Phase-shifting lithographic masks with improved resolution
Abstract
Abstract In order to print an isolated feature having a width W in a photoresist layer (101) using an optical radiation imaging system (200) whose lateral magnification is equal to m , a phase-shifting mask is used having a corresponding isolated feature. This corresponding isolated feature has a central portion (C) having a refractive index n₁ and a thickness t₁, and a peripheral portion (B) having a refractive index n₂ and a thickness t₂, such that the phase-shift φ = 2π(n₂t₂ - n₁t₁)/λ of the central portion relative to the peripheral portion is equal to π radian. The width C of the central portion advantageously is selected such that mC/W is equal to at least 1.2, and preferably greater than 1.5, rather than unity.
Inventors
- 👤 Joseph G. Garofalo
- 👤 Robert Louis Kostelak, Jr.
- 👤 Sheila Vaidya
Bibliographic Details
Claims Analysis
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