Semiconductor device and insulating film manufacturing method for a semiconductor device

Abstract

Abstract In forming an insulating film inside the contact hole or via contact hole of a semiconductor device, to fill an insulator into a contact hole without creating air holes, thereby forming an insulating film with a flat surface. An insulating film formation solution such as SOG, having the prescribed concentration of solid constituents, is applied and hardened a number of times to form an insulating film. The concentration of solid components in the SOG solution should be in the range of 9.5-12 wt%, and when the SOG solution is applied to a flat substrate in a single layer, the thickness of the SOG insulating film should be in the range of 2000-4000 Å.

Inventors

• 👤 Shoji Kobayashi
• 👤 Mitsuru Yoshikawa

Bibliographic Details