Patent EP0533129A2 successfully refreshed from Google Patents.
EP0533129A2
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EP
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Deposition of silicon dioxide films at temperatures as low as 100 C by LPCVD using organodisilane sources
Assignee: Air Products and Chemicals Inc
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Filing: 1992-09-16
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Granted: —
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Expires: 2012-09-16
Abstract
Abstract Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100°C with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.
Inventors
- 👤 David Allen Roberts
- 👤 Arthur Kenneth Hochberg
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
103 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95°C to about 500°C in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H₃Si-CH(R)-[CH(R')] y -CH(R'')-SiH₃ wherein y is 0, 1, 2, 3, 4, 5, 6 and R, R' , and R'' are independently selected from the group consisting essentially of H and C₁-C₃ hydrocarbon; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 2
Dependent Claim
14 words
A process according to Claim 1 wherein said oxygen containing feed is oxygen gas.
Claim 3
Dependent Claim
21 words
A process according to Claim 2 wherein the ratio of said oxygen gas to said organodisilane is between 1:1 and 15:1.
Claim 4
Dependent Claim
22 words
A process according to Claim 1 wherein the organodisilane has the general formula H₃Si-(CH₂) x -SiH₃ wherein x is 2,3,4,5 or 6.
Claim 5
Dependent Claim
12 words
A process according to Claim 1 wherein the organodisilane is 1,4 disilabutane.
Claim 6
Dependent Claim
14 words
A process according to Claim 5 wherein the temperature is maintained at about 100°C.
Claim 7
Dependent Claim
17 words
A process according to Claim 6 wherein the vacuum is maintained at between 0.5 and 1.5 torr.
Claim 8
Dependent Claim
13 words
A process according to Claim 1 wherein the substrate is a silicon wafer.
Claim 9
Dependent Claim
25 words
A process according to Claim 1 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
Claim 10
Dependent Claim
82 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95°C to about 500°C in a vacuum; introducing into the vacuum a silicon-containing feed and an oxygen-containing feed, said silicon containing feed consisting essentially of an organodisilane having the general formula H₃Si - (CH₂) x - SiH₃ wherein x is 2,3,4,5 or 6; and maintaining said temperature and vacuum conditions thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 11
Dependent Claim
14 words
A process according to Claim 10 wherein said oxygen containing feed is oxygen gas.
Claim 12
Dependent Claim
21 words
A process according to Claim 11 wherein the ratio of said oxygen gas to said organodisilane is between 1:1 and 15:1.
Claim 13
Dependent Claim
12 words
A process according to Claim 10 wherein the organodisilane is 1,4 disilabutane.
Claim 14
Dependent Claim
14 words
A process according to Claim 10 wherein the temperature is maintained at about 100°C.
Claim 15
Dependent Claim
17 words
A process according to Claim 10 wherein the vacuum is maintained at between .05 and 1.5 torr.
Claim 16
Dependent Claim
13 words
A process according to Claim 10 wherein the substrate is a silicon wafer.
Claim 17
Dependent Claim
20 words
A process according to Claim 10 wherein the organodisilane is 1,4 disilabutane and the temperature is between 100°C and 400°C.
Claim 18
Dependent Claim
25 words
A process according to Claim 10 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
Claim 19
Dependent Claim
55 words
A low temperature chemical vapor deposition process comprising the steps of: heating a substrate to a temperature of from about 95°C to about 500°C in a vacuum; introducing into the vacuum 1,4 disilabutane and oxygen gas; and maintaining said temperature and vacuum condition thereby causing a film of silicon dioxide to deposit on said substrate.
Claim 20
Dependent Claim
14 words
A process according to Claim 20 wherein the temperature is between 100°C and 400°C.
Claim 21
Dependent Claim
16 words
A process according to Claim 20 wherein the vacuum is maintained between 0.5 and 1.5 torr.
Claim 22
Dependent Claim
25 words
A process according to Claim 20 wherein the substrate is selected from the group consisting of metals, plastics, insulators, dielectrics, photoresist materials and semi-conductor materials.
References Cited (Backward Citations)
No citation records indexed.
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