Patent EP0538010A2 successfully refreshed from Google Patents.
EP0538010A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor package, a holder, a method of production and testing for the same
Assignee: Kyushu Fujitsu Electronics Ltd
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Filing: 1992-10-14
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Granted: —
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Expires: 2012-10-14
Abstract
Abstract A semiconductor device comprises a plurality of leads (225) respectively made up of an inner lead (5, 93a, 225a) and an outer lead (8, 93b, 225b), a semiconductor chip (4, 223) electrically connected to the inner leads of the leads, and a package (7, 221) encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package. The package (7, 221) has an upper part (7a, 221a) and a lower part (7b, 221b) which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and each of the outer leads (8, 93b) have a wide part (21) which is wider than other parts of the outer lead extending outwardly of the package only within the stepped part of the package.
Inventors
- 👤 Junichi C/O Fujitsu Limited Kasai
- 👤 Kazuto C/O Fujitsu Limited Tsuji
- 👤 Norio C/O Fujitsu Limited Taniguchi
- 👤 Yoshiyuki C/O Fujitsu Limited Yoneda
- 👤 Masashi C/O Fujitsu Limited Takenaka
- 👤 Takashi C/O Fujitsu Automation Limited Mashiko
- 👤 Masao C/O Fujitsu Automation Limited Sakuma
- 👤 Yukio c/o KYUSHO FUJITSU ELECTRONICS LTD Saigo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 20:16
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/04; G01R1/0408; G01R1/0433; H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10P74/00; H10P74/27; H10P74/273; H10W; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W70/00; H10W70/40; H10W70/421; H10W70/424; H10W70/427; H10W70/429; H10W70/453; H10W70/464; H10W74/00; H10W74/01; H10W74/016; H10W74/10; H10W74/111; H10P72/741; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/721; H10W90/726; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
146 words
A semiconductor device comprising a plurality of leads (225) respectively made up of an inner lead (5, 93a, 225a) and an outer lead (8, 93b, 225b) ; a semiconductor chip (4, 223) electrically connected to the inner leads of said leads; and a package (7, 221) encapsulating at least the inner leads of said leads and said semiconductor chip so that the outer leads extend outwardly of said package, characterized in that said package (7) has an upper part (7a, 221a) and a lower part (7b, 221b) which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, and that each of said outer leads (8) have a wide part (21) which is wider than other parts of the outer lead extending outwardly of said package (7) only within the stepped part of said package.
Claim 2
Dependent Claim
31 words
The semiconductor device as claimed in claim 1, characterized in that there are further provided projections (16) integrally provided on the stepped part on both sides of each outer lead (8).
Claim 3
Dependent Claim
57 words
The semiconductor device as claimed in claim 1 or 2, characterized in that each outer lead (8) has an exposed surface (8a) which is exposed at the stepped part, and surfaces of each outer lead (8) other than the exposed surface are embedded in one of the upper and lower parts (7a, 7b) at the stepped part.
Claim 4
Dependent Claim
31 words
The semiconductor device as claimed in any of claims 1 to 3, characterized in that each outer lead (8) has a length of at least 400 µm at the stepped part.
Claim 5
Dependent Claim
33 words
The semiconductor device as claimed in any of claims 1 to 4, characterized in that the wide parts (21) of the outer leads are arranged in a zigzag pattern within the stepped part.
Claim 6
Dependent Claim
70 words
The semiconductor device as claimed in any of claims 1 to 5, characterized in that said leads are formed by a lead frame (2) having a stage (3) at a central part thereof, said semiconductor chip (4) is mounted on the stage (3) of the lead frame (2), and the semiconductor device further comprises a plurality of wires (6) which bond the semiconductor chip (4) to the inner leads (5).
Claim 7
Dependent Claim
46 words
The semiconductor device as claimed in any of claims 1 to 5, characterized in that said leads are formed on a tape carrier (91), and the semiconductor device further comprises a plurality of bumps (96) which bond the semiconductor chip (4) to the inner leads (93a).
Claim 8
Dependent Claim
29 words
The semiconductor device as claimed in any of claims 1 to 7, characterized in that the outer leads (8) curve towards the upper part (7a) of said package (7).
Claim 9
Dependent Claim
35 words
The semiconductor device as claimed in claim 8, characterized in that the outer leads (8) have a curved shape selected from a group consisting of an approximate L-shape, an approximate S-shape and a gull-wing shape.
Claim 10
Dependent Claim
29 words
The semiconductor device as claimed in any of claims 1 to 7, characterized in that the outer leads (8) curve towards the lower part (7b) of said package (7).
Claim 11
Dependent Claim
35 words
The semiconductor device as claimed in claim 10, characterized in that the outer leads (8) have a curved shape selected from a group consisting of an approximate L-shape, an approximate S-shape and a gull-wing shape.
Claim 12
Dependent Claim
74 words
The semiconductor device as claimed in any of claims 1 to 11, characterized in that there is further provided a radiator member (97a-97d) provided on a smaller one of the upper and lower parts (7a, 7b) of the package (7) so as to improve thermal conduction of heat generated from said semiconductor chip (4), said radiator member (97a-97d) being made of a material having a thermal conductivity higher than that of said package (7).
Claim 13
Dependent Claim
34 words
The semiconductor device as claimed in claim 12, characterized in that said radiator member (97a, 97b) is embedded in the smaller one of the upper and lower parts (7a, 7b) of the package (7).
Claim 14
Dependent Claim
34 words
The semiconductor device as claimed in claim 12, characterized in that said radiator member (97a-97d) forms a part of the smaller one of the upper and lower parts (7a, 7b) of the package (7).
Claim 15
Dependent Claim
62 words
The semiconductor device as claimed in any of claims 1 to 11, characterized in that there is further provided a radiator member (222) provided on the stepped part so as to improve thermal conduction of heat generated from said semiconductor chip (223), said radiator member (222) being made of a material having a thermal conductivity higher than that of said package (221).
Claim 16
Dependent Claim
60 words
The semiconductor device as claimed in claim 15, characterized in that said radiator member (222) has a hole (230) which matches the size of a smaller one of the upper and lower parts (221a, 221b) of said package (221) so that a surface of the smaller part exposed through the hole (230) matches a surface of said radiator member (222).
Claim 17
Dependent Claim
33 words
The semiconductor device as claimed in claim 15 or 16, characterized in that said radiator member (222) is adhered to the outer leads (225b) at the stepped part by an adhesive agent (231).
Claim 18
Dependent Claim
21 words
The semiconductor device as claimed in claim 17, characterized in that the adhesive agent (231) is made of an insulating material.
Claim 19
Dependent Claim
111 words
The semiconductor device as claimed in any of claims 15 to 18, characterized in that said leads (225) are formed by a lead frame (226) having a stage at a central part thereof and support bars (233) for supporting the stage, said semiconductor chip (223) is mounted on the stage of the lead frame (226), said support bars (233) extend outwardly of said package (221) at the stepped part, said radiator member (222) is adhered to the outer leads (225b) and the support bars (233) at the stepped part, and the semiconductor device further comprises a plurality of wires (227) which bond the semiconductor chip (223) to the inner leads (225a).
Claim 20
Dependent Claim
31 words
The semiconductor device as claimed in claim 1, characterized in that the inner leads of said leads (93) overlap a part of said semiconductor chip (4) to make electrical contact therewith.
Claim 21
Dependent Claim
31 words
The semiconductor device as claimed in claim 20, characterized in that there are further provided bumps (96) which bond the inner leads of said leads (93) to said semiconductor chip (4).
Claim 22
Dependent Claim
201 words
A carrier for carrying a semiconductor device (1A-1H) which comprises a plurality of leads respectively made up of an inner lead (5, 93a) and an outer lead (8, 93b), a semiconductor chip (4) electrically connected to the inner leads of the leads, and a generally rectangular package (7) encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package, said package (7) having an upper part (7a) and a lower part (7b) which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, each of said outer leads (8, 93b) having a part (8a) which is exposed at the stepped part of the package, characterized in that said carrier comprises: a sidewall part (42) which has a hollow rectangular column shape which opens to top and bottom thereof; and locking parts (43a-43d, 44a-44d) provided on said sidewall part for locking at least corners of the stepped part of the semiconductor device (1A-1H) which is accommodated within the sidewall part (42), said sidewall part (42) surrounding sides of the semiconductor device (1A-1H) to protect the outer leads (8, 93b).
Claim 23
Dependent Claim
35 words
The carrier as claimed in claim 22, characterized in that said locking parts (43a-43d, 44a-44d) respectively include a pushing claw (44a-44d) for pushing against the corner of the stepped part of the semiconductor device (1A-1H).
Claim 24
Dependent Claim
52 words
The carrier as claimed in claim 22 or 23, characterized in that at least a part of each side of a larger one of the upper and lower parts (7a, 7b) of the package (7) of the semiconductor device (1A-1H) is exposed via the top or bottom of said sidewall part (42).
Claim 25
Dependent Claim
43 words
The carrier as claimed in claim 22 or 23, characterized in that at least the exposed part (8a) of each of the outer leads (8, 93b) of the semiconductor device (1A-1H) is exposed via the top or bottom of said sidewall part (42).
Claim 26
Dependent Claim
69 words
The carrier as claimed in any of claims 22 to 25, characterized in that there are further provided first engaging means (45a-45d) provided at an upper end of said sidewall part (42) and second engaging means (46a-46d) provided at a lower end of said sidewall part (42), said first and second engaging means (45a-45d, 46a-46d) having corresponding engageable configurations so that one carrier can be stacked on another carrier.
Claim 27
Independent Claim
227 words
A method of testing a semiconductor device (1A-1H) which comprises a plurality of leads respectively made up of an inner lead (5, 93a) and an outer lead (8, 93b), a semiconductor chip (4) electrically connected to the inner leads (5, 93a) of the leads, and a generally rectangular package (7) encapsulating at least the inner leads (5, 93a) of the leads and the semiconductor chip (4) so that the outer leads (8, 93b) extend outwardly of the package (7), said package (7) having an upper part (7a) and a lower part (7b) which have mutually different sizes such that a stepped part is formed between the upper and lower parts (7a, 7b) by the different sizes, each of said outer leads (8, 93b) having a part (8a) which is exposed at the stepped part of the package (7), characterized in that said method comprises the steps of: (a) placing the semiconductor device (1A-1H) in a testing position on a socket (14, 61, 61A) so that probes (15, 66) of the socket make contact with corresponding outer leads (8, 93b) which are exposed at the stepped part of the package of the semiconductor device; and (b) checking performance of the semiconductor device (1A-1H) by supplying signals from a testing equipment (13) to the outer leads (8, 93b) via the probes (15, 66) of the socket (14, 61, 61A).
Claim 28
Dependent Claim
62 words
The method of testing the semiconductor device as claimed in claim 27, characterized in that said step (a) places the semiconductor device (1A-1H) on the socket (14, 61, 61A) so that in the testing position the stepped part and a smaller one of the upper and lower parts (7a, 7b) of the package (7) are supported by the socket (14, 61, 61A).
Claim 29
Dependent Claim
112 words
The method of testing the semiconductor device as claimed in claim 27, characterized in that said step (a) accommodates the semiconductor device (1A-1H) within a carrier (41, 41A) when placing the semiconductor device in the testing position on the socket (61, 61A), said carrier (41, 41A) comprising a sidewall part (42) which has a hollow rectangular column shape which opens to top and bottom thereof and locking parts (43a-43d, 44a-44d) provided on the sidewall part for locking at least corners of the stepped part of the semiconductor device (1A-1H) which is accommodated within the sidewall part, said sidewall part surrounding sides of the semiconductor device to protect the outer leads (8, 93b).
Claim 30
Dependent Claim
56 words
The method of testing the semiconductor device as claimed in claim 29, characterized in that said step (a) positions the semiconductor device (1A-1H) relative to the socket (61, 61A) by pushing against a larger one of the upper and lower parts (7a, 7b) of the package (7) by a lid (67) of the socket (61, 61A).
Claim 31
Independent Claim
91 words
The method of testing the semiconductor device as claimed in any of claims 27 to 30, characterized in that each of said outer leads (8, 93b) have a wide part (21) which is wider than other parts of the outer lead extending outwardly of the package (7) only within the stepped part of the package, and said step (a) places the semiconductor device (1A-1H) in the testing position on the socket (14, 61, 61A) so that each probe (15, 66) contacts the wide part (21) of each outer lead (8, 93b).
Claim 32
Independent Claim
182 words
A method of producing a semiconductor device (1A-1H) which comprises a plurality of leads respectively made up of an inner lead (5, 93a) and an outer lead (8, 93b), a semiconductor chip (4) electrically connected to the inner leads of the leads, and a generally rectangular package (7) encapsulating at least the inner leads of the leads and the semiconductor chip so that the outer leads extend outwardly of the package, said package (7) having an upper part (7a) and a lower part (7b) which have mutually different sizes such that a stepped part is formed between the upper and lower parts by the different sizes, each of said outer leads having a part which is exposed at the stepped part of the package, characterized in that said method comprises the steps of: (a) placing the semiconductor device (1A-1H) on a support (84, 85) so that the semiconductor device is supported by the stepped part and a smaller one of the upper and lower parts (7a, 7b) of the package (7); and (b) plating a metal on the outer leads (8, 93b).
Claim 33
Dependent Claim
26 words
The method of producing the semiconductor device as claimed in claim 32, characterized in that said step (b) carries out one of electroplating and electroless plating.
Claim 34
Dependent Claim
95 words
The method of producing the semiconductor device as claimed in claim 32, characterized in that said step (a) places the semiconductor device (1A-1H) on the support (84, 85) within a plating tank (81) which is filled with a plating liquid (82) so that the outer leads (8, 93b) exposed at the stepped part make contact with a first electrode (84) which forms the support, said first electrode (84) being coupled to a second electrode (83) which is within the plating tank (81) via a power source (86), and said step (b) carries out an electroplating.
Claim 35
Independent Claim
40 words
The method of producing the semiconductor device as claimed in any of claims 32 to 34, characterized in that there is further provided the step (c) of plating the outer leads (8, 93b) prior to said steps (a) and (b).
Claim 36
Independent Claim
47 words
The method of producing the semiconductor device as claimed in any of claims 32 to 34, characterized in that there is further provided the step (c) of carrying out a pre-plating process with respect to the outer leads (8, 93b) prior to said steps (a) and (b).
Claim 37
Dependent Claim
113 words
The method of producing the semiconductor device as claimed in claim 32, characterized in that there is further provided the step (c) of accommodating the semiconductor device (1A-1H) within a carrier (41, 41A) when placing the semiconductor device on the support (84, 85), said carrier (41, 41A) comprising a sidewall part (42) which has a hollow rectangular column shape which opens to top and bottom thereof and locking parts (43a-43d, 44a-44d) provided on the sidewall part for locking at least corners of the stepped part of the semiconductor device which is accommodated within the sidewall part, said sidewall part (42) surrounding sides of the semiconductor device to protect the outer leads (8, 43b).
Claim 38
Dependent Claim
100 words
The method of producing the semiconductor device as claimed in claim 37, characterized in that said step (a) places the carrier (41, 41A) accommodating the semiconductor device (1A-1H) on the support (84, 85) within a plating tank (81) which is filled with a plating liquid (82) so that the outer leads (8, 93b) exposed at the stepped part make contact with a first electrode (84) which forms the support, said first electrode (84) being coupled to a second electrode (83) which is within the plating tank (81) via a power source (86), and said step (b) carries out an electroplating.
Claim 39
Independent Claim
44 words
The method of producing the semiconductor device as claimed in any of claims 32 to 38, characterized in that there is further provided the step of (c) cutting off unwanted parts of the outer leads (8, 93b) prior to said steps (a) and (b).
Claim 40
Independent Claim
226 words
A method of producing a semiconductor device comprising the steps of: (a) placing a semi-completed device having leads in a molding position within a cavity (123) which is formed by first and second dies (120b, 120a) which connect via a palette (121), said cavity (123) being formed by a recess (123a) of the first die (120b) and an opening (123b) of the palette (121), said first die (120b) having a first gate (124) which communicates to the recess (123a), said palette (121) having a second gate (126) which communicates to the opening (123b), at least one of the first die (120b) and the palette (121) having a runner (122) which communicates with the first and second gates (124, 126) ; and (b) injecting a resin into the cavity (123) via the runner (122) and the first and second gates (124, 126) to mold a resin package (7) which encapsulates the semi-completed device so that the leads (8, 93b) extend outwardly from the resin package, said recess (123a) being larger than the opening (123b) so that one half (7a) of the package (7) above the leads (8, 93b) is larger than the remaining half (7b) of the package (7) below the leads and the leads are exposed at a stepped part which is formed by a difference between the sizes of the two halves forming the package.
Claim 41
Dependent Claim
38 words
The method of producing the semiconductor device as claimed in claim 40, characterized in that said step (b) injects the resin from the runner (122) to the second gate (126) via a hole (127) in the palette (121).
Claim 42
Dependent Claim
33 words
The method of producing the semiconductor device as claimed in claim 40, characterized in that said step (b) injects the resin from the runner (122) which is formed in only the palette (121).
Claim 43
Dependent Claim
34 words
The method of producing the semiconductor device as claimed in claim 40, characterized in that said step (b) injects the resin from the runner (122) which is formed in only the first die (120b).
References Cited (Backward Citations)
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