Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
198 words
A constant-voltage generating circuit having a first P-channel MOS transistor (Q P 1) having a source connected to a power source line (V CC ), and a gate and a drain both connected to a first node (N1); a second P-channel MOS transistor (Q P 2) having a source connected to said first node, a gate connected to a second node (N2), and a drain connected to a ground line (GND); a third P-channel MOS transistor (Q P 3) having a source connected to said power source line, a gate connected to said first node, and a drain connected to said second node; a fourth P-channel MOS transistor (Q P 4) having a source connected to said power source line, a gate connected to said second node, and a drain connected to an output terminal (V REF ); a current source element (Q N 1) connected between said second node and said ground line; and an impedance element (Q P 5) connected between said output node and said ground line, said constant-voltage generating circuit characterized by further comprising: a first capacitive element (Q N C) connected between said first node and said ground line for increasing capacitance therebetween.
Claim 2
Dependent Claim
72 words
A constant-voltage generating circuit according to claim 1, in which the ratio of (the total capacitance between the first node and the power source line) to (the total capacitance between the first node and the ground line) substantially equals the ratio of (the power source voltage - the absolute value of the threshold voltage of the P-channel MOS transistor) to (the absolute value of the threshold voltage of the P-channel MOS transistor).
Claim 3
Dependent Claim
42 words
A constant-voltage generating circuit according to claim 1, in which said first capacitive element is an N-channel MOS transistor (Q N C) having a gate connected to said first node, and a source and a drain both connected to the ground line.
Claim 4
Dependent Claim
31 words
A constant-voltage generating circuit according to claim 1, further comprising a second capacitive element (Q P C) connected between said first node and said power source line for increasing capacitance therebetween.
Claim 5
Dependent Claim
72 words
A constant-voltage generating circuit according to claim 4, in which the ratio of (the total capacitance between the first node and the power source line) to (the total capacitance between the first node and the ground line) substantially equals the ratio of (the power source voltage - the absolute value of the threshold voltage of the P-channel MOS transistor) to (the absolute value of the threshold voltage of the P-channel MOS transistor).
Claim 6
Dependent Claim
76 words
A constant-voltage generating circuit according to claim 4, in which said first capacitive element is an N-channel MOS transistor (Q N C) having a gate connected to said first node, and a source and a drain both connected to the ground line, and said second capacitive elements is a P-channel MOS transistor (Q P C) having a gate connected to said first node, and a source and a drain both connected to said power source line.
Claim 7
Dependent Claim
18 words
A constant-voltage generating circuit according to claim 1, in which said first capacitive element is a junction capacitor.
Claim 8
Dependent Claim
20 words
A constant-voltage generating circuit according to claim 4, in which said first and second capacitive elements are junction capacitors, respectively.
Claim 9
Dependent Claim
46 words
A constant-voltage generating circuit according to claim 1, in which said current source element is an N-channel MOS transistor (Q N 1) having a gate connected to said power source line, a drain connected to said second node, and a source connected to said ground line.
Claim 10
Dependent Claim
41 words
A constant-voltage generating circuit according to claim 1, in which said impedance element is a P-channel MOS transistor (Q P 5) having a source connected to said output terminal, and a gate and a drain both connected to said ground line.