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EP0504473A1
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Magnetic multilayer and magnetoresistance effect element
Assignee: TDK Corp
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Filing: 1991-08-19
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Granted: —
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Expires: 2011-08-19
Abstract
Abstract A magnetic multilayer is an alternate stack of a plurality of magnetic thin films containing Fe, Co or Ni and a plurality of Ag thin film. Both the films are formed by molecular beam epitaxy to a thickness of 2 to 60 Å. The multilayer has an axis of easy magnetization in a plane parallel to the surface and an in-plane squareness ratio of 0.5 or lower and exhibits antiferromagnetism. The multilayer shows giant magnetoresistance change in low magnetic fields, for example, a magnetoresistance change of 1 to 40% in a magnetic field of 0.01 to 20 kOe.
Inventors
- 👤 Satoru C/O Tdk Corporation Araki
- 👤 Kiyomi C/O Tdk Corporation Yasui
- 👤 Yoshikazu C/O Tdk Corportation Narumiya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 14:42
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y25/00; H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/325; H10; H10N; H10N50/00; H10N50/80; H10N50/85; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12632
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
68 words
A magnetic multilayer having a surface comprising at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film stacked one on top of another, said multilayer having an axis of easy magnetization in a plane parallel to the surface and a squareness ratio Br/Bs in the plane of up to 0.5.
Claim 2
Dependent Claim
24 words
The magnetic multilayer of claim 1 wherein said magnetic thin film and said Ag thin film are formed by a molecular beam epitaxial method.
Claim 3
Dependent Claim
41 words
A magnetic multilayer comprising at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film stacked one on top of another, and exhibiting antiferromagnetism.
Claim 4
Dependent Claim
24 words
The magnetic multilayer of claim 3 wherein said magnetic thin film and said Ag thin film are formed by a molecular beam epitaxial method.
Claim 5
Dependent Claim
60 words
A magnetic multilayer comprising at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni having a thickness of 2 to 60 Å, and at least one Ag thin film having a thickness of 2 to 60 Å deposited one on top of another by a molecular beam epitaxial method.
Claim 6
Dependent Claim
36 words
The magnetic multilayer of claim 5 having a surface, said multilayer having an axis of easy magnetization in a plane parallel to the surface and a squareness ratio Br/Bs in the plane of up to 0.5.
Claim 7
Dependent Claim
8 words
The magnetic multilayer of claim 5 exhibiting antiferromagnetism.
Claim 8
Dependent Claim
19 words
A magnetoresistance effect element comprising a magnetic multilayer as set forth in any one of claims 1 to 7.
References Cited (Backward Citations)
US4935311A
Cited
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