Patent EP0488307A2 successfully refreshed from Google Patents.
EP0488307A2
Expired / Lapsed
EP
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Plasma etching apparatus
Assignee: Toshiba Corp
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Filing: 1991-11-28
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Granted: —
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Expires: 2011-11-28
Abstract
Abstract A plasma etching apparatus comprising a susceptor (12, 14) for holding a semiconductive wafer, a cooling jacket (20) having a coolant (21) of a large cooling capacity and capable of quickly cooling said susceptor (12, 14) to an intended low temperature, a process chamber (10a) enclosing the susceptor (12, 14) and the cooling jacket (20), a gas discharging mechanism (34, 36) for evacuating the process chamber (10a), an insulating member (16) interposed between the susceptor (12, 14) and the cooling jacket (20), a gas supply device (71, 80) for supplying gas to an O-ring holding groove (51, 53, 55) arranged on the interface regions (59) of the susceptor (12, 14), the insulating member (16) and the cooling section (20) and a pressure control mechanism (70) for controlling the pressure of the supplied gas.
Inventors
- 👤 Toshihisa c/o Intellectual Property Div. Nozawa
- 👤 Junichi c/o Intellectual Property Div. Arami
- 👤 Keiji c/o Intellectual Property Div. Horioka
- 👤 Isahiro C/O Intellectual Property Div. Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:03
CPC Classifications
H; H10; H10P; H10P50/00; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H10P72/70; H10P72/78; H01J2237/00; H01J2237/20; H01J2237/2001; H01J2237/32; H01J2237/33; H01J2237/334
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
162 words
A plasma etching apparatus comprising: a susceptor (12, 14) for holding an object (W) to be etched; a cooling section (20) having a coolant (21) of a large cooling capacity and capable of quickly cooling said susceptor (12, 14) to an intended low temperature; a process chamber (10a) enclosing the susceptor (12, 14) and the cooling section (20); exhausting means (34, 36) for exhausting a gas in the process chamber (10a); intermediate member (16) interposed between the susceptor (12, 14) and the cooling section (20); gas supply means (70, 71, 80) for supplying a heat transfer gas at least one of the interface region (59) between the intermediate member (16) and the susceptor (12, 14), the interface region (59) between the intermediate member (16) and the cooling section (20), and the interface region (59) between each other components of the susceptor (12, 14); and pressure control means for controlling the pressure of the heat transfer gas supplied by said gas supplying means.
Claim 2
Dependent Claim
25 words
A plasma etching apparatus according to claim 1, further comprising heating means (15) embedded in the susceptor (12, 14), for heating said susceptor (12, 14).
Claim 3
Dependent Claim
39 words
A plasma etching apparatus according to claim 2, further comprising temperature detecting means (83) for detecting the temperature of said susceptor (12), thereby controlling to heat the susceptor (12) by said heating means (15) according to the detected temperature.
Claim 4
Dependent Claim
41 words
A plasma etching apparatus according to claim 1, further comprising temperature detecting means (83) for detecting the temperature of said susceptor (12), thereby controlling pressure of the heat transfer gas by said pressure control means (70) according to the detected temperature.
Claim 5
Dependent Claim
43 words
A plasma etching apparatus according to claim 1, further comprising means (70) for supplying gas to the interface region (59) between the object (W) and the susceptor (12, 14), thereby controlling pressure of the heat transfer gas by said pressure control means (70).
Claim 6
Dependent Claim
31 words
A plasma etching apparatus according to claim 1, characterized in that said intermediate member (16) is made of material for electrically insulating said susceptor (12, 14) from said cooling section (20).
Claim 7
Dependent Claim
42 words
A plasma etching apparatus according to claim 1, characterized in that the pressure of the heat transfer gas supplied to the interface region (59) between the intermediate member (16) and the susceptor (12, 14) is controlled by said pressure control means (70).
Claim 8
Dependent Claim
42 words
A plasma etching apparatus according to claim 1, characterized in that the pressure of the heat transfer gas supplied to the interface region (59) between the intermediate member (16) and the cooling section (20) is controlled by said pressure control means (70).
Claim 9
Dependent Claim
41 words
A plasma etching apparatus according to claim 1, characterized in that the pressure of the heat transfer gas supplied to the interface region (59) between each other components of the susceptor (12, 14) is controlled by said pressure control means (70).
Claim 10
Dependent Claim
41 words
A plasma etching apparatus according to claim 2, characterized in that the pressure of the heat transfer gas supplied to the interface region (59) between said heating means (15) and the susceptor (12) is controlled by said pressure control means (70).
Claim 11
Dependent Claim
32 words
A plasma etching apparatus according to claim 1, further comprising means (13) for adjusting the state of contact of each other components of the susceptor (12, 14) in the interface region (59).
Claim 12
Dependent Claim
28 words
A plasma etching apparatus according to claim 1, characterized in that said gas supply region (59) is isolated and sealed against the atmosphere in the process chamber (10a).
Claim 13
Dependent Claim
40 words
A plasma etching apparatus according to claim 1, characterized in that the heat transfer gas is supplied to the interface region (59) of the related members (12, 14, 16, 20) by way of an O-ring holding groove (51, 53, 55).
Claim 14
Dependent Claim
18 words
A plasma etching apparatus according to claim 1, characterized in that said heat transfer gas is inert gas.
References Cited (Backward Citations)
No citation records indexed.
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