Patent EP0533519A2 successfully refreshed from Google Patents.
EP0533519A2
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Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-08-26
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Granted: —
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Expires: 2012-08-26
Abstract
Abstract A superconducting device which comprises a substrate (10), an extremely thin superconducting channel (20) formed of an oxide superconductor thin film (2) on the principal surface of the substrate (10). The superconducting device comprises a superconducting source electrode (3) and a superconducting drain electrode (4) of a relatively thick thickness which are formed of the oxide superconductor on the superconducting channel (20) separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel (20) between the superconducting source electrode (3) and the superconducting drain electrode (4). The superconducting device also comprises a gate electrode (5) through a gate insulator (9) on the superconducting channel (20) for controlling the superconducting current flowing through the superconducting channel. The superconducting device further comprises an oxide layer or oxide layers (6) having an extremely thin thickness between the superconducting channel (20) and the gate insulator (9) and/or between the superconducting channel (20) and the substrate (10), which are formed of an oxide which improves at most surface / interface of the oxide superconductor thin film which constitutes the superconducting channel.
Inventors
- 👤 So c/o Tanaka
- 👤 Michitomo c/o Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 20:06
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/205; H10N60/207
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
151 words
A superconducting device comprising a substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the principal surface of the substrate, a superconducting source electrode and a superconducting drain electrode of a relatively thick thickness formed of the oxide superconductor on the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source electrode and the superconducting drain electrode, a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and an oxide layer or oxide layers having an extremely thin thickness between the superconducting channel and the gate insulator and/or between the superconducting channel and the substrate, which are formed of an oxide which improves at most surface of the oxide superconductor thin film which constitutes the superconducting channel.
Claim 2
Dependent Claim
24 words
A superconducting device claimed in Claim 1 wherein the superconducting device comprises said oxide layer between the superconducting channel and the gate insulator only.
Claim 3
Dependent Claim
23 words
A superconducting device claimed in Claim 1 wherein the superconducting device comprises said oxide layer between the superconducting channel and the substrate only.
Claim 4
Dependent Claim
33 words
A superconducting device claimed in Claim 1 wherein the superconducting device comprises both of said oxide layers between the superconducting channel ant the gate insulator and between the superconducting channel and the substrate.
Claim 5
Dependent Claim
29 words
A superconducting device claimed in Claim 1 wherein said oxide layer between the superconducting channel and the substrate is formed of a c -axis orientated Pr₁Ba₂Cu₃O 7-ε thin film.
Claim 6
Dependent Claim
51 words
A superconducting device claimed in Claim 1 wherein said oxide layer between the superconducting channel and the gate insulator is formed of a c -axis orientated Pr₁Ba₂Cu₃O 7-ε thin film, an SrO x thin film, a BaO x thin film, a KO x thin film or a PbO x thin film.
Claim 7
Dependent Claim
39 words
A superconducting device claimed in Claim 4 wherein both of said oxide layers between the superconducting channel and the substrate and between the superconducting channel and the gate insulator are formed of c -axis orientated Pr₁Ba₂Cu₃O 7-ε thin films.
Claim 8
Dependent Claim
65 words
A superconducting device claimed in Claim 4 wherein said oxide layer between the superconducting channel and the substrate is formed of a c -axis orientated Pr₁Ba₂Cu₃O 7-ε thin film and said oxide layer between the superconducting channel and the gate insulator is formed of an SrO x thin film, a BaO x thin film, a KO x thin film or a PbO x thin film.
Claim 9
Dependent Claim
31 words
A superconducting device claimed in Claim 1 wherein the oxide layer between the superconducting channel and the substrate has a thickness which is almost same as that of the superconducting channel.
Claim 10
Dependent Claim
37 words
A superconducting device claimed in Claim 1 wherein the oxide layer between the superconducting channel and the gate insulator is composed of the oxide crystal layer in which one to five unitcells of crystalline lattices are stacked.
Claim 11
Dependent Claim
42 words
A superconducting device claimed in Claim 1 wherein the superconducting channel is formed of a c -axis orientated oxide superconductor thin film and the superconducting source electrode and the superconducting drain electrode is formed of a -axis orientated oxide superconductor thin films.
Claim 12
Dependent Claim
32 words
A superconducting device claimed in Claim 1 wherein the oxide superconductor is formed of high-T c (high critical temperature) oxide superconductor, particularly, formed of a high-T c copper-oxide type compound oxide superconductor.
Claim 13
Dependent Claim
42 words
A superconducting device claimed in Claim 12 wherein the oxide superconductor is formed of oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O compound oxide superconductor material, a Bi-Sr-Ca-Cu-O compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O compound oxide superconductor material.
Claim 14
Dependent Claim
38 words
A superconducting device claimed in Claim 1 wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO₃ (100) substrate and a CdNdAlO₄ (001) substrate, and a semiconductor substrate.
Claim 15
Dependent Claim
42 words
A superconducting device claimed in Claim 14 wherein the substrate is formed of a silicon substrate and a principal surface of the silicon substrate is coated with an insulating material layer which is formed of a MgAlO₄ layer and a BaTiO₃ layer.
Claim 16
Independent Claim
165 words
A method of manufacturing a superconducting device, comprising the steps of forming on a surface of a substrate a first oxide superconductor thin film having an extremely thin thickness by MBE, continuously forming an oxide thin film on the oxide superconductor thin film having an extremely thin thickness by exchanging molecular beam sources, forming a gate insulator and a superconducting gate electrode stacked on the gate insulator on a portion of the oxide thin film, etching portions of said oxide thin film at the both sides of the gate electrode and the gate insulator, so that the portions of said oxide thin film are removed and the first oxide superconductor thin film is exposed at the portions, and growing a second oxide superconductor thin film on the exposed surface of the superconducting channel, so that a superconducting source electrode and a superconducting drain electrode having a relatively thick thickness are formed at opposite sides of the superconducting gate electrode, electrically isolated from the gate electrode.
Claim 17
Independent Claim
134 words
A method of manufacturing a superconducting device, comprising the steps of forming on a surface of a substrate an oxide thin film having an extremely thin thickness by MBE, continuously forming a first oxide superconductor thin film having an extremely thin thickness on the oxide thin film by exchanging molecular beam sources, forming a gate insulator and a superconducting gate electrode stacked on the gate insulator on a portion of the oxide superconductor thin film, and growing a second oxide superconductor thin film on the surface of the superconducting channel at the both sides of the gate electrode and the gate insulator, so that a superconducting source electrode and a superconducting drain electrode having a relatively thick thickness are formed at opposite sides of the superconducting gate electrode, electrically isolated from the gate electrode.
Claim 18
Independent Claim
191 words
A method of manufacturing a superconducting device, comprising the steps of forming on a surface of a substrate a first oxide thin film having an extremely thin thickness by MBE, continuously forming a first oxide superconductor thin film having an extremely thin thickness on the oxide thin film by exchanging molecular beam sources, continuously forming a second oxide thin film on the oxide superconductor thin film having an extremely thin thickness by exchanging molecular beam sources, forming a gate insulator and a superconducting gate electrode stacked on the gate insulator on a portion of the second oxide thin film, etching portions of the second oxide thin film at the both sides of the gate electrode and the gate insulator, so that the portions of the second oxide thin film are removed and the first oxide superconductor thin film is exposed at the portions, and growing a second oxide superconductor thin film on the exposed surface of the superconducting channel, so that a superconducting source electrode and a superconducting drain electrode having a relatively thick thickness are formed at opposite sides of the superconducting gate electrode, electrically isolated from the gate electrode.
References Cited (Backward Citations)
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