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EP0496424A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Constant-voltage generating circuit

Assignee: NEC Corp
•
Filing: 1992-01-24
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Granted: —
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Expires: 2012-01-24
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Abstract

Abstract In a constant-voltage generating circuit wherein a first series circuit of PMOS transistors (QP1,QP2), a second series circuit of a PMOS transistor (QP3) and an NMOS transistor (QN1) and a third series circuit of PMOS transistors (QP4,QP5) are connected between a power source line (VCC) and a ground line (GND), a capacitive element (QNC) is connected between a common junction node (N1) of the PMOS transistors (QP1,QP2) of the first series circuit and the ground line (GND). In addition to this capacitive element, another capacitive element (QPC) may be connected between the node and the power source line. Since the node (N1) is connected to gates of one (QP1) of the PMOS transistors of the first series circuit and the PMOS transistor (QP3) of the second series circuit, the capacitance at this node with respect to the power source line is large. Thus, when the power supply voltage fluctuates abruptly, the voltage at the first node also changes and thus the output voltage (VREF) also changes. This phenomenon can be suppressed by the action of the capacitive element connected between the common junction node of the first series circuit and the ground line. <IMAGE>

Inventors

  • 👤 Shingo c/o Nec Ic Microcomputer Sys. Ltd. Aizaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 13:28
CPC Classifications
G; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/247

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 198 words
A constant-voltage generating circuit having a first P-channel MOS transistor (Q P 1) having a source connected to a power source line (V CC ), and a gate and a drain both connected to a first node (N1); a second P-channel MOS transistor (Q P 2) having a source connected to said first node, a gate connected to a second node (N2), and a drain connected to a ground line (GND); a third P-channel MOS transistor (Q P 3) having a source connected to said power source line, a gate connected to said first node, and a drain connected to said second node; a fourth P-channel MOS transistor (Q P 4) having a source connected to said power source line, a gate connected to said second node, and a drain connected to an output terminal (V REF ); a current source element (Q N 1) connected between said second node and said ground line; and an impedance element (Q P 5) connected between said output node and said ground line, said constant-voltage generating circuit characterized by further comprising: a first capacitive element (Q N C) connected between said first node and said ground line for increasing capacitance therebetween.
Claim 2
Dependent Claim 72 words
A constant-voltage generating circuit according to claim 1, in which the ratio of (the total capacitance between the first node and the power source line) to (the total capacitance between the first node and the ground line) substantially equals the ratio of (the power source voltage - the absolute value of the threshold voltage of the P-channel MOS transistor) to (the absolute value of the threshold voltage of the P-channel MOS transistor).
Claim 3
Dependent Claim 42 words
A constant-voltage generating circuit according to claim 1, in which said first capacitive element is an N-channel MOS transistor (Q N C) having a gate connected to said first node, and a source and a drain both connected to the ground line.
Claim 4
Dependent Claim 31 words
A constant-voltage generating circuit according to claim 1, further comprising a second capacitive element (Q P C) connected between said first node and said power source line for increasing capacitance therebetween.
Claim 5
Dependent Claim 72 words
A constant-voltage generating circuit according to claim 4, in which the ratio of (the total capacitance between the first node and the power source line) to (the total capacitance between the first node and the ground line) substantially equals the ratio of (the power source voltage - the absolute value of the threshold voltage of the P-channel MOS transistor) to (the absolute value of the threshold voltage of the P-channel MOS transistor).
Claim 6
Dependent Claim 76 words
A constant-voltage generating circuit according to claim 4, in which said first capacitive element is an N-channel MOS transistor (Q N C) having a gate connected to said first node, and a source and a drain both connected to the ground line, and said second capacitive elements is a P-channel MOS transistor (Q P C) having a gate connected to said first node, and a source and a drain both connected to said power source line.
Claim 7
Dependent Claim 18 words
A constant-voltage generating circuit according to claim 1, in which said first capacitive element is a junction capacitor.
Claim 8
Dependent Claim 20 words
A constant-voltage generating circuit according to claim 4, in which said first and second capacitive elements are junction capacitors, respectively.
Claim 9
Dependent Claim 46 words
A constant-voltage generating circuit according to claim 1, in which said current source element is an N-channel MOS transistor (Q N 1) having a gate connected to said power source line, a drain connected to said second node, and a source connected to said ground line.
Claim 10
Dependent Claim 41 words
A constant-voltage generating circuit according to claim 1, in which said impedance element is a P-channel MOS transistor (Q P 5) having a source connected to said output terminal, and a gate and a drain both connected to said ground line.

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