EP0525633A1
Expired / Lapsed
EP
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Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1992-07-23
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Granted: —
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Expires: 2012-07-23
Abstract
Abstract A magnetron plasma etching apparatus comprises a suscepter (12) serving as an electrode on which a silicon wafer is mounted. A carbon ring (22) having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter (12). The carbon (22) ring is electrically connected to the suscepter (12). The carbon ring improves uniformity of etching of the wafer.
Inventors
- 👤 Makoto c/o Intellectual Property Div. Hasegawa
- 👤 Takaya c/o Intellectual Property Div. Matsushita
- 👤 Keiji c/o Intellectual Property Div. Horioka
- 👤 Isahiro C/O Intellectual Property Div. Hasegawa
- 👤 Toshihisa c/o OPERATIONAL. HEAD OFFICE Nozawa
- 👤 Yoshio c/o OPERATIONAL. HEAD OFFICE Ishikawa
- 👤 Masahito c/o OPERATIONAL. HEAD OFFICE Hiratsuka
- 👤 Satoshi c/o OPERATIONAL. HEAD OFFICE Kaneko
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 06:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32431; H01J37/3244; H01J37/32532; H01J37/3255; H01J37/32568; H01J37/32623; H01J37/32642; H01J37/3266; H01J37/32669; H01J37/32715; H01J37/32798; H01J37/32816; H01J37/32834; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
160 words
A magnetron plasma processing apparatus comprising: a process chamber (1) allowed to be set in a highly reduced pressure atmosphere; a first electrode (12) exposed into said process chamber and having a mounting surface on which a substrate to be processed is mounted; a second electrode (30) exposed into said process chamber and having a major surface opposite to the mounting surface of said first electrode, said major surface including a first surface portion (30a) opposite and parallel to the mounting surface and second surface portions (30b) on both sides of the first surface portion and almost perpendicular to the mounting surface; power supply means (44) for applying a voltage to said first and second electrodes to generate an electric field therebetween; and magnetic field generation means (38) arranged behind the first surface portion of said second electrode, for generating a magnetic field between said first and second electrodes so as to cross the electric field substantially at right angles.
Claim 2
Dependent Claim
160 words
A magnetron plasma processing apparatus comprising: a process chamber (1) allowed to be set in a highly reduced pressure atmosphere; a first electrode (12) exposed into said process chamber and having a mounting surface on which a substrate to be processed is mounted; a second electrode (30) exposed into said process chamber and having a major surface opposite to the mounting surface of said first electrode, said major surface including a first surface portion (30a) opposite and parallel to the mounting surface and second surface portions (30b) on both sides of the first surface portion and almost perpendicular to the mounting surface; power supply means (44) for applying a voltage to said first and second electrodes to generate an electric field therebetween; and magnetic field generation means (38) arranged behind the first surface portion of said second electrode, for generating a magnetic field between said first and second electrodes so as to cross the electric field substantially at right angles.
Claim 3
Dependent Claim
37 words
The apparatus according to claim 1, characterized in that at least part of a housing defining said process chamber (1) is formed of a conductive member, and said second electrode (30) is formed of the conductive member.
Claim 4
Dependent Claim
42 words
The apparatus according to claim 2, characterized in that said magnetic field generation means comprises a permanent magnet (38) arrange behind the conductive member (30) and can be rotated about an axis perpendicular to the mounting surface of said first electrode (12).
Claim 5
Dependent Claim
40 words
The apparatus according to claim 1, characterized in that a conductive ring (22) having an outline larger than that of the substrate is formed around the mounting surface of said first electrode (12) and electrically connected to said first electrode.
Claim 6
Dependent Claim
23 words
The apparatus according to claim 4, characterized in that said conductive ring (22) has an electrical resistance lower than that of the substrate.
Claim 7
Dependent Claim
24 words
The apparatus according to claim 5, characterized in that said conductive ring (22) is formed of carbon and the substrate is a silicon wafer.
Claim 8
Dependent Claim
30 words
The apparatus according to claim 5, characterized by further comprising introduction means (33) for introducing etching gas into said process chamber and exhaust means (34) for exhausting said process chamber.
Claim 9
Dependent Claim
80 words
The apparatus according to claim 4, characterized in that said first electrode (12) is supported in an insulating frame (16) arranged in said process chamber, said insulating frame is supported in a conductive frame (32) whose potential is substantially the same as that of said second electrode (30), and said conductive ring is mounted so as to extend from a shoulder portion of said first electrode to a recess formed in the insulating frame in continuity with the shoulder portion.
Claim 10
Dependent Claim
77 words
The apparatus according to claim 4, characterized in that said first electrode (12) is supported in an insulating frame (16) arranged in said process chamber, said insulating frame is supported in a conductive frame (32) whose potential is substantially the same as that of said second electrode (30), and said conductive ring is mounted so as to extend from a shoulder portion of said first electrode onto an insulating ring (32c) formed on the conductive frame (32).
Claim 11
Dependent Claim
29 words
The apparatus according to claim 9, characterized in that said insulating ring (32c) is arranged so as to extend over the insulating frame (16) and the conductive frame (32).
Claim 12
Dependent Claim
120 words
A plasma etching apparatus comprising: a process chamber (1) allowed to be set in a highly reduced pressure atmosphere; introduction means for introducing etching gas into said process chamber; a first electrode (12) exposed into said process chamber and having a mounting surface on which a substrate to be processed is mounted; a second electrode (30) exposed into said process chamber and having a major surface opposite to the mounting surface of said first electrode; power supply means (44) for applying a voltage to said first and second electrodes to generate an electric field therebetween; and a ring (22) surrounding the mounting surface of said first electrode and having an outline larger than that of the substrate to be processed.
Claim 13
Dependent Claim
120 words
A plasma etching apparatus comprising: a process chamber (1) allowed to be set in a highly reduced pressure atmosphere; introduction means for introducing etching gas into said process chamber; a first electrode (12) exposed into said process chamber and having a mounting surface on which a substrate to be processed is mounted; a second electrode (30) exposed into said process chamber and having a major surface opposite to the mounting surface of said first electrode; power supply means (44) for applying a voltage to said first and second electrodes to generate an electric field therebetween; and a ring (22) surrounding the mounting surface of said first electrode and having an outline larger than that of the substrate to be processed.
Claim 14
Dependent Claim
48 words
The apparatus according to claim 11, characterized in that said apparatus is a magnetron plasma etching apparatus and further comprises magnetic generation means (38) for generating a magnetic field between said first and second electrodes (12, 30) so as to cross the electric field substantially at right angles.
Claim 15
Dependent Claim
24 words
The apparatus according to claim 12, characterized in that said ring (22) is a conductive ring and electrically connected to said first electrode (12).
Claim 16
Dependent Claim
23 words
The apparatus according to claim 13, characterized in that said conductive ring (22) has an electrical resistance lower than that of the substrate.
Claim 17
Dependent Claim
24 words
The apparatus according to claim 14, characterized in that said conductive ring (22) is formed of carbon and the substrate is a silicon wafer.
Claim 18
Dependent Claim
80 words
The apparatus according to claim 13, characterized in that said first electrode (12) is supported in an insulating frame (16) arranged in said process chamber, said insulating frame is supported in a conductive frame (32) whose potential is substantially the same as that of said second electrode (30), and said conductive ring is mounted so as to extend from a shoulder portion of said first electrode to a recess formed in the insulating frame in continuity with the shoulder portion.
Claim 19
Dependent Claim
76 words
The apparatus according to claim 13, characterized in that said first electrode (12) is supported in an insulating frame (16) arranged in said process chamber, said insulating frame is supported in a conductive frame (32) whose potential is substantially the same as that of said second electrode (30), and said conductive ring is mounted so as to extend from a shoulder portion of said first electrode onto an insulating ring (32c) formed on the conductive frame.
Claim 20
Dependent Claim
29 words
The apparatus according to claim 17, characterized in that said insulating ring (32c) is arranged so as to extend over the insulating frame (16) and the conductive frame (32).
References Cited (Backward Citations)
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