Patent EP0505259A2 successfully refreshed from Google Patents.
EP0505259A2
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EP
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Superconducting field effect transistor and method for making a multilayer structure used in that transistor
Assignee: Bull SAS
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Filing: 1992-03-16
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Granted: —
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Expires: 2012-03-16
Abstract
Abstract The transistor 10 comprises a substrate 11 carrying in succession a channel structure 14 made of alternately superconducting 17 and non-superconducting 18 layers each having a thickness of the order of magnitude of the Debye length, and of two electrodes, source and drain 12, 13, separated by a film 16 for insulating the gate 15. The transistor can conduct a high current under low gate-control and drain/source voltages. <IMAGE>
Inventors
- 👤 Pierre Bernstein
- 👤 Julien Bok
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 21:15
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/80; H10N60/85; H10N60/855; H10N60/857; H10N60/858; H10N60/20; H10N60/205; H10N60/207
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