EP0500980A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Cantilevered microtip
Assignee: Tencor Instruments Inc
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Filing: 1991-02-27
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Granted: —
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Expires: 2011-02-27
Abstract
Abstract A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A two-layer semiconductor material structure is provided (13), one layer being n type (15) and the other layer being p type (17). A thin pencil of ions (22) of n type is implanted through the n type layer into the p type layer (17), through a small aperture in a mask layer (19) that overlies the n type layer. The p type material is then etched away, leaving the n type ion profile (23) and the n type layer as a cantilevered microtip. The n type semiconductor layer may be replaced by a layer of any material that resists etching by the selected etchant.
Inventors
- 👤 Armand P. Neukermans
- 👤 Josef Berger
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 10:30
CPC Classifications
G; G01; G01Q; G01Q70/00; G01Q70/16; G01Q70/08; G01Q70/10; G01Q70/14; H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
199 words
A method of producing a cantilevered microtip (35), the method comprising the steps of: providing a two-layer structure (15,17) of materials, having a first layer (15) that is resistant to etching by a selected etchant, adjacent to a second layer (17) of semiconductor material with doping of a first electrical conductivity type, where the first layer (15) has an exposed surface and where the second layer of material is rapidly etched by the selected etchant; providing an ion implant mask (19) adjacent to the exposed surface of the first layer, the mask having at least one aperture (21) therein that exposes a small area of the adjacent exposed surface; implanting ions, formed from an element of a second electrical conductivity type, of predetermined kinetic energy into the two-layer structure (15,17) through the mask (19) in a predetermined direction so that the ions implanted form an ion profile (23) with a controllable aspect ratio in the second layer (17); preferably removing the mask material; and removing the portion of the second layer (17) that is not implanted with ions by etching with the selected etchant, to expose the ion profile and the first layer as a single connected unit (31).
Claim 2
Dependent Claim
35 words
The method of claim 1, further comprising the step of orienting said second layer (17) so that said predetermined direction of ion implantation approximately coincides with an ion channeling direction in said second layer (17).
Claim 3
Dependent Claim
37 words
The method of claim 1 or 2 further comprising the step of choosing the concentration of said doping of said second layer (17) so that said ion profile (23) has an aspect ratio of at least 5.
Claim 4
Dependent Claim
21 words
The method of claim 1, 2, or 3 further comprising the step of subjecting said ion profile (23) to ion bombardment.
Claim 5
Independent Claim
23 words
The method of any of claims 1 to 4, further comprising the step of subjecting said ion profile (23) to reactive ion etching.
Claim 6
Independent Claim
258 words
A method of producing a cantilevered microtip (65) with a high aspect ratio, the method comprising the steps of: providing a three-layer structure (43,45,47) of materials, having a first layer (43) of semiconductor material with doping of a first electrical conductivity type, a second layer (47) of semiconductor material with doping of first electrical conductivity type, with a third layer (45) that is resistant to etching by a selected etchant, the third layer (45) being positioned between the first and second layers (43,47), where the first layer (43) has an exposed surface and lies between this exposed surface and the third layer (45) and where the first (43) and second layers (47) of material are rapidly etched by the selected etchant; providing an ion implant mask (49) adjacent to the exposed surface of the first layer (43), the mask (49) having at least one aperture (51) therein that exposes a small area of the adjacent exposed surface; implanting ions, formed from an element of second electrical conductivity type of predetermined kinetic energy into the first (43) and third layers (45) through the aperture (51) in the mask (49) in a predetermined direction so that the ions implanted form an ion profile (55) with a controllable aspect ratio in the first layer; removing the mask material; and removing the second layer (47) and the portion of the first layer (43) that is not implanted with ions by etching with the selected etchant, to expose the ion profile (55) and the third layer (45) as a single connected unit (61).
Claim 7
Dependent Claim
35 words
The method of claim 6, further comprising the step of orienting said first layer (43) so that said predetermined direction of ion implantation approximately coincides with an ion channeling direction in said first layer (43).
Claim 8
Dependent Claim
36 words
The method of claim 6 or 7, further comprising the step of choosing the concentration of said doping of said first layer (43) so that said ion profile has an aspect ratio of at least 5.
Claim 9
Dependent Claim
21 words
The method of claim 6, 7, or 8 further comprising the step of subjecting said ion profile (55) to ion bombardment.
Claim 10
Independent Claim
23 words
The method of any of claims 6 to 9, further comprising the step of subjecting said ion profile (55) to reactive ion etching.
References Cited (Backward Citations)
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