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EP0506012A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Apparatus for producing superconducting oxide film by MOCVD process

Assignee: International Superconductivity Technology Center
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Filing: 1992-03-25
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Granted: —
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Expires: 2012-03-25
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Abstract

Abstract An apparatus for producing a superconducting oxide film with stable properties by a chemical vapor phase growth process, suitable for mass production, is provided with a gas analyzer comprising a differential pressure meter (38) between a raw material gas collector tube (35) provided in a transfer line (8) for leading a raw material gas to a film forming chamber and a bypass line (37), a dilution gas line (49) interlocked with the differential pressure meter (38) and for leading a dilution gas to the raw material gas collector tube (35), a gas separation column (42) branched from the bypass line, a gas detector (31) connected to the gas separation column (42), flow rate controllers (50) for carrier gases (43) and (44) and a thermostat (13) for heating all the lines. Amounts of raw materials gases can be readily measured and controlled and thus superconducting oxide films of stable properties in a constant metal composition ratio can be continuously produced, and thus the present apparatus is suitable for mass production of tape form, superconducting materials. <IMAGE>

Inventors

  • 👤 Kazutoshi Higashiyama
  • 👤 Takahisa Ushida
  • 👤 Izumi Hirabayashi
  • 👤 Shoji Tanaka

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 02:38
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C23C16/448; C23C16/52; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/734; Y10S505/786

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 259 words
An apparatus for producing a superconducting oxide film by metal organic chemical vapor deposition, which comprises a raw material gas generator (1, 2, 3) provided with a heater (4, 5, 6) and for holding a raw material organic metal, a film formation chamber (10) provided with a heated substrate (11) therein, a raw material gas transfer line (8) provided between the raw material gas generator (1, 2, 3) and the film formation chamber (10) and kept at a given temperature , a vacuum pump (12) for evacuating the film formation chamber (10) to reduced pressure, and a raw material gas analyzer (16) comprising a raw material collector tube (35) provided in the raw material gas transfer line (8), a carrier line (37) provided as a bypass to the raw material gas collector tube (35), a differential pressure meter (38) provided between the raw material gas collector tube (35) and the carrier line (37), a dilution gas line (49) interlocked with the differential pressure meter (38) and for leading a dilution gas to the raw material gas collector tube (35), a vacuum pump (46) for evacuating the raw material gas collector tube (35), a gas separation column (42) branched from the carrier line (37), a gas detector (31) connected to the gas separation column (42), a flow rate controller (50) for supplying a carrier gas to the carrier line (37) and flow path switch valves (32, 33, 34, 36, 39, 40, 41,45) provided at branches of all the lines, and heating means (13, 14, 15) for heating all the lines.
Claim 2
Dependent Claim 22 words
An apparatus according to Claim 1, wherein the gas detector (31) is a hydrogen flame ionization detector or a thermal conductivity detector.
Claim 3
Dependent Claim 61 words
An apparatus according to Claim 1 or 2, wherein a control means for controlling the flow rate controller (50) for supplying the carrier gas or the heater (4,5,6) of the raw material gas generator (1, 2, 3) by a control signal proportional to a difference between an output value of the gas detector (31) and a set value is further provided.

References Cited (Backward Citations)

US4783343A Cited
EP0408753A1 Cited
EP0370311A2 Cited

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