High-frequency device

Claim 2

A high frequency filter comprising, a laminated body constituted by laminating at least first to fourth dielectric layers (1 to 4), first and second resonant conductors (9, 10) formed at intervals of a predetermined distance at the laminating surfaces of the second and third dielectric layers (2, 3) located in the center portion of the laminated body, GND electrodes (11) formed at intervals of a predetermined distance between the resonant conductors, and GND electrodes (6A, 7A) formed on outer surfaces of the first and fourth dielectric layers (1, 4) formed, in the laminated direction, on both sides of the dielectric layers, wherein said second and third dielectric layers (2, 3) are made of a material with a high dielectric constant (ε₁), and the first and fourth dielectric layers (1, 4) formed between the second and third dielectric layers and said outside GND electrodes (6A, 7A) made of a material with a dielectric constant (ε₂ ; ε₂ < ε₁) lower than that of said second and third dielectric layers (2, 3).

Claim 3

A high frequency filter comprising, a laminated body constituted by laminating at least first to eighth dielectric layers (1A to 4B), a GND electrode (6A) formed on an outer surface of the uppermost first dielectric layer (1A), first resonant conductors (9) at the laminating surfaces of the second and third dielectric layers (2A, 3A) located below the GND electrode (6A), GND electrode patterns (11A) formed at intervals of a predetermined distance between said resonant conductors (9), a GND electrode (7C) formed at the laminating surfaces of the fourth and fifth dielectric layers (4A, 1B) below said third dielectric layer, second resonant conductors (10) at the laminating surfaces of the sixth and seventh dielectric layers (2A, 3B) below said fifth dielectric layer, GND electrodes (11B) formed at intervals of a predetermined distance between said resonant conductors (10), and a GND electrode (7A) formed on an outer surface of the lowermost eighth dielectric layer (4B) below said seventh dielectric layer, wherein the second, third, sixth and seventh dielectric layers (2A, 3A, 2B, 3B) formed on both sides of the respective resonant conductors (9, 10) are made of a material with a high dielectric constant (ε₁) and the dielectric layers (1A, 4A, 1B, 4B) between said outside and central GND electrodes (6A, 7A, 7C) are made of a material with a dielectric constant (ε₂; ε₂ < ε₁) lower than that of said high dielectric layers (2A, 3A, 2B, 3B).

Claim 4

A dielectric resonator comprising, a laminated dielectric block constituted by laminating low dielectric layers (36-1, 36-2) and high dielectric layers (31-1 to 37-3), resonant conductors (34, 34-1, 34-2) formed inside the dielectric block, and a GND electrode (35) formed at the whole external circumferential surface of the dielectric body except for one side thereof, wherein the high dielectric layers (31-1 to 37-7) are formed on both sides, in the laminated direction, of said resonant conductors (34, 34-1, 34-2), and low dielectric layers (36-1, 36-2) are formed between said high dielectric layers and the GND electrode (35).

Claim 5

A dielectric filter comprising, a laminated body constituted by laminating low dielectric layers (56-1, 56-2) and high dielectric layers (57-1, 57-2) with a dielectric constant higher than that of the low dielectric layers, a plurality of resonant conductors (54-1 to 54-4) having different resonance frequencies and formed inside the laminated body, and a GND electrode (55) provided at the whole external circumferential surface of the laminated body except for one side thereof, wherein the high dielectric layers (57-1, 57-2) are formed on both sides, in the laminated direction, of said resonant conductors (54-1 to 54-4), and the low dielectric layers (56-1, 56-2) are formed between the high dielectric conductors (57-1, 57-2) and the GND electrodes (55) disposed on both sides, in the laminated direction.

Claim 6

A dielectric filter according to claim 5, wherein between said plurality of resonant conductors (54-1 to 54-4), low dielectric strips (61) having a dielectric constant lower than that of the high dielectric layers (57-1, 57-2) formed on both sides of the resonant conductors are formed, respectively.

Claim 7

A dielectric filter according to claim 5, wherein a plurality of holes (62) are formed in the high dielectric layers (57-1, 57-1) disposed on both sides of the resonant conductors at positions corresponding to the areas between the resonant conductors, and the holes (62) are filled with a dielectric having a dielectric constant lower than that of said high dielectric layers.

Claim 8

An oscillator module comprising, a resonant conductor (72) constituting a strip line resonator, high dielectric layers (71-4H, 71-5H) sandwiching both sides of the resonator conductor (72), low dielectric layers (71-3L, 71-6L) sandwiching both sides of the high dielectric layers, and a GND patterns (73-1A, 73-2) formed on both sides of the dielectric layers except for a certain part, wherein, in the laminated direction of said dielectric layers, said GND pattern (73-2) is formed, through the intermediary of the dielectric layers (71-5H, 71-6L), on one side (under side) of the resonant conductor (72), and dielectric layers (71-1L, 71-2L) are formed on the other side (upper side) of the resonant conductor (72) at a portion facing the resonant conductor, without forming a GND pattern.