Patent EP0536664A1 successfully refreshed from Google Patents.
EP0536664A1
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A method for forming a thin film
Assignee: Tokyo Electron Ltd
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Filing: 1992-10-05
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Granted: —
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Expires: 2012-10-05
Abstract
Abstract In order to decompose TiCℓ₄ to Ti and Cℓ completely, extremely high energy of more than 400kcaℓ moℓ⁻¹ is required. In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000°C, and more, to form a Tifilm with good step coverage even in a fine contact hole.
Inventors
- 👤 Takashi Akahori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H10; H10P; H10P95/00; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/06; C23C16/08; C23C16/14; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/511; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
35 words
A method for forming a thin film by magnetic enhanced plasma CVD method, wherein TiCℓ₄ and H₂, or TiCℓ₄, H₂ and Ar gases are used so as to form a Ti film on a substrate.
Claim 2
Independent Claim
55 words
A method for forming a thin film by magnetic enhanced plasma CVD method, wherein TiCℓ₄, H₂ and N₂, or TiCℓ₄, H₂, N₂ and Ar gases are used at less than 0.5 of N₂ flow rate to TiCℓ₄ so as to form a Ti rich TiN film (Ti x N y , x>y) on a substrate.
Claim 3
Independent Claim
31 words
A method for forming a thin film according to Claims 1 or 2, wherein at the substrate temperature of less than 500°C, a Ti or Ti rich TiN film is formed.
Claim 4
Dependent Claim
62 words
A method for forming a thin film, comprising the steps of forming a Ti film by the method according to Claim 1, and then forming a TiN film on the substrate by the magnetic enhanced plasma CVD method, wherein TiCℓ₄, H₂ and N₂, or TiCℓ₄, H₂, N₂, and Ar gases are used at more than 0.5 of N₂ flow rate to TiCℓ₄.
Claim 5
Dependent Claim
64 words
A method for forming a thin film, comprising the steps of forming a Ti rich TiN film by the method according to Claim 2, and then forming a TiN film on the substrate by the magnetic enhanced plasma CVD method, wherein TiCℓ₄, H₂ and N₂, or TiCℓ₄, H₂, N₂ and Ar gases are used at more than 0.5 of N₂ flow rate to TiCℓ₄.
Claim 6
Dependent Claim
67 words
A method for forming a thin film, comprising the steps of forming a Ti or Ti rich TiN film by the method according to Claim 3, and then forming a TiN film on the substrate by the the magnetic enhanced plasma CVD method, wherein TiCℓ₄, H₂ and N₂, or TiCℓ₄, H₂, N₂ and Ar gases are used at more than 0.5 of N₂ flow rate to TiCℓ₄.
Claim 7
Dependent Claim
53 words
A method for forming a thin film according to Claim 4, wherein the steps of forming a Ti film and a TiN film are carried out in the continuous plasma by changing gas sorts and / or the gas flow rate, so as to form a double layer film on the substrate successively.
Claim 8
Dependent Claim
55 words
A method for forming a thin film according to Claim 5, wherein the steps of forming a Ti rich TiN film and a TiN film are carried out in the continuous plasma by changing gas sorts and / or the gas flow rate, so as to form a double layer film on the substrate successively.
Claim 9
Dependent Claim
57 words
A method for forming a thin film according to Claim 6, wherein the steps of forming a Ti or Ti rich TiN film and a TiN film are carried out in the continuous plasma by changing gas sorts and / or the gas flow rate, so as to form a double layer film on the substrate successively.
Claim 10
Dependent Claim
43 words
A method for forming a thin film according to Claim 4, comprising the steps of forming a Ti film on a substrate in a chamber, and then conveying said substrate in a vacuum to another chamber, where a TiN film is formed thereon.
Claim 11
Dependent Claim
45 words
A method for forming a thin film according to Claim 5, comprising the steps of forming a Ti rich TiN film on a substrate in a chamber, and then conveying said substrate in a vacuum to another chamber, where a TiN film is formed thereon.
Claim 12
Dependent Claim
47 words
A method for forming a thin film according to Claim 6, comprising the steps of forming a Ti or Ti rich TiN film on a substrate in a chamber, and then conveying said substrate in a vacuum to another chamber, where a TiN film is formed thereon.
Claim 13
Dependent Claim
38 words
A method for forming a thin film, comprising the steps of forming a Ti or Ti rich TiN film by the method according to Claim 3, and then applying thermal treatment of more than 500°C to said substrate.
Claim 14
Independent Claim
58 words
A method for forming a thin film according to Claims 10 or 11, comprising the steps of forming a Ti or Ti rich TiN film at the substrate temperature of less than 500°C, and then in the middle of transition in vacuum of said substrate to another chamber, applying thermal treatment of more than 500°C to said substrate.
Claim 15
Independent Claim
69 words
A method for forming a thin film, comprising the steps of forming a Ti or Ti rich TiN film and a TiN film on a substrate at temperature of less than 500°C by the method according to Claims 4, 5, 7, 8, 10 or 11, and then conveying said substrate in a vacuum to an anneal chamber, where thermal treatment of more than 500°C is applied to said substrate.
Claim 16
Independent Claim
56 words
A system for forming a thin film used for the method according to Claims 10 or 11, having a chamber for forming a Ti or Ti rich TiN film on a substrate, another chamber for forming a TiN film additionally thereon, and a vacuum transition path for conveying said substrate in a vacuum between said chambers.
Claim 17
Independent Claim
28 words
A method for forming a thin film according to Claims 1 to 15, wherein plasma cleaning is carried out before forming a Ti or Ti rich TiN film.
Claim 18
Dependent Claim
29 words
A method for forming a thin film according to Claim 17, wherein plasma cleaning is carried out in a chamber for forming a Ti or Ti rich TiN film.
Claim 19
Dependent Claim
45 words
A system for forming a thin film used for the method according to Claim 17, having a chamber for plasma cleaning, another chamber for forming a Ti or Ti rich TiN film, and a vacuum transition path for transition in a vacuum between said chambers.
Claim 20
Independent Claim
42 words
A method for forming a thin film according to Claims 1 to 15, wherein a substrate is irradiated with H₂ plasma, orH₂ and Ar plasma before one of a Ti film, a Ti rich TiN film and a TiN film is formed.
Claim 21
Dependent Claim
60 words
A method for forming a thin film according to Claim 20, wherein the steps of irradiating a substrate with H₂ plasma, or H₂ and Ar plasma, and forming one of a Ti film, a Ti rich TiN film and a TiN film are carried out in the continuous plasma by changing gas sorts and / or the gas flow rate.
References Cited (Backward Citations)
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