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EP0523734A1
Expired / Lapsed
EP
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Burn-in apparatus and method
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-07-17
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Granted: —
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Expires: 2012-07-17
Abstract
Abstract A burn-in apparatus for use in burn-in tests includes a burn-in test container (6) for accommodating a plurality of semiconductor device. Also, the burn-in apparatus includes measuring means for individually measuring junction temperatures of semiconductor chips (7) of the respective semiconductor device by detecting electric characteristics of temperature sensors (72) built in the semiconductor chips, and temperature adjusting means (8) for controlling amounts of heat radiation and conduction of the semiconductor chips. The temperature adjusting means (8), such as means for controlling air flow rates of air nozzles of the container, is controlled by control means on the basis of outputs of the measuring means. Thus, the junction temperatures can be kept within a predetermined temperature range to thereby improve the accuracy of screening tests.
Inventors
- 👤 Tatsuya c/o Yokohama Works Hashinaga
- 👤 Masanori C/O Yokohama Works Nishiguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 00:59
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2855; G01R31/286; G01R31/2868; G01R31/2862; G01R31/2872; G01R31/2874; G01R31/2877; G01R31/2884; G01R31/302; G01R31/308; G01R31/309; G01R31/2856; G01R31/2863
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
86 words
A burn-in apparatus comprising: mounting means for mounting devices-to-be-tested each including a semiconductor chip with a temperature sensor built in; a test chamber for accommodating a plurality of the mounting means; temperature adjusting means provided on the test chamber for adjusting an environmental temperature inside the test chamber; temperature detecting means for individually measuring temperatures of the respective semiconductor chips, based on electric characteristics of the temperature sensors; and control means for controlling the temperature adjusting means, based on measured results of the temperature detecting means.
Claim 2
Dependent Claim
29 words
A burn-in apparatus according to claim 1, further comprising power supplying control means added thereto the power supplying means being controlled by the control means of the burn-in apparatus.
Claim 3
Dependent Claim
22 words
A burn-in apparatus according to claim 1, wherein the temperature sensors are provided by Schottky junction diodes formed on the semiconductor chips.
Claim 4
Dependent Claim
22 words
A burn-in apparatus according to claim 1, wherein the temperature sensors are provided by pn junction diodes formed on the semiconductor chips.
Claim 5
Dependent Claim
20 words
A burn-in apparatus according to claim 1, wherein the temperature sensors are provided by transistors formed on the semiconductor chips.
Claim 6
Dependent Claim
22 words
A burn-in apparatus according to claim 1, wherein the temperature sensors are provided by metal film transistors formed on the semiconductor chips.
Claim 7
Dependent Claim
29 words
A burn-in test apparatus according to claim 1, wherein the mounting means are each provided by a printed board, and a plurality of sockets provided on the printed board.
Claim 8
Dependent Claim
29 words
A burn-in apparatus according to claim 1, wherein the test chamber includes a plurality of slits for receiving the mounting means in a casing with a lid, and connectors.
Claim 9
Dependent Claim
32 words
A burn-in apparatus according to claim 1, wherein the temperature detecting means applies various voltages to each of the temperature sensors to measure values of voltages for a specific value of current.
Claim 10
Dependent Claim
51 words
A burn-in apparatus according to claim 1, wherein, in accordance with a pre-stored processing procedure and a look up table, the control means receives the electric characteristics measured by the temperature detecting means, compute the same, and supplies operational instructions to the temperature adjusting means and the power supplying control means.
Claim 11
Dependent Claim
32 words
A burn-in apparatus according to claim 2, wherein the power supplying control means adjusts the presence and absence of current feed to the respective devices-to-be-tested, and applying voltages for the respective devices.
Claim 12
Dependent Claim
80 words
A burn-in method comprising: the first step of deriving parameters for converting to junction temperatures electric characteristics of temperature sensors formed on respective semiconductor chips of devices-to-be-tested; the second step of measuring junction temperatures of a pre-determined number of the semiconductor chips in the chamber using the parameters; and the third step of adjusting the environmental temperature inside the test chamber, based on measurement results of junction temperatures, following the third step, the second and the third steps being repeated.
Claim 13
Dependent Claim
32 words
A burn-in method according to claim 12, wherein said third step comprises a step of said third step comprising a process of controlling applying voltages to the respective devices to be tested.
Claim 14
Dependent Claim
23 words
A burn-in method according to claim 12, further comprising a step of ending the burn-in test when a test ending condition is detected.
Claim 15
Dependent Claim
82 words
A burn-in method according to claim 12, wherein the temperature sensors are Schottky junction diodes, the parameters for each temperature sensor for deriving a junction temperature thereof is an applied voltage at a specific junction temperature for causing a trifle current of a specific value to flow, and a temperature coefficient of the applied voltage, and the parameters are given by measuring at various environmental temperatures with the devices-to-be tested unfed for causing the trifle current of the specific value to flow.
Claim 16
Dependent Claim
120 words
A burn-in method according to claim 12, wherein the temperature sensors are Schottky diodes, parameters for each temperature sensor for deriving a junction temperature thereof are an applied voltage at a specific junction temperature for causing a trifle current to flow, and a value of n in the following Formula, and the parameters are given by measuring, with the devices-to-be-tested unfed, applied voltages at the room temperature for causing trifle currents of various values, and using a relationship expressed by the following Formula. I F : Forward current V F : Forward voltage S : Schottky junction area A* : Effective Richardson constant T : Absolute temperature k : Boltzmann constant q : Electron charge φ B : Barrier height
Claim 17
Dependent Claim
83 words
A burn-in method according to claim 12, wherein the temperature sensors are pn junction diodes, and the parameters for each temperature sensor for deriving a junction temperature thereof are an applied voltage at a specific junction temperature for a trifle current of a specific value to flow, and a temperature coefficient of the applied voltage, and the parameters are given by measuring, with the devices-to-be-tested unfed, applied voltages for causing the trifle current of the specific value to flow at various environmental temperatures.
Claim 18
Dependent Claim
77 words
A burn-in method according to claim 12, wherein the temperature sensors are transistors, parameters for deriving junction temperatures of the respective temperature sensors are an applied voltage at a specific junction temperature for causing a trifle current of a specific value, and a temperature coefficient of the applied voltage, and the parameters are given by measuring, with the devices-to-be-tested unfed, applied voltages for causing the trifle current of the specific value to flow at various environmental temperatures.
Claim 19
Dependent Claim
83 words
A burn-in method according to claim 12, wherein the temperature sensors are a metal film, and the parameters for deriving a junction temperature of each temperature sensor are an applied voltage at a specific junction temperature for causing a trifle current of a specific value to flow, and a temperature coefficient of the applied voltage, and the parameters are given by measuring, with the devices-to-be-tested unfed, applied voltages for causing the trifle current of the specific value to flow at various environmental temperatures.
Claim 20
Dependent Claim
41 words
A burn-in method according to claim 14, wherein a condition for ending a burn-in test is a difference between a maximum one of measured values of junction temperatures of the temperature sensors, and a minimum one thereof exceeds an allowable value.
Claim 21
Dependent Claim
34 words
A burn-in method according to claim 14, wherein a condition for ending a test is a number of those of the devices-to-be-tested whose junction temperatures exceed a set temperature range exceeds an allowable number.
Claim 22
Dependent Claim
34 words
A burn-in method according to claim 14, wherein a condition for ending a test is a ratio of those of the devices-to-be-tested whose junction temperatures exceed a set temperature range exceeds an allowable value.
References Cited (Backward Citations)
US4145620A
Cited
US4734641A
Cited
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