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EP0503200A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Package for microwave integrated circuit

Assignee: Mitsubishi Electric Corp
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Filing: 1991-12-19
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Granted: —
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Expires: 2011-12-19
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Abstract

Abstract A package for a microwave integrated circuit comprises a first dielectric layer (2b) on the surface of which a microwave integrated circuit and a transmission line (6) inputting or outputting a signal of the microwave integrated circuit are arranged, a second dielectric layer (2a) laminated on the first dielectric layer so as to surround the microwave integrated circuit, a first grounding metal (1b) layer produced on the entire rear surface of the first dielectric layer, a second grounding metal layer produced on the second dielectric layer (1a), a first intermediate-layer grounding metal (1c) produced on the same plane as that on which the transmission line is produced and forming a co-planar type line with the transmission line, and through holes electrically connecting the intermediate-layer grounding metal with the first and second grounding metals. Therefore, the transmission line is shielded in the vicinity thereof in the horizontal direction to the transmission line. As the result, the perimeter of the shielding metal in the cross section vertical to the transmission line is shortened, thereby suppressing the inductance component.

Inventors

  • 👤 Takayuki c/o Mitsubishi Denki K.K. Katoh

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-03 15:51
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W72/00; H10W72/50; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 128 words
A package for a microwave integrated circuit, comprising: a first dielectric material layer on the surface of which a microwave integrated circuit and a transmission line inputting or outputting a signal of said microwave integrated circuit are arranged; a second dielectric material layer laminated on said first dielectric layer so as to surround said microwave integrated circuit; a first grounding metal layer produced on the entire rear surface of said first dielectric layer; a second grounding metal layer produced on said second dielectric layer; a first intermediate-layer grounding metal produced on the same plane as that on which said transmission line is produced, forming a co-planar type line with said transmission line; and through holes electrically connecting said intermediate-layer grounding metal with said first and second grounding metals.
Claim 2
Dependent Claim 26 words
A package for a microwave integrated circuit in accordance with claim 1 wherein said grounding metal layer comprises gold by electrolytic plating, tungsten, or gold-plated tungsten.
Claim 3
Dependent Claim 27 words
A package for a microwave integrated circuit in accordance with claim 1 wherein said dielectric layer comprises ceramic, low temperature firing glass, aluminum nitride, or porous Teflon.
Claim 4
Dependent Claim 33 words
A package for a microwave integrated circuit in accordance with claim 1 wherein an IC chip bonding part on which said microwave integrated circuit is bonded comprises gold-plated titanium or gold-plated aluminum nitride.
Claim 5
Dependent Claim 42 words
A package for a microwave integrated circuit in accordance with claim 1 wherein a metal film is plated on the side wall of the central aperture of said upper dielectric layer and said upper-layer grounding metal thereby to shield the IC chip.
Claim 6
Dependent Claim 23 words
A package for a microwave integrated circuit in accordance with claim 1 wherein said through holes electrically conduct between said grounding metal layers.
Claim 7
Dependent Claim 22 words
A package for a microwave integrated circuit in accordance with claim 1 which can be practically used at 18 to 30 GHz.
Claim 8
Dependent Claim 37 words
A package for a microwave integrated circuit in accordance with claim 1 wherein a plurality of through holes are arranged at both side vicinity of said transmission line so as to form a pseudo coaxial line configuration.
Claim 9
Dependent Claim 31 words
A package for a microwave integrated circuit in accordance with claim 1 wherein the width of said intermediate-layer grounding metal is three to five times as that of said transmission line.
Claim 10
Dependent Claim 67 words
A package for a microwave integrated circuit in accordance with any of the preceding claims 1-3, 5-9, further comprising: a second intermediate-layer grounding metal produced on at least one of portions between said first grounding metal layer and said first intermediate-layer grounding metal and between said second grounding metal layer and said first intermediate-layer grounding metal; and through holes electrically connecting these metal layers with each other.
Claim 11
Dependent Claim 37 words
A package for a microwave integrated circuit in accordance with claim 10 wherein an IC chip bonding part on which said microwave integrated circuit is bonded comprises titanium mixed with gold or aluminum nitride mixed with gold.

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