Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
41 words
A semiconductor device comprising a capacitor formed of a ferroelectric film or a high dielectric constant film as an elemental component, which is characterized in that at least one of electrodes of the capacitor has a connection through a ferroelectric film.
Claim 2
Dependent Claim
85 words
A semiconductor device comprising, as elemental components, an active element formed on the principal surface or in the inside of a semiconductor body, a capacitor formed of a ferroelectric film or a high dielectric constant film formed through an electrode, an isolation oxide film for the active element and a wiring electrode for the connection of the capacitor, which is characterized in that at least a conductive, reaction-preventing film is formed at the wiring electrode, and that the electrode contacts with the conductive, reaction-preventing film.
Claim 3
Dependent Claim
101 words
A semiconductor device comprising, as elemental components, an active element formed on the principal surface or in the inside of a semiconductor body, a capacitor formed of a ferroelectric film or a high dielectric constant film formed through an electrode, an isolation oxide film for the active element and a wiring electrode for the connection of the capacitor, which is characterized in that the electrode connected to the wiring electrode is formed as a stacked structure which comprises a conductive, reaction-preventing film contacting with the wiring electrode and an electrode contacting with the ferroelectric film or the high dielectric constant film.
Claim 4
Dependent Claim
92 words
A semiconductor device comprising, as elemental components, an active element formed on the principal surface or in the inside of a semiconductor body, a capacitor formed of a ferroelectric film or a high dielectric constant film formed through an electrode, an isolation oxide film for the active element and a wiring electrode for the connection of the capacitor, which is characterized in that the electrode of the capacitor is connected to a diffusion layer formed at the principal surface or in the inside of the semiconductor body through a conductive, reaction-preventing film.
Claim 5
Dependent Claim
46 words
A semiconductor device as claimed in claim 2 or 4, which is characterized in that a metal silicide is formed at an interface where the ferroelectric, reaction-preventing film contacts with a diffusion layer formed at the principal surface or in the inside of the semiconductor body.
Claim 6
Dependent Claim
99 words
A semiconductor device as claimed in any one of claims 1 to 5, which is characterized in that the conductive, reaction-preventing film is any one of films selected from a group of a high melting point metal film of Mo, W, Ti, Ta, Ru or Re, a high melting point metal silicide film of Mo, W, Ti, Ta, Ru or Re, a high melting point metal oxide film of Mo, W, Ti, Ta, Ru or Re, a high melting point metal nitride oxide film of Mo, W, Ti, Ta, Ru or Re and at least one compound film thereof.
Claim 7
Dependent Claim
49 words
A semiconductor device as claimed in claim 5, which is characterized in that the metal silicide film is any one of films selected from a group of a high melting point metal silicide film of Mo, W, Ti, Ta, Ru or Re and at least one compound film thereof.
Claim 8
Dependent Claim
33 words
A semiconductor device as claimed in any one of claims 1 to 7, which is characterized in that the ferroelectric film or the high dielectric constant film is PZT, PLZT, SrTiO₃ or Ta₂O₅.