
Dependent Claim
31 words
The process of Claim 7 wherein said dopant is introduced into said substrate to form said lightly doped regions by diffusion of phosphorus at an elevated temperature subsequent to step (d).
Claim 10
Dependent Claim
55 words
The process of Claim 1 wherein said thin film consists essentially of a material selected from the group consisting of polysilicon, silicon nitride, and metal and wherein a thermal oxi - dation step is performed prior to depositing said thin film and wherein said thin film is removed following implantation of said source and drain.
Claim 11
Dependent Claim
32 words
The process of Claim 1 further including forming openings in said thin film to expose portions of said source and drain regions in said semiconductor substrate and forming metal silicide contacts thereto.
Claim 12
Dependent Claim
14 words
The process of Claim 10 wherein said metal silicide consist essentially of titanium silicide.
Claim 13
Dependent Claim
23 words
The process of Claim 1 wherein said metal gate comprises a first layer of polysilicon and a second layer of a metal silicide.
Claim 14
Dependent Claim
14 words
The process of Claim 12 wherein said metal silicide consists essentially of tungsten silicide.