EP0148448A2
Expired / Lapsed
EP
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Etching method
Assignee: Hitachi Ltd
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Filing: 1984-12-13
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Granted: —
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Expires: 2004-12-13
Abstract
Abstract Focused ion beams (4) are implanted in the substrate (2), and a treatment method in which the etching rate varies with the ion concentration is subsequently applied thereto, whereby it is made possible to produce etching holes (5) having various sectional patterns or even a tunnel-shaped etching (51) in the substrate. It is also possible to produce patterns projected on the substrate. The present method is arranged so that the doping and the etching are self-aligned with each other, and therefore it is fit for precision work and is very useful for highly integrating a semiconductor device.
Inventors
- 👤 Hideo Sunami
- 👤 Massao Tamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:36
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; C; C23; C23F; C23F1/00; H10P30/202; H10P30/204; H10P30/28; H10P30/40; H10P32/00; H10P32/30; H10P32/302; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/60; H10P50/64; H10P50/642; H10P50/66; H10P50/663; H10P50/667; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
50 words
An etching method comprising implanting one or more kinds of ions in a solid material (2; 1) by focused ion beams (4) and subsequently processing said solid material (2; 1) by a treatment method in which the etching rate varies with the kind of the implanted ion and its concentration.
Claim 2
Dependent Claim
50 words
An etching method comprising implanting one or more kinds of ions in a solid material (2; 1) by focused ion beams (4) and subsequently processing said solid material (2; 1) by a treatment method in which the etching rate varies with the kind of the implanted ion and its concentration.
Claim 3
Dependent Claim
21 words
An etching method as set forth in Claim 1, wherein said treatment method is a dry etching means using a gas.
Claim 4
Dependent Claim
21 words
An etching method as set forth in Claim 1, wherein said treatment method is a wet etching means using a solution.
References Cited (Backward Citations)
No citation records indexed.
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