Patent EP0508266A1 successfully refreshed from Google Patents.
EP0508266A1
Expired / Lapsed
EP
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Semiconductor device having reduced die stress and process for making the same
Assignee: Motorola Solutions Inc
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Filing: 1992-03-30
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Granted: —
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Expires: 2012-03-30
Abstract
Abstract A semiconductor device (20) has reduced die stress by incorporating a lid (30) which constrains the expansion and contraction of an encapsulant. In one embodiment, a semiconductor die (22) having an active surface (23) is coupled to a plurality of leads (24). An encapsulant (28) is disposed on the active surface. The lid (30) overlies the active surface (23) and is adhesively coupled to the semiconductor die (22) by the encapsulant (28). The lid is of a material which has a coefficient of thermal expansion which closely approximates that of the semiconductor die in order to prevent stress build-up in the die which is normally caused by higher rates of expansion and contraction of the encapsulant in comparison to the those of the semiconductor die.
Inventors
- 👤 Leo M. Higgins
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 19:40
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W42/00; H10W40/00; H10W40/20; H10W40/25; H10W40/253; H10W42/20; H10W70/00; H10W70/40; H10W70/464; H10W74/00; H10W74/10; H10W74/131; H10W76/00; H10W76/40; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/726; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A semiconductor device (20, 31) having reduced die stress comprising: a semiconductor die (22) having an active surface (23); a plurality of leads (24) electrically coupled to the active surface; a lid (30, 32) overlying the active surface of the semiconductor die and separated from the active surface by a space, the lid being of a material which has a coefficient of thermal expansion which closely approximates that of the semiconductor die; and an encapsulant material (28) filling at least a portion of the space between the lid and the semiconductor die, the encapsulant material having a thickness on the order of one millimeter or less above the semiconductor die, and adhesively coupled to both the lid and the active surface of the semiconductor die such that the lid constrains thermal expansion and contraction of the encapsulant material to reduce semiconductor die stress.
Claim 2
Dependent Claim
153 words
A semiconductor device (33) having reduced die stress comprising: a semiconductor die (22) having an active surface (23), the active surface having a peripheral portion and a central portion; a plurality of leads (24) electrically coupled to the peripheral portion of the active surface of the semiconductor die; a lid (34) overlying the plurality of leads and the active surface of the semiconductor die, the lid having a protruding portion (35) positioned adjacent the active surface which is closer to the active surface of the semiconductor die than other portions of the lid to enhance thermal dissipation, the lid being of a material which has a coefficient of thermal expansion which closely approximates that of the semiconductor die; and an encapsulant material (28) adhesively coupling the lid to the active surface of the semiconductor die such that the lid constrains thermal expansion and contraction of the encapsulant material to reduce semiconductor die stress.
Claim 3
Dependent Claim
129 words
A semiconductor device (38) having reduced die stress comprising: a semiconductor die (22) comprised of a bulk material and having an active surface (23), the active surface having a peripheral portion and a central portion; a plurality of leads (24) electrically coupled to the peripheral portion of the active surface of the semiconductor die; a lid (37) overlying the active surface of the semiconductor die and separated from the active surface by a space (36), the lid being of a material which has a coefficient of thermal expansion which closely approximates that of the semiconductor die; and an encapsulant material (28) adhesively coupling the lid to the peripheral portion of the active surface of the semiconductor die without completely filling the space between the active surface and the lid.
Claim 4
Dependent Claim
144 words
A semiconductor device (50) having reduced die stress comprising: a semiconductor die (40) having an active surface (43); a lid (48) overlying the active surface of the semiconductor die and separated from the active surface by a space, the lid being of a material which has a coefficient of thermal expansion which closely approximates that of the semiconductor die; a plurality of leads (44) electrically coupled to the active surface, at least one of the plurality of leads being designated as a ground lead and being electrically coupled to the lid; and an encapsulant material (46) filling at least a portion of the space between the lid and the semiconductor die and adhesively coupled to both the lid and the active surface of the semiconductor die such that the lid constrains thermal expansion and contraction of the encapsulant material to reduce semiconductor die stress.
Claim 5
Dependent Claim
21 words
The semiconductor device of claim 1, 2, 3, or 4 wherein both the lid and semiconductor die are comprised of silicon.
Claim 6
Dependent Claim
20 words
The semiconductor device of claim 1, 2, 3, or 4 wherein the encapsulant material is a thermally conductive encapsulant material.
References Cited (Backward Citations)
US4177480A
Cited
GB2039145A
Cited
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